Schottky Diode Series Resistance and Thermal Resistance Extraction From $S$ -Parameter and Temperature Controlled I–V Measurements

IEEE Transactions on Microwave Theory and Techniques (Impact Factor: 2.24). 09/2011; 59(8):2108 - 2116. DOI: 10.1109/TMTT.2011.2146268
Source: IEEE Xplore


A new method for extracting the series resistance and thermal resistance of a Schottky diode is presented. The method avoids the inaccuracies caused by the temperature dependence of the saturation current and ideality factor. These are a major concern for traditional extraction methods, especially when the diode under test has a submicrometer anode diameter and is significantly heated up by the bias current. The method uses theoretical models validated with measurements for the temperature-dependent saturation current and ideality factor, and the series resistance values extracted from low-frequency scattering parameter measurements in the high bias current regime. The main focus of this paper is the accurate extraction of the series resistance. For example, the series resistance value extracted with our method for a discrete diode with a 0.8-μm anode diameter is 88% larger than the series resistance extracted using traditional techniques. As a by-product from the extraction algorithm, an estimate for the thermal resistance of the diode is obtained. The method is validated with extensive current-voltage (I-V) and scattering parameter measurements of two different commercially available discrete single anode mixer diodes optimized for terahertz operation. I-V measurements are performed at several controlled ambient temperatures and scattering parameter measurements at one known ambient temperature.

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    • "These drawbacks are discussed in more detail in Chapter III. A method for extracting the thermal resistance of THz Schottky diodes was developed in [14]. It uses temperature controlled – measurements and -parameter measurements together with analytical equations. "
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    ABSTRACT: This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 $muhbox{m}^{2}$ is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper.
    Full-text · Article · Mar 2014 · IEEE Transactions on Terahertz Science and Technology
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    ABSTRACT: Thermal management has become an important issue in the design of Schottky diode-based circuits for high power applications. This work presents a physics-based numerical electro-thermal model for Schottky diodes capable of evaluating the thermal effects on the electrical performance of devices and circuits. The advantages of this model are the inclusion of temperature-dependent material parameters, the capability to calculate internal temperature distributions, and the identification of regions where heat is generated, providing useful information for device design and circuit reliability. The developed electro-thermal model is integrated into a circuit simulator in order to provide a tool which can be used to analyze, design and optimize Schottky diode-based circuits for high power operation. This tool has been validated with a 200 GHz doubler from the Jet Propulsion Laboratory (JPL-NASA). A better agreement with measurement results at high input powers is obtained with our model compared with other previous models reported in the literature due to the self-consistent implementation of the temperature-dependency of physical parameters like electron mobility and saturation velocity.
    No preview · Article · Mar 2010 · IEEE Transactions on Terahertz Science and Technology
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    ABSTRACT: We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits. The thermal model is developed for an $n$-anode multiplier via a thermal resistance matrix approach. The nonlinear temperature responses of the material are taken into consideration by using a linear temperature-dependent approximation for the thermal resistance. The electro-thermal model is capable of predicting the hot spot temperature, providing useful information for circuit reliability study as well as high power circuit design and optimization. Examples of the circuit analysis incorporating the electro-thermal model for a substrateless- and a membrane-based multiplier circuits, operating up to 200 GHz, are demonstrated. Compared to simulations without thermal model, the simulations with electro-thermal model agree better with the measurement results. For the substrateless multiplier, the error between the simulated and measured peak output power is reduced from ${\sim} {\hbox{13}}\hbox{\%}$ to ${\sim} {\hbox{4}}\hbox{\%}$ by including the thermal effect.
    No preview · Article · May 2012 · IEEE Transactions on Terahertz Science and Technology
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