Yunbin He

Yunbin He
Hubei University · Faculty of Materials Science and Engineering

Ph. D

About

224
Publications
25,719
Reads
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5,323
Citations
Citations since 2017
131 Research Items
3697 Citations
20172018201920202021202220230200400600800
20172018201920202021202220230200400600800
20172018201920202021202220230200400600800
20172018201920202021202220230200400600800
Additional affiliations
January 2009 - present
Hubei University
Position
  • Professor
January 2007 - December 2008
Tulane University
Position
  • PostDoc Position
February 2004 - December 2006
Justus-Liebig-Universität Gießen
Position
  • PostDoc Position
Education
November 1999 - June 2003
Justus-Liebig-Universität Gießen
Field of study
  • Solid State Physics

Publications

Publications (224)
Article
Full-text available
Flexible, wearable biosensors have been extensively investigated in recent decades due to their potential applications in portable electronics and human health monitoring. However, low sensitivity and complex fabrication are still great challenges for flexible sensors. Herein, a flexible electrochemical biosensor for glucose was proposed, which was...
Article
Various two-dimensional (2D) materials possess low thermal conductivity owing to the predominant quantum effects, making them promising candidates for high-performance thermoelectric devices. Herein, we proposed two 2D materials, MgAl2Se4 and MgIn2Se4, exhibiting low cleavage energies of 0.20 J·m⁻² and 0.22 J·m⁻², respectively. They are both direct...
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Amino functionalized zirconium-based metal–organic framework (NH2-UiO-66) and zinc-based zeolitic imidazolate framework (ZIF-8) were integrated to develop a core–shell architectured hybrid material (NH2-UiO-66@ZIF-8, NU66@Z8). The morphology and structure evolutions of core–shell NU6@Z8 were investigated by FE-SEM, XRD, FTIR, and XPS. The NU66@Z8 c...
Article
With the rapid development of wearable electronic devices, health monitoring is undergoing a fundamental shift from hospital-centered treatment to patient-centered diagnosis. Solution-gated graphene transistors provide an effective platform for developing high-sensitivity wearable devices due to their unique signal amplification, low energy consump...
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Self-driven solar-blind ultraviolet photodetectors (SBUVPDs) have attracted considerable interest for their superior sensitivity and operation flexibility. Herein, we demonstrate realization of a simple vertical-structured self-driven SBUVPD by pulsed laser deposition of β-Ga2O3 thin film on commercially available fluorine doped tin oxide (FTO) sub...
Article
Two-dimensional (2D) Dion-Jacobson (DJ) perovskites are drawing significant attention in optoelectronic fields because of their enhanced out-of-plane electron coupling and improved structure stability. However, the structural effects of organic cations on the in-plane charge transport properties of 2D DJ lead bromide perovskites have remained less...
Article
Two-dimensional (2D) transition metal carbide Ti3C2Tx is the most widely studied MXene and has shown excellent metal conductivity, high carrier mobility and rich surface functions due to its unique structure and characteristics, which can act as an ideal potential material for electronic devices. Herein, an electrochemical transistor sensor based o...
Article
AgNbO3 based antiferroelectric (AFE) ceramics have large maximum polarization and low remanent polarization, and thus are important candidates for fabricating dielectric capacitors. However, their energy storage performances have been still large difference with those of lead-based AFEs because of their room-temperature ferrielectric (FIE) behavior...
Article
2D materials simultaneously with excellent thermoelectric performance and high photocatalytic activity have attracted considerable attention due to their potential applications in clean renewable energy sources. In this article, we proposed three 2D materials, namely Ag2S, Cu2S and AgCuS, respectively, in which Ag2S and AgCuS are auxetic materials...
Article
Taking advantage of the high-quality p-type epitaxial SnO2:Mg film achieved in our previous study, a p-SnO2:Mg/n-SnO2 homojunction based ultraviolet photodetector was fabricated on a c-sapphire substrate by pulsed laser deposition in this work. The p-SnO2:Mg/n-SnO2 homojunction exhibits a typical diode behavior, with a rectifying ratio approaching...
Article
Thermoelectric materials have attracted much attention in recent years because of their potential application prospects in clean energy and waste heat utilization. In this work, we proposed three novel two-dimensional materials, namely KTlO, RbTlO and CsTlO. Based on the state-of-the-art first principles calculation methods, we found that the monol...
Article
Ferroelectric/polymer based dielectric nanocomposites deliver high power density, but low discharged energy density (Ue) and charge-discharge efficiency (η), which are resulted from high remnant electrical displacement (Dr) of ferroelectric fillers and large dielectric difference between ferroelectrics and polymers, constrain their use in integrate...
