Middle-IR Random lasing of Cr:ZnS nanocrystalline powder - from diffusion to photon localization regimes

Conference Paper · June 2008with1 Read
DOI: 10.1109/QELS.2008.4552937 · Source: IEEE Xplore
Conference: Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

    Abstract

    First room temperature mid-IR lasing due to intra-shell transitions in the doped semiconductor nanocrystals (NC) is reported. The 27 nm Cr:ZnS NCs oscillate at 2200 nm with 325 mJ/cm<sup>2</sup> laser threshold. Temperature dependence of photoluminescence decay, lasing threshold and lasing wavelength maxima of Cr:ZnS NCs are studied.