Crosstalk in deep submicron DRAMs

Conference Paper · January 2000with3 Reads
Source: DBLP
Conference: 8th IEEE International Workshop on Memory Technology, Design, and Testing (MTDT 2000), 7-8 August 2000, San Jose, CA, USA

    Abstract

    This study examines the effect of crosstalk on the operations of DRAMs that are implemented in deep submicron technology, 0.18 µm. An extensive simulation revealed that the coupling between word lines and between bit lines alter the cell contents during reading and writing operations as well as retention of the different cells The effect is more likely when the poly instead of aluminum is used. Coupling between bit and word lines did not have such serious outcome.