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Publications (10)
The volume-averaged global plasma model has been widely used to analyze the characteristics of plasma, although the spatial variation of plasma parameters cannot be obtained from it. It has also been used to obtain temporal plasma parameters for pulsed plasma sources. In this work, we analyzed the effect of an edge-to-center density ratio (h factor...
Low pressure fluorocarbon plasmas are commonly used in microelectronics
fabrication of plasma etching of dielectric materials. Recently, one of
the critical issues in the etching processes of the nanoscale devices is
to achieve ultrahigh deep contact hole without anomalous behaviors such
as sidewall bowing and twisting profile. To achieve this goal...
Recently, one of the critical issues in the plasma etching processes of
the nanosize devices is to achieve ultra-high deep contact hole without
abnormal behaviors such as sidewall bowing and necking However, it is
well-known that the predictable modeling for this plasma etching process
needs heavy computations due to the inherent complexities of pl...
High aspect ratio ZnO nanorods were grown vertically on ZnO seed layer deposited silicon, glass and polyimide substrates by a solution process at low-temperature using zinc nitrate hexahydrate and hexamethylenetetramine. We studied the effect of polyethlyeneimine (PEI) on the growth of ZnO nanorods. It was found that PEI has a prominent effect on c...
The contribution of advanced nanoscale chemical and biological devices to life science has been limited to a small number of nanomaterials, due to the absence of effective surface modification routes. Herein, we demonstrate a polymer-like nanosheath synthesized by nonthermal plasma technology (NPT) that can protect the core nanomaterial from the so...
Recently, one of the critical issues in the etching processes is to
achieve ultra high deep contact hole without anomalous behaviors such as
sidewall bowing and twisting. To address this issue, we have developed a
3D topography simulator using the level set algorithm based on new
memory saving technique, which is suitable in the contact hole etchin...
Zinc oxide (ZnO)/amorphous carbon (a-C) core−shell nanowires have been prepared by sequential thermal evaporation and plasma deposition processes. The core−shell nanowires are composed of single-crystalline ZnO nanowire cores and uniformly coated a-C shells. This approach enables us to control the thickness of the a-C shell with a resolution in the...
We present a systematic study on the effect of oxygen and hydrogen plasma-generated reactive species on the properties of ZnO nanowires. Upon exposure to oxygen plasma, the electrical conductivity of an individual ZnO nanowire decreased with substantial changes in the surface chemistry, indicating a decrease in the number of donor-like defects and...
The effect of source vapor composition on the growth of ZnO nanostructures inside a microchannel was investigated using a thermal evaporation system. 1D to 2D nanostructures were symmetrically evolved along the longitudinal axis (gas flow direction) of the microchannel. On the basis of the experimental conditions, the changes in the vapor compositi...
ZnO nanowire arrays were fabricated by nanoscale spacer lithography (NSL) and the electrical characterization and gas sensing were carried out to evaluate the performance of the nanowire devices based on the NSL method. Arrays successfully formed without any defects or contamination suggest that the dimensions and positions of the ZnO nanowires can...