Photoluminescence and passivation of silicon nanostructures

Sandia National Laboratories, Albuquerque, New Mexico 87185‐1056
Applied Physics Letters (Impact Factor: 3.3). 12/1994; 65(19):2386 - 2388. DOI: 10.1063/1.113036
Source: IEEE Xplore


A new method was used to fabricate nanometer‐scale structures in Si for photoluminescence studies. Helium ions were implanted to form a dense subsurface layer of small cavities (1–16 nm diameter). Implanted specimens subjected to annealing in a variety of atmospheres yielded no detectable photoluminescence. However, implantation combined with electrochemical anodization produced a substantial blueshift relative to anodization alone. This blueshift is consistent with the quantum confinement model of photoluminescence in porous silicon.

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    ABSTRACT: Silicon wafers implanted with 30 keV He ions at room temperature in a low pressure hydrocarbon atmosphere exhibited visible photoluminescence. The samples were characterized by Raman, infrared, transmission electron microscopy, and heavy ion elastic recoil detection analysis. Two different layers were distinguishable on top of the silicon, with the upper layer comprising mostly amorphous carbon, as confirmed on a similarly implanted Be sample. Green photoluminescence was found to arise from the thinner a‐Si 1-x C x :H interface layer. Such a buried intermixed layer could be incorporated into a stable visible light emitting device based on crystalline silicon. © 1995 American Institute of Physics.
    No preview · Article · Dec 1995 · Journal of Applied Physics
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    ABSTRACT: Visible photoluminescence has been observed at cryogenic temperatures from crystalline Si bombarded with He and exposed to H either as plasma or gas in the 250–450 °C temperature range. The experimental results are consistent with the formation of Si nanoparticles produced by He segregation, which is responsible for exciton localization, and H passivation of the nonradiative recombination centers.
    No preview · Article · Dec 1995 · Applied Physics Letters
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    ABSTRACT: We report the observation of visible and stable room temperature photoluminescence (PL) from thin composite films deposited onto various substrates (Si, SiO2, Al and C) by means of an ion-beam sputtering system. Transmission electron microscopy (TEM) observations of the films deposited on carbon substrates reveal the presence of filamentary structures, with nanometric dimensions, of crystalline silicon embedded in an amorphous matrix. While changes of film composition do not influence the main features of the PL, we found that the PL shape and intensity is strongly dependent on the nature of the substrate. The necessary combination of Si and SiO2 for producing the light-emitting material and the TEM results suggest that quantum confinement of carriers in the silicon nanocrystals is a possible origin of the observed PL.
    No preview · Article · Nov 1996 · Solid State Communications
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