DiCarlo et al. have recently published experimental data on the effects of Ti impurity doping on threshold field ET for the sliding charge-density-wave (CDW) conductor NbSe3 at 77 K. They claim these data show that nonisoelectronic Ti impurities pin the CDW weakly, with a pinning strength 40 times greater than isoelectronic Ta atoms, and that size effects at small thicknesses support their three-dimensional–to–two-dimensional crossover model of weak pinning. Here I criticize their analysis, and offer an alternative interpretation.