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In BiFeO3 (BFO), Bi2O3 (BO) is a known secondary phase, which can appear under certain growth conditions. However, BO is not just an unwanted parasitic phase but can be used to create the super-tetragonal BFO phase in films on substrates, which would otherwise grow in the regular rhombohedral phase (R-phase). The super-tetragonal BFO phase has the...
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Polymer-based dielectric capacitors with excellent elevated-temperature capacitive performances are highly demanded in next-generation electronic power systems. Here, we design an effective and low-cost way to fabricate high-temperature polymer capacitors via adding Al2O3 nanoparticles (NPs) into polyetherimide (PEI) nanocomposites. Benefited from...
Article
As an ultra-wide bandgap semiconductor, gallium oxide (Ga 2 O 3 ) holds great application potential in deep-ultraviolet (DUV) photodetectors. While the performance of photodetectors based on crystalline Ga 2 O 3 thin films grown on hard substrates has been continuously improved, photodetectors based on amorphous Ga 2 O 3 grown on less-stringent sub...
Article
While transition metal oxides (TMO) with two-dimensional (2D) structure have attracted much attention, TMO (group P-6 m2) composed of VIB group elements have rarely been reported. In this work, we propose three kinds of monolayer 2D oxides, namely CrO2, MoO2, and WO2, and have further investigated their stability, elastic, electron, phonon, and the...
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Nitrite is one of the most commonly measured indicators in environmental monitoring due to its detrimental effects on environmental safety and human health. It is vital to develop simple and sensitive nitrite detection strategy. In this study, the solution-gated transistor sensor based on electrochemically reduced graphene oxide (ERGO) as the chann...
Article
Accurate measurement of dopamine (DA) is of great significance for human health monitoring and disease prevention. Herein, two-dimensional Ti3C2Tx MXene with high performance was prepared by layer liquid exfoliation method and used for the modification of gate electrode. The glassy carbon electrode (GCE) modified with Pt/Ti3C2Tx was used as the gat...
Article
The desire for developing ultraviolet optoelectronic devices has prompted extensive studies toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as well as p-type doping is the key toward practical applications of ZnO. As yet, stable and reproducible p-type doping of ZnO remains a formidable challenge. To circumvent p-t...
Article
We synthesized zero-dimensional (0D) lead-free guanidinium bismuth iodide ((Gua) 3 Bi 2 I 9 ) single crystals via an antisolvent-assisted evaporation crystallization method, and exploited their potential X-ray detection merits.
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Methyl parathion (MP), as a typical organophosphorus pesticide, has been widely used in pest control and plant growth regulation. Simultaneously, the problem of pesticide residues also poses a serious threat to the environment and human health. Currently, pesticide residue detection technology still faces great challenges in practical applications...
Article
Self-Powered Ultraviolet Photodetector In article number 2100717, Yinmei Lu, Yunbin He, and co-workers demonstrate achievement of high-performance ZnO/PLZT-based self-powered UV photodetectors. The constructive coupling of the ferroelectric depolarization field in PLZT and built-in electric field at ZnO/PLZT interface with a type-II energy band ali...
Article
Two-dimensional (2D) lead halide perovskites have garnered increasing interest due to their high photoluminescence quantum yields and tunable luminescence characters, making them excellent materials in light-emitting, especially for white-light emission. In contrast to their 3D analogues, they are formed by inserting large organic cations between t...
Article
A novel graphene electrochemical transistor (GECT) sensor based on Au-poly(3,4-ethylenedioxythiophene)/reduced graphene oxide (Au-PEDOT/rGO) nanocomposites functionalized the gate electrode and monolayer graphene as channel was proposed and constructed for the ultra-sensitive detection of acetaminophen (AP). Au-PEDOT/rGO nanocomposites were synthes...
Article
Hybrid bismuth halides perovskites have emerged as promising candidates for X‐ray detection, due to the strong absorptivity of high‐energy X‐ray photons, high resistivity, large carrier diffusion length and low toxicity. However, the mostly investigated hybrid bismuth iodides single crystals are usually opaque and require harsh synthesis process. H...
Article
VO2 thin films are widely studied materials for uncooled infrared detection because of their high temperature coefficient of resistance. In this research, Nb-doped VO2 films were synthesized with the expectation that Nb doping would reduce the metal-insulator-transition temperature via electron doping and strain effects caused by the relatively lar...
