Conference Paper

NEGF analysis of InGaAs Schottky barrier double gate MOSFETs

DOI: 10.1109/IEDM.2008.4796843 Conference: Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Source: IEEE Xplore


A systematic study of InGaAs metallic source/drain Schottky barrier (SB) FET is conducted from a structural and material perspective by comparing it with InGaAs MOSFET and Si SBFET counterparts. The InGaAs SBFET exhibits a superior subthreshold swing compared to its Si counterpart due to its smaller transport mass. The contrary occurs at smaller channel length, demonstrating that InGaAs SBFETs are not as scalable. Since these devices exhibit different subthreshold and transconductance properties, their relative device advantage depends on the operating condition. We demonstrate that there is a window where the ION of an InGaAs SBFET can outperform its InGaAs MOSFET and Si SBFET counterparts.

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    • ") of a thin film of InAs and GaAs followed by subsequent interpolation using Vegard law [11]. The quantization mass m * y is extracted by finding the energy difference of the conduction band minimum between the bulk and the thin film followed by similar interpolation. "
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