Photorefractive p‐i‐n diode quantum well operating at 1.55 μm

ArticleinApplied Physics Letters 68(25):3576 - 3578 · July 1996with7 Reads
Impact Factor: 3.30 · DOI: 10.1063/1.116642 · Source: IEEE Xplore

    Abstract

    We demonstrate the performance of a semiconductor photorefractive p‐i‐n diode operating at 1.55 μm in the longitudinal quantum‐confined Stark geometry. The device structure consists of a semi‐insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p‐n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. © 1996 American Institute of Physics.