Article
Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors for their polarization electric field induced photovoltaic (PV) effect. However, the device performance of currently reported ferroelectric-based self-powered UV detectors remains to be improved. Herein, achievement of high-performa...
Article
In current semiconductor based self‐powered ultraviolet (UV) photodetectors (PDs), because the built‐in electric field only exits in the space‐charge region of p‐n junction or Schottky junction interfaces, the photo‐generated carriers can't be efficiently separated and thus the photoelectric response is low. To solve this issue, in this work, we de...
Article
Full-text available
Codeposition of Pt and Au on Ni wire was performed using a simple treatment of immersing Ni wire in aqueous solutions containing both K2PtCl4 and HAuCl4. For evaluating the electrochemical properties of the thus-prepared electrodes, cyclic voltammograms (CVs) of 1.0 M ethanol in 1.0 M NaOH aqueous solutions were recorded. Compared with Pt- or Au-de...
Article
Ultra-wide bandgap semiconductors with exceptional advantages have potential use in ultrahigh power, ultrahigh frequency devices, and other applications. In this paper, a series of high-quality Nb-doped ZrxSn1−xO2 (Nb:ZrxSn1−xO2) alloy epitaxial films were prepared on c-plane sapphire substrates by pulsed laser deposition. A greater proportion of Z...
Article
To develop and fabricate environmentally friendly dielectric capacitors used in high-temperature environment, in this work, we prepare La³⁺ doped 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 lead-free relaxor ferroelectric ceramics with high and wide phase transition temperature. With the introduction of La³⁺, due to the enhancement of the A- and B- site cation i...
Article
(200) facets preferential oriented Ag nanowires were controllably prepared by a simple modified one-step polyol method, in which Cl ions and polyvinyl pyrrolidone (PVP) were employed as nucleating agent and crystal plane inducer, respectively. The evolution in morphology and structure of Ag nanowires were systematically studied by field emission sc...
Article
In order to enhance the visible-light transmittance while reducing the insulator–metal transition (IMT) temperature, Hf–W co-doping is designed for modification of VO2. We grow high-quality HfxWyV1−x−yO2 (HfWVO2) alloy films on c-plane sapphire substrates by pulsed laser deposition, and test structural, electrical, and optical properties of the fil...
Article
Full-text available
Defects significantly affect the mechanical properties of materials. However, quantitatively correlating the point defects with mechanical property could be a challenge. In this study, we explore the point defect effects on the structure and property of magnetron sputtered TiN nanocrystalline films (synthesized using different negative bias potenti...
Article
Wide bandgap SnO2 usually shows n-type conductivity due to intrinsic defects. Herein, we demonstrate the achievement of p-type conduction in SnO2 with a two-step process, in which 3.3 at. % Mg-doped SnO2 epitaxial films were first grown on c-Al2O3 by pulsed laser deposition and then annealed in an oxygen atmosphere at proper temperature and time. A...
Article
Bandgap engineering of ZnO by alloy formation is of great importance for its application in modern optoelectronic devices. Herein, Mg and S co-substituted quaternary Mg 0.12 Zn 0.88 O 1− y S y (MgZnOS) alloy films with various S content were grown on c -plane sapphire by pulsed laser deposition using a Mg 0.12 Zn 0.88 O 0.18 S 0.82 ceramic target u...
Article
A novel graphene electrochemical transistor (GECT) based on zirconia/reduced graphene oxide (ZrO2/rGO) nanocomposites functionalized gate electrode and graphene as channel was successfully designed and fabricated for highly sensitive detection of methyl parathion (MP). ZrO2/rGO nanocomposites were co-electrodeposited on a glassy carbon electrode co...
Article
Electrical conductivity and interfacial polarization are two crucial factors that affect the electromagnetic absorption (EMA) performance of dielectric semiconductors. In this work, we report an efficient surficial-coating strategy to tune the interfacial polarization and dielectric properties of molybdenum disulfide (MoS2) nanosheets. In this stra...
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A silver-deposited nickel (Ag/Ni) wire electrode was prepared via a galvanic replacement reaction between Ag⁺ and Ni wire in aqueous solution. It was then found that the Ag/Ni wire electrode could be modified with Pt simply by treating it in an aqueous solution of K2PtCl4. Although the deposition of Ag on Ni wire was limited in amount, forming Ag d...
Article
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Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (Edp) on the separation of photo-generated carriers. In...
Article
Traditional self‐powered ultraviolet photodetectors, which are usually designed based on p‐n junction interfacial effects, exhibit low responsivity and specific detectivity because the photogenerated electrons and holes cannot be separated effectively. Unlike wide band‐gap semiconductor materials, ferroelectrics have large remnant polarization and...
