The generation of broadband squeezed states of light lies at the heart of high-speed continuous-variable quantum information. Traditionally, optical nonlinear interactions have been employed to produce quadrature-squeezed states. However, the harnessing of electrically pumped semiconductor lasers offers distinctive paradigms to achieve enhanced squeezing performance. We present evidence that quantum dot lasers enable the realization of broadband amplitude-squeezed states at room temperature across a wide frequency range, spanning from 3 GHz to 12 GHz. Our findings are corroborated by a comprehensive stochastic simulation in agreement with the experimental data. The evolution of photonics-based quantum information technologies is currently on the brink of initiating a revolutionary transformation in data processing and communication protocols [1, 2]. A cornerstone within this realm will be the quantum emitter. In recent years, there has been a substantial upsurge in both theoretical and experimental investigations centred around semiconductor quantum dot (QD) nanostructures [3]. A particular emphasis has been placed on self-assembled QDs embedded into microcavities, which facilitate the generation of single photons with high purity and indistinguishability [4-6]. As a result, such sources assume a pivotal role in quantum computing [7, 8] as well as the discrete variables (DV) quantum key distribution (QKD) [9]. In stark contrast to the DV QKD, which requires single-photon sources and detectors, continuous variable (CV) QKD leverages lasers and balanced detection to continuously retrieve the light's quadrature components during key distillation. This approach benefits from readily available equipment and seamless integration into existing optical telecommunications networks [10]. One of the CV QKD protocols, GG02 [11], is widely acclaimed for its security due to the no-cloning theorem of coherent states [12]. Nevertheless, a recent study has delved into the use of squeezed states to achieve even higher levels of security and robustness [13]. This innovative approach strives to completely eliminate information leakage to potential eavesdroppers in a pure-loss channel and to minimize it in a symmetric noisy channel. Within this cutting-edge protocol, information can be exclusively encoded through a Gaussian modulation of amplitude-squeezed states, which are commonly referred to as photon-number squeezed states. These states demonstrate reduced fluctuations in photon number ∆n 2 < n with respect to coherent states, albeit encountering enhanced phase fluctuations due to the minimum-uncertainty principle. Over the past years, squeezed states of light have been frequently generated using χ (2) or χ (3) nonlinear interactions via parametric down-conversion and four-wave mixing [14]. A variety of nonlinear materials have been applied in these processes, including LiNbO 3 (PPLN) [15], KTiOPO 4 (PPKTP) [16], silicon [17], atomic vapour [18], disk resonator [19], and Si 3 N 4 [20]. Recent advancements have also facilitated the transition from traditional benchtop instruments to a more compact single-chip design [21-25]. As opposed to that, Y. Yamamoto et al. [26] initially proposed an alternative to produce amplitude-squeezed states directly with off-the-shelf semiconductor lasers using a "quiet" pump, i.e. a constant-current source. A striking peculiarity of semiconductor lasers is their ability to be pumped by injection current supplied via an electrical circuit. Unlike optical pumping, electrical pumping is not inherently a Poisson point process due to the Coulomb interaction and allows for reducing pump noise below the shot-noise level [26]. Notably, this method can take full advantage of the mature fabrication processes in the semiconductor industry, thereby significantly boosting its feasibility. In other words, its efficacy hinges on the improved performance of recently developed semiconductor lasers, characterized by their compact footprint, ultralow intensity noise and narrow frequency linewidth. While subsequent experiments involving various types of laser diodes have gained widespread interest in this domain, including commercial quantum well (QW) lasers [27, 28], vertical-cavity surface-emitting lasers [29], and semiconductor microcavity lasers [30], the observed bandwidth has, until now, remained relatively limited. The broadest achieved bandwidth has reached 1.1 GHz with a QW transverse junction stripe laser operating at a cryogenic temperature of 77 K [31]. This limitation indeed poses strict constraints on the practical implementation of room-temperature conditions and hinders the realization of high-speed quantum communications. While a recent study did anticipate the theoretical potential of producing broadband amplitude-squeezed states in interband cascade lasers [32], it is worth noting that, prior to this Letter, no experimental demonstration of such phenomenon had been presented.