Conference Paper

IGBT stacks based pulse power generator for PIII&D

Korea Electrotechnol. Res. Inst., Changwon
DOI: 10.1109/PPC.2005.300503 Conference: Pulsed Power Conference, 2005 IEEE
Source: IEEE Xplore


Plasma source ion implantation and deposition (PSII&D) is an emerging technology for surface treatment of metal and polymer materials. Through this technology it is possible to improve surface properties of the materials such as metals, plastics and ceramics. In this study, IGBT stacks based pulse power generator for PSII&D is proposed. The pulse generator uses six IGBT stacks and a step-up pulse transformer to generate high voltage pulse. Twelve IGBTs are connected in series in each IGBT to increase voltage rating of the pulse generator. Each IGBT stack uses a very simple driving method that has only two active drivers and eleven passive drivers (are composed of passive components such as resistors, capacitors, and diodes). Fault detection and fast protection are critical parts of the pulse power generator. The arc generation in the plasma load is common. Due to the arc in the plasma load, short current (overcurrent) condition is often generated. So the overcurrent detection and fast protection is implemented to protect pulse power generator in this paper.

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Available from: Joo-Pil Kim, Nov 22, 2014
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    • "Further , the circuit configuration is complex because an additional configuration of the reset circuit is required to prevent saturation of the transformer. In addition, a parallel configuration is also required because the current stress is increased, while the voltage stress of the energy storage capacitor and semiconductor switch can be reduced using a step-up boost transformer [14]. A Marx-generator-type pulse modulator method using a semiconductor switch (instead of the conventional gas discharge switch in the Marx generator structure) passes a high-voltage pulse to loads by charging a large number of capacitors in parallel , through charging elements such as high-voltage charger and resistors, inductors or diodes, and then reconfiguring them in series with switches. "
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    ABSTRACT: This paper describes the design of a robust high-voltage solid-state pulsed power modulator (SSPPM), which requires reliable series stacking and driving of a number of semiconductor switches. For voltage balancing against overvoltage during both at transient and at steady-state, the power-cell-based modular stacking structure consists of an energy storage capacitor, bypass diode, and switching device (such as an insulated-gate bipolar transistor or a metal-oxide-semiconductor field-effect transistor (mosfet)). In addition to the reliable voltage balancing of each switching device, the modular power cell stacking structure provides a fault-tolerant design by allowing individual protection circuit for each switching device. In this paper, the inclusion of a compensating third winding is proposed. This compensating third winding solves the voltage unbalance issue, which results from difference of leakage inductance of separate located transformer core, using magnetic flux compensation. A protection method using this compensating winding is also suggested to detect abnormal occurrences in each power cell under operating conditions. Additionally, an arc current protection circuit to ensure continuous operation of the SSPPM is designed. Through simulation and experimental results of tests on the SSPPM with the structure outlined earlier, it is verified that the proposed design can be used effectively, as it exhibits both robustness and reliability.
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    ABSTRACT: In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. The proposed scheme consists of series connected 9 power stages to generate maximum 60 kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stage is configured as 8 series connected power cells and each power cell generates up to 850 V DC pulse. Finally pulse output voltage is applied using a total of 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, a full bridge inverter and a pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. The proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency, and flexibility to generate various kinds of pulse output. The operation of proposed pulse power supply was tested for PSII application and is confirmed that the proposed scheme can effectively be used for wide pulse power applications
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    ABSTRACT: In this paper, a novel new pulsed power generator based on IGBT stacks is proposed for pulsed power application which can be used for PSII applications. Because it can generate high voltage pulsed output without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation, high repetition rate and rectangular pulse shape. Proposed scheme consists of multiple power stages which generate maximum 6.8kV, 300A output pulse and one series resonant power inverter to charge DC capacitor voltage. Depending on the number of power stages it can increase maximum voltage up to 60kV without any restriction. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.
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