Yasir Hashim

Yasir Hashim
Tishk International University · Department of Computer Engineering

Doctor of Engineering

About

66
Publications
31,712
Reads
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238
Citations
Citations since 2017
49 Research Items
223 Citations
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20172018201920202021202220230204060
20172018201920202021202220230204060
20172018201920202021202220230204060
Introduction
Yasir Hashim currently works at the Faculty of Engineering, Tishk International Universiti, