P-type CdS thin films formed by in situ Cu doping in the chemical bath

Photo voltaic Systems Group, Laboratorio de Energia Solar IIM, UNAM, 62580 Temixco, Morelos, Mexico
Applied Physics Letters (Impact Factor: 3.3). 07/1993; 62(23):2956 - 2958. DOI: 10.1063/1.109181
Source: IEEE Xplore


The formation of p‐type CdS thin films, doped with Cu, in a chemical bath, is reported for the first time. The Cu doped films showed amorphous nature and exhibited high electrical conductivity as compared to undoped films, which were near stoichiometric with n‐type conductivity and crystalline in nature. Cu doping influenced the photocurrent response, structural, electrical, and optical properties of the films. The optical band gap of the CdS film varied from 2.35 to 2 eV after Cu doping. The potential application of these films as an absorber layer in thin film solar cells is being investigated.

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