Article
Full-text available
Ceramics show brittle nature because of ionic and covalent bondings. However, the need for reliable high-power applications with vibrational displacements under high electric fields and stress loadings demands robust piezoelectric ceramics. In this work, three series of Lead Zirconium Titanate-based piezoelectric ceramics for high-power application...
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Enlightened by the quaternary alloy of BeMgZnO, we attempted the first study of BeCaZnO quaternary alloy in this work. We succeeded in the growth of single-phase BeCaZnO alloy films by pulsed laser deposition, and developed planar photoconductive-type ultraviolet (UV) photodetectors using BeCaZnO as the active layer. The structure, morphology, and...
Article
To develop environment-friendly dielectric capacitors with low working electric field and wide useable temperature, in this work, we fabricate (1-x)Na0.46Bi0.54TiO3- xBaSnO3((1-x)NBT-xBSN) lead-free relaxor ferroelectric ceramics by adding BaSnO3 into Na0.46Bi0.54TiO3 matrix. BSN exhibits slim polarization-electric field (P-E) loops, small remnant...
Article
Full-text available
Nanotube Pulsed laser deposition a b s t r a c t Lead-free (Na 0.5358 K 0.4042 Li 0.06)(Nb 0.893 Sb 0.057 Ta 0.05)O 3 (NKLNST) nanotubes were successfully grown on Pt(111)/Ti/SiO 2 /Si(001) substrates by using pulsed laser deposition (PLD) with home-made ceramic target under relatively high O 2 partial pressures. The as-grown NKLNST nanotubes exhib...
Article
Two-dimensional transition metal dichalcogenide materials are of great interest for the development of semiconductor devices because of their diverse properties. In this paper, we discovered the ground states of WxMo1−xS2 alloys and discussed their electronic structures and phonon properties in detail by the cluster expansion method and the first p...
Article
Full-text available
Inorganic ferroelectric filler/polymer nanocomposites combining large maximum electric displacement (Dmax) of ferroelectric materials with good flexibility and high electric breakdown strength (Eb) of the polymers are regarded as the most promising materials for preparing flexible dielectric capacitors with superior energy storage properties. Besid...
Article
The excessive use of pesticides does great harm to environment and human health, a high performance sensor is urgently needed for the management of pesticides contamination. Herein, a novel graphene electrochemical transistor (GECT) for the detection of methyl parathion (MP) was successfully fabricated for the first time. A single layer of graphene...
Article
In this study, in order to obtain superior energy storage performances over a wide temperature range in lead-free dielectric ceramics, we develop and prepare (1-x) (Na0·50Bi0.50TiO3)-xBaZrO3 ((1-x)NBT-xBZ) relaxor ferroelectric ceramics by introducing BaZrO3 into Na0·50Bi0.50TiO3. BZ possesses small remnant polarization (Pr) and slim polarization-e...
Article
Self-powered ultraviolet photodetectors have attracted considerable interest for their reduced sizes and high portability which makes them possible for application in a hazardous environment. In this work, Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) thin films with a wide bandgap of ∼3.72 eV and large remanent polarization of ∼33.9 μC/cm² were synthesized by...
Article
Two-dimensional (2D) ultrathin oxides are crucial for modern quantum electronic devices. However, the well-controlled growth of 2D oxide materials is highly challenging. In this work, ultrathin single-crystal SnO epitaxial films were achieved on r-sapphire by pulsed laser deposition. The quasi-2D SnO films have thicknesses ranging from 3.4 to 25.4...
Article
In this work, we proposed modification of BiFeO3 (BFO) by Mn and Ca co-doping, and realized the epitaxial growth of Bi0.98Ca0.02Fe0.95Mn0.05O3 (BCFMO) thin films on (100)-oriented SrTiO3 (STO) substrates with a SrRuO3 (SRO) buffer layer via pulsed laser deposition (PLD). A decreased bandgap (Eg=2.41 eV) and enhanced remanent polarization (Pr=92.5 μ...
Article
In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV det...
Article
Full-text available
In our paper(1) the N 1s core level energy as obtained by Al Kα excited X-ray photoelectron spectroscopy (XPS) of boron nitride on Ru(0001) is not correctly reproduced, it is 398.63 ± 0.15 eV and not 389.63 ± 0.15 eV. Table 1 reproduces the B 1s and N 1s binding energies and work functions for h-BN on Rh(111), Ru(0001), Ni(111), and Pd(111).(2)Figu...
Article
Alloying VO2 by Ru incorporation (RuxV1−xO2) should decrease the insulator–metal-transition (IMT) temperature due to the unique semi-metallic properties of RuO2. We deposit high-quality RuxV1−xO2 thin films by pulsed laser deposition on (0001) sapphire substrates. We investigate the structural, electrical, and optical properties of the RuxV1−xO2 al...
Article
We report on the synthesis of Be and Cd co-substituted ZnO (BexCdyZn1−x−yO) quaternary alloy films on c-plane sapphire substrates by pulsed laser deposition. The results show that all deposited films exhibit single-phase wurtzite structure with a surface roughness less than 1.5 nm. By adjusting the O2 pressure during growth, the optical bandgap of...
Article
Although β-Ga2O3 is considered an excellent candidate for solar-blind photodetectors (PDs) owing to its direct bandgap (4.9 eV) and high stability, the cut-off wavelength often oversteps the DUV region, reducing the rejection ratio of the PD. Moreover, oxygen vacancies, which always appear in β-Ga2O3 films, act as trap centers hindering carrier rec...
Article
In order to develop ferroelectric photovoltaic devices with high power conversion efficiency, ferroelectric materials must have simultaneously large remnant polarization and narrow band gap so as to efficiently separate photo-generated carrier and absorb more sunlight. Based on this idea, in this report, we introduce Fe³⁺ into Pb0·93La0·07(Zr0·6Ti0...
Article
Flexible dielectric capacitors have been recently widely studied on account of their fast charge-discharge speed, high power density, and superior wearable characteristics. Inorganic ferroelectric fillers/polymer matrix composites combining large maximum electric displacement (Dmax) of ferroelectric materials with good flexibility and high electric...
Article
Full-text available
Segregation is a crucial phenomenon, which has to be considered in functional material designs. Segregation processes in perovskite oxides have been the subject of ongoing scientific interest, since they can lead to a modification of properties and a loss of functionality. Many studies in oxide thin films have focused on segregation towards the sur...
Article
The modification of titanium (Ti) wire with gold was explored using a simple treatment of Ti wire in aqueous solutions of HAuCl4. Just immersing Ti wire in the solutions of HAuCl4 could not modify Au on Ti, which was confirmed by observing cyclic voltammograms (CVs) of ferrocyanide using the treated Ti wire as a working electrode. However, the addi...
Article
Heterostructures such as heterojunctions, quantum wells, and superlattices are core components of advanced optoelectronic devices. Herein, we attempted the first investigations on the band alignment of nonpolar m-plane oriented ZnO1−xSx/Mg0.4Zn0.6O heterojunctions by X-ray photoelectron spectroscopy. All the heterojunctions were revealed to show a...
Article
Immiscible Cu–Fe composites with various compositions are mechanically alloyed by means of high pressure torsion directly from blended powders and vacuum arc-melted bulk materials respectively, which contain different contents of oxygen. All investigated compositions are deformed to extremely large strains reaching a saturated state consisting only...
Article
Owing to the high sensitivity, solution-gated graphene transistor has emerged as the cutting edge technology in the area of electrochemical sensing. In this work, composites of gold nanoparticles and reduced graphene oxide were synthesized by using the electrodeposition method on a glassy carbon electrode. The modified glassy carbon electrode was u...
Article
Full-text available
A nanocomposite was prepared from gold and graphene oxide via one-step electrodeposition and used to modify the surface of a gold electrode (Au-Gr/GE) that was then applied to non-enzymatic determination of glucose. The effects of deposition time and supporting substrate on the morphology, structure, and electrochemical properties of the nanocompos...
Article
The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (Voc) and large short-circuit current density (Jsc). In order to obtain suitable thickness for the ferroelectric t...
Article
Full-text available
We report on the photovoltaic (PV) effect in nonpolar (10 1¯ 0) orientated ZnO1-xSx (i.e., m-ZnOS) epitaxial thin films. The m-ZnOS films were epitaxially grown on m-sapphire using pulsed laser deposition. Photovoltaic devices were made by evaporating two parallel Au electrodes on the epitaxial m-ZnOS films. The best PV performance was achieved inv...
Article
In this work, to simultaneously obtain a high recoverable energy density (Wre) and efficiency (η) in one kind of material, we investigate the effects of Sn⁴⁺ content on the energy storage capacity of (Pb0.955La0.03)(Zr0.50SnxTi0.50-x)O3 antiferroelectric (AFE) ceramics with a high La³⁺ content. La³⁺ can cause polarization-electric field (P-E) loops...