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CNT/Graphene as Sensors
In the present research, novel next generation, flexible carbon nanotubes (CNTs) and Graphene structures utilized for the channel nanomaterials used in the field effect transistors (FETs). CNTs and Graphene when incorporated for the flexible soft electronic devices improves the conductivity due to high intrinsic carrier mobility for electrons. These flexible and stretchable semiconductors replace conventional silicon-based semiconductor due to high processibility, mechanical strength, flexibility, and low cost in production of the materials. Various methods and strategies incorporated for developing improvised CNT and Graphene based materials such as selection of the gate, dielectric, synthesis, applications, source/drain barrier selection, formation of conducting flexible mechanical layer and sensor utility as flexible electronic devices were discussed. CNTs and Graphene based FETs can be incorporated for flexible, stretchable and highly conducting FETs and to realize the functionalities that could not be achieved using conventional Si based FETs. It is worth mentioning that there are obstacles to improvise the material performance of the CNT and Graphene based stretchable electronics such as reproducibility, easy fabrication methods, reliability, understand the material geometry and their combination process. The experiments carried out to understand the insights of the relationship between CNTs, Graphene as stretchable electronic devices and their fabrication process, conductivity, sensitivity, properties used to improve the materials used in soft electronic devices.