Article

Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization

National Renewable Energy Laboratory, گلدن، کلرادو, Colorado, United States
Physical Review Letters (Impact Factor: 7.51). 04/2001; 86(12):2609-12. DOI: 10.1103/PhysRevLett.86.2609
Source: PubMed

ABSTRACT

In contrast to pseudobinary alloys, the relative number of bonds in quaternary alloys cannot be determined uniquely from the composition. Indeed, we do not know if the Ga0.5In0.5As0.5N0.5 alloy should be thought of as InAs+GaN or as InN+GaAs. We study the distribution of bonds using Monte Carlo simulation and find that the number of In-N and Ga-As bonds increases relative to random alloys. This quaternary-unique short range order affects the band structure: we calculate a blueshift of the band gap and predict the emergence of a broadband tail of localized states around the conduction band minimum.

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Available from: Alex Zunger, Aug 12, 2015
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    • "HE OBJECTIVE of this letter is to investigate experimentally channel replacement in high-electron mobility transistor (HEMT) devices by incorporating Sb atoms during channel growth in order to improve the electrical properties of the two-dimensional (2-D) heterostructure. Dilute nitride [1] quaternary compounds In x Ga 1−x As 1−y N y have been intensively studied in the past few years [2], [3]. The InGaAsN/GaAs heterostructures possess the advantages of improving electron confinement at high temperatures due to their high conductionband discontinuity barriers. "
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    ABSTRACT: This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In<sub>0.2</sub>Ga<sub>0.8 </sub>AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance g<sub>m,max</sub> of 227 (180) mS/mm, a drain saturation current density I<sub>DSS</sub> of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency f<sub>T</sub> of 25 (20.6) GHz, and the maximum oscillation frequency f<sub>max</sub> of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2times200 mum<sup>2</sup>
    Full-text · Article · Feb 2007 · IEEE Electron Device Letters
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    • "HE OBJECTIVE of this letter is to investigate experimentally channel replacement in high-electron mobility transistor (HEMT) devices by incorporating Sb atoms during channel growth in order to improve the electrical properties of the two-dimensional (2-D) heterostructure. Dilute nitride [1] quaternary compounds In x Ga 1−x As 1−y N y have been intensively studied in the past few years [2], [3]. The InGaAsN/GaAs heterostructures possess the advantages of improving electron confinement at high temperatures due to their high conductionband discontinuity barriers. "
    [Show abstract] [Hide abstract]
    ABSTRACT: This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In 0.2 Ga 0.8 AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demon-strated the maximum extrinsic transconductance g m,max of 227 (180) mS/mm, a drain saturation current density I DSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency f T of 25 (20.6) GHz, and the maximum oscillation frequency f max of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 µm 2 . Index Terms—Dilute channel, InGaAsSb/GaAs high-electron mobility transistor (HEMT), surfactant.
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    • "-y N y have been intensively studied in the past few years [27] [28] "

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