Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process

Conference PaperinDigest of Technical Papers - IEEE International Solid-State Circuits Conference 51:332 - 617 · March 2008with9 Reads
DOI: 10.1109/ISSCC.2008.4523192 · Source: IEEE Xplore
Conference: Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International

    Abstract

    The first front-end CMOS co-integration based on the lateral SGMOSFET presented in this paper demonstrates the benefit of a co-integration approach for NEMS devices. Performance using this device is compared to that obtained with a standalone ASIC. The next step will consist of replacing equivalently the input transistor of the ASIC cascode structure by the SGMOSFET.