Conference Paper

A 3.9ns 8.9mW 4×4 silicon photonic switch hybrid integrated with CMOS driver

DOI: 10.1109/ISSCC.2011.5746293 Conference: IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011
Source: DBLP


The emerging field of silicon photonics targets monolithic integration of optical components in the CMOS process, potentially enabling high bandwidth, high density interconnects with dramatically reduced cost and power dissipation. A broadband photonic switch is a key component of reconfigurable networks which retain data in the optical domain, thus bypassing the latency, bandwidth and power overheads of opto-electronic conversion. Additionally, with WDM channels, multiple data streams can be routed simultaneously using a single optical device. Although many types of discrete silicon photonic switches have been reported, very few of them have been shown to operate with CMOS drivers. Earlier, we have reported two different 2×2 optical switches wirebond packaged with 90nm CMOS drivers. The 2×2 switch reported in is based on a Mach-Zehnder interferometer (MZI), while the one reported in is based on a two-ring resonator.

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Available from: Alexander Rylyakov, Jan 16, 2015
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    • "Si photonics is revolutionizing optical interconnections in terms of cost, power, bandwidth , and scalability (Zimmermann, 2000; Pavesi and Lockwood, 2004; Reed and Knights, 2004; Pavesi and Guillot, 2006; Reed, 2008; Deen and Basu, 2012; Fathpour and Jalali, 2012; Vivien and Pavesi, 2013). III-V (Wale, 2008; Evans et al., 2011) and Sibased platform technologies (Reed and Knights, 2004; Gunn, 2006; Rylyakov et al., 2011; Arakawa et al., 2013; Urino et al., 2013) are competing for the next generation of optical interconnections. The critical missing component for Si photonics is a monolithic light source compatible with the existing infrastructure of complementary-metal-oxide-semiconductor (CMOS) technologies for fabrication. "
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