Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition

Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea
Applied Physics Letters (Impact Factor: 3.3). 09/1992; 61(9):1101 - 1103. DOI: 10.1063/1.107681
Source: IEEE Xplore


CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p‐InSb (111) orientation substrates in the growth temperature range between 200 and 280 °C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265 °C posed a significant problem due to interdiffusion from the InSb substrates during the growth.

  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: CdIn2Te4 epitaxial films were grown on p-InSb(1 1 1) orientation substrates by temperature gradient vapor transport deposition via a two-step method. Double crystal X-ray diffraction was used to evaluate the crystallization and the crystal quality of the CdIn2Te4 films. Raman spectroscopy showed several optical phonon modes of the CdIn2Te4 thin films. The stoichiometry of the CdIn2Te4 films was investigated by Auger electron spectroscopy. The results showed that high quality epitaxial films of CdIn2Te4 could be grown on p-InSb(1 1 1) by a simple technique.
    Full-text · Article · Dec 1992 · Solid State Communications
  • [Show abstract] [Hide abstract]
    ABSTRACT: Metalorganic chemical vapor deposition of BaTiO 3 on p‐InSb (111) using Ba(tmhd) 2 , Ti(OC 3 H 7 ) 4 , and N 2 O via pyrolysis at low (∼300 °C) temperature was performed to produce high‐quality BaTiO 3 /p‐InSb (111) interfaces and BaTiO 3 insulator gates with dielectric constants of high magnitude. Raman spectroscopy showed the optical phonon modes of a BaTiO 3 thin film. The stoichiometry of the BaTiO 3 film was investigated by Auger electron spectroscopy. Transmission electron microscopy showed that the BaTiO 3 films had local epitaxial formations. Room‐temperature capacitance‐voltage measurements clearly revealed metal‐insulator‐semiconductor behavior for the samples with the BaTiO 3 insulator gates, and the interface state densities at the BaTiO 3 /p‐InSb interfaces were approximately high 10<sup>11</sup> eV<sup>-1</sup> cm<sup>-2</sup> at the middle of the InSb energy gap. The dielectric constant determined from the capacitance‐voltage measurements was as large as 743. These results indicate that the BaTiO 3 layers grown at low temperature can be used for both high‐density dynamic‐memory and high‐speed applications.
    No preview · Article · May 1993 · Applied Physics Letters
  • [Show abstract] [Hide abstract]
    ABSTRACT: Cd0.936Zn0.064Te/CsTe strained superlattices (SLS) were grown by a simple method of the double-well temperature-gradient vapor deposition on GaAs (1 0 0) orientation substrates, with each well thickness ranging between 100 and 300 Å. X-ray double crystal diffractometry measurements were performed to investigate the structural properties of the superlattices. Photoluminescence measurements showed that the sharp 1h1 intersubband transition peaks were clearly observed on the Cd0.936Zn0.064Te/CdTe SLS and that the excitonic transition energies were shifted to higher energies with decreasing well width. The lowest intersubband transition energies in Cd0.936Zn0.064Te/CdTe SLS with well widths of 200 and 300 Å were determined theoretically by taking into account the strain effects, and the values were in good qualitative agreement with those obtained from the experimental measurements. These results indicate that Cd0.936Zn0.064Te/CdTe SLS have good enough heterointerfaces with the necessary abruptness for the investigation of fundamental physics including optical properties.
    No preview · Article · Oct 1993 · Solid State Communications
Show more