1.3-μm wavelength InP laterally coupled distributed feedback ridge laser

Conference Paper · March 1997
DOI: 10.1109/OFC.1997.719852 · Source: IEEE Xplore
Conference: Optical Fiber Communication. OFC 97., Conference on

    Abstract

    In this paper, the fabrication and characterization of 1.3-μm
    wavelength GaInAsP-InP laterally coupled DFB ridge laser are presented
    for the first time, to our knowledge. One-step MOCVD (metal organic
    chemical vapor deposition) has been used for the epitaxial growth of the
    laser structure with a separate confinement heterostructure bulk active
    layer