Yu Li

Yu Li
Fudan University · Frontier Institute of Chip and System

About

24
Publications
5,199
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
201
Citations
Introduction
My recent research interests lie in the theoretical & computational studies of magnetic skyrmionic textures, including skyrmion/antiskyrmion switching in chiral magnets, 3D dynamics and the energy landscapes of switching processes, roughness effect on the stability of skyrmionic textures in magnetic multilayers, ferromagnetic resonance, skyrmion-based devices for potential applications.
Additional affiliations
September 2017 - December 2020
The University of Manchester
Position
  • PhD Student
Education
September 2017 - December 2020
The University of Manchester
Field of study
  • Skyrmionics and numerical simulations
September 2013 - June 2017
University of Science and Technology Beijing
Field of study
  • Materials Physics

Publications

Publications (24)
Preprint
Magnetic skyrmions have been in the spotlight since their observation in technologically relevant systems at room temperature. More recently, there has been increasing interest in additional quasiparticles that may exist as stable/metastable spin textures in magnets, such as the skyrmionium and the anti-skyrmionite (i.e., a double-antiskyrmion-skyr...
Article
Full-text available
The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO 2 has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the composition and structure of conductive filaments,...
Article
Magnetic multilayers are promising tunable systems for hosting magnetic skyrmions at/above room temperature. Revealing their intriguing switching mechanisms and associated inherent electrical responses are prerequisites for developing skyrmionic devices. In this Letter, we theoretically demonstrate the annihilation of single skyrmions occurring thr...
Article
Full-text available
Synthetic ferromagnets (SFMs) possess the same layer structure found in the widely studied synthetic antiferromagnets. This consists of two ferromagnetic (FM) layers separated by a nonmagnetic (NM) spacer forming the structure FM1/NM/FM2, but SFMs describe the case where the interlayer exchange coupling promotes the parallel alignment of the magnet...
Preprint
Full-text available
Magnetic multilayers are promising tuneable systems for hosting magnetic skyrmions at/above room temperature. Revealing their intriguing switching mechanisms and associated inherent electrical responses are prerequisites for developing skyrmionic devices. In this work, we theoretically demonstrate the annihilation of single skyrmions occurring thro...
Article
Full-text available
The topological properties of skyrmionic quasiparticles such as magnetic skyrmions and skyrmioniums enable their applications in future low-power, ultradense nanocomputing and neuromorphic systems. We propose here an all-magnetic skyrmionic interconnect, which has so far been the “missing component.” This interconnect will be of relevance to future...
Article
The interfacing of magnetic materials with nonmagnetic heavy metals with a large spin-orbit coupling, such as Pt, results in an asymmetric exchange interaction at the interface due to the Dzyaloshinskii-Moriya interaction (DMI), which in turn leads to the formation of skyrmions and topological spin structures in perpendicularly magnetized multilaye...
Preprint
Full-text available
Magnetic skyrmions have attracted considerable interest, especially after their recent experimental demonstration at room temperature in multilayers. The robustness, nanoscale size and non-volatility of skyrmions have triggered a substantial amount of research on skyrmion-based low-power, ultra-dense nanocomputing and neuromorphic systems such as a...
Article
Full-text available
Magnetic skyrmions have attracted considerable interest, especially after their recent experimental demonstration at room temperature in multilayers. The robustness, nanoscale size, and nonvolatility of skyrmions have triggered a substantial amount of research on skyrmion-based low-power, ultradense nanocomputing and neuromorphic systems such as ar...
Article
Full-text available
Skyrmionic textures are being extensively investigated due to the occurrence of novel topological magnetic phenomena, and their promising applications in a new generation of spintronic devices take advantage of the robust topological stability of their spin structures. The development of practical devices relies on a detailed understanding of how s...
Article
In this work, an improved analytical model for the SET switching statistics of HfO2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles re...
Article
Full-text available
Magnetic phase transitions are a manifestation of competing interactions whose behavior is critically modified by defects and becomes even more complex when topological constraints are involved. In particular, the investigation of skyrmions and skyrmion lattices offers insight into fundamental processes of topological-charge creation and annihilati...
Preprint
Magnetic phase transitions are a test bed for exploring the physics of non-equilibrium phenomena in condensed matter, which become even more complex when topological constraints are involved. In particular, the investigation of skyrmions and skyrmion lattices offers insight into fundamental processes of topological-charge creation and annihilation...
Cover Page
In article number 1604306, Shibing Long, Ming Liu and co-workers, review performance improvements in resistive switching devices. The main focus is on filamentary switching behavior, in the aspects of materials modulation, device structure design and switching operation scheme optimization. In particular, 2D nanomaterials that play active roles and...
Article
Full-text available
In resistive random access memories, modeling conductive filament growing dynamics is important to understand the switching mechanism and variability. In this paper, a universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. Driven by external electric field, the growing process of the nano...
Article
Full-text available
Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in metal-insulator-metal structures. Filamentary switching based on the formation and rupture of nanoscale conductive filament has been applied in non-volatile memory and volatile selector devices wi...
Article
Full-text available
In this letter, the experimental reset voltage and current statistics in a Cu/HfO2/Pt RRAM device are found to deviate from the Weibull model in the high percentiles. A clusteringmodel is developed for the reset statistics based on the cell-based model. The relationship between the parameters (Weibull slope, scale factor, and clustering factor) of...

Network

Cited By

Projects

Projects (3)
Project
Investigations on the skyrmion-based spintronics
Project
Filament-switching of resistive random-access memory (RRAM)