Yue Min Wan

• Professor
• Professor at I-Shou University

Study on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the Nth electron excited in the central box ∼8.5 × 8.5 × 3 nm3 and the Nth tunnel peak is not in the one-to-one correspondence to suggest that the total number N of electrons is not the best quantum number for chara...

A study of electron transport in nanopillar transistors at 300 K shows that elastic vibration is an intrinsic behavior of the device. The frequency observed in the drain-source current is found to agree with that of the charging pulsed voltages. Given a quantum dot of size 10x10x9 nm³, the maximum displacement is estimated to be 0.3 nm. Once the di...

In this paper, micro interfacial behavior for Sn3.5Ag0.5Cu (SAC305) lead-free solder on Cu-Ni-Au substrate has been carefully investigated. It is observed that the intermetallic compound (IMC) ingredients along the SAC305 solder on the Cu-Ni-Ag substrate are (Ni, Cu)3Sn4 and (Cu, Ni)6Sn5 after reflow process. Reliability analysis for IMC ((Ni, Cu)3...

For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 oC. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffusion-less junction: for easily diffused n-type dopant, phosphorous (P), the ion implantation dop...

An electro-thermo coupling finite element model for lead free Sn4.0Ag0.5Cu (SAC405) solder ball is developed to investigate the electromigration and electro-thermo-mechanical effects on electronic packaging in the present paper. SAC405 alloy solder ball are commonly used on BGA package and POP package. In this research, a single solder ball (bump)...

We reports observation of giant switching currents in nanopillar transistors at 300 K. It is found that these signals represent mechanical vibration due to the interaction of charging electron and the elastic materials of silicon and silicon nitride. Specifically, when an electron is charged to penetrate the SiNx/Si/SiNx multilayer, an electrical f...

We report measurements and numerical modeling of nanopillars transistor in consisting of a multilayer SiN_x/Si/SiN_x structure and an electrical side gate for single-electron tunnel and Coulomb modulation at room temperature. The device has an ultrasmall quantum box of ~ 10 times 10 times 10 nm³ and its manufacture is...

Analysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics involves a few electrons and the numbers (N) specified are periodical at 3, 6, and 12. Quantized currents are obs...

In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λ_F , the authors observe full size beats in current-voltage (I-V) characteristics at 300 K . Analysis based on the theory of electron charging...

A simple method, based on the proximity effect of electron beam lithography, alleviated by exposing various shapes in the pattern of incident electron exposures with various intensities, was applied to fabricate silicon point-contact devices. The drain current (I d) of the device oscillates against gate voltage. The electrical characteristics of th...

A nanoelectronic device consisting of a SiNx/Si/SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼ 10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to de...

We have fabricated ultrathin oxide (thickness) of ∼6 nm gated silicon transistors with a point-contact junction of ∼20 nm thick, and 20 nm wide to explore single electron charging effects near room temperature. Current-voltage (I-V) measurements show clear periodic oscillations and a dramatic collapse of peak's maximum at various temperatures. Anal...

Ultrathin oxide-gated (thickness ∼ 6 nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current–voltage (I–V) measurements show periodic current oscillations near room temperature. Analysis of the energy-level spacing relates the electron char...

We have designed vertical single-electron transistors that consist of a vertical stack of coupled asymmetric quantum wells in a poly-silicon/silicon nitride multilayer nano-pillars configuration with each well having a unique size. A part of surrounding gate arranges source, gate and drain vertically. The gate electrode surrounds half side of a sil...

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (I_d) of the device oscillates against gate voltage. The electrical characteristi...

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current–voltage characteristics at various temperatures from...

We report a study of fabrication Al and Al/Al_2O_3/Al nanoscale structures using electron beam lithography. Aluminum thin film of ~ 50 nm thickness were deposited by reactive sputtering technique from a high-grade Al target onto Si wafers which have covered with ~ 100 nm thick thermal dioxide. Electron-beam direct writing technique (Leica Weprint 2...

We report a multiterminal experiment on BSCCO single crystals in zero magnetic field to study the transport properties from transition to room temperature. In the normal state, analysis of using a linear resistivity model suggests that the system is linear. In transition, current-voltage characteristics of the ab plane, of the c axis, and of the se...

Multiterminal current-voltage measurements have been performed in zero magnetic field to study the transport properties of BSCCO single crystals near the superconducting transition. Linear resistivity model analysis on the IV data at fixed currents shows Ohmic nature above the transition and non-Ohmic below. Below the c-axis transition temperature...

Six-terminal measurements of the resistive transition of Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8[minus][ital y]] crystals in a weak external magnetic field [ital H][parallel][ital c] [ital axis] are analyzed to deduce the magnetic [ital H]-[ital T] phase diagram near the superconducting transition. We find evidence for two magnetic field boundaries, n...

In response to the comment [Phys. Rev. Lett., 72,1569, (1994)] on their original work [Phys. Rev. Lett., 71, 157 (1994)], the authors agree that their recent transition temperature measurement can be interpreted in terms of a fluxon transition as well. (AIP)

We have recently reported six-contact-lead measurements of the zero-field resistive transition of Bi2Sr2CaCu2O8−y single crystals which showed that the secondary voltage, obtained with a “flux-transformer” electrode geometry, exhibited a peak near the transition. To investigate the effects of sample inhomogeneities on this structure, we report here...

Measurements of the zero-field resistive transition of Bi2Sr2CaCu2O8 single crystals suggest that a bulk zero-resistance state develops through a sequential process characterized by two transition temperatures. The upper transition corresponds to Josephson coupling of parallel CuO bilayers, and the lower transition to the conventional Kosterlitz-Th...

Measurements of the zero-field resistive transition of Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8] single crystals suggest that a bulk zero-resistance state develops through a sequential process characterized by two transition temperatures. The upper transition corresponds to Josephson coupling of parallel CuO bilayers, and the lower transition to the co...

Thesis (Ph. D.)--Ohio State University, 1995. Includes bibliographical references (leaves 119-124). Advisor: James C. Garland, Dept. of Physics.