Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process
The first front-end CMOS co-integration based on the lateral SGMOSFET presented in this paper demonstrates the benefit of a co-integration approach for NEMS devices. Performance using this device is compared to that obtained with a standalone ASIC. The next step will consist of replacing equivalently the input transistor of the ASIC cascode structure by the SGMOSFET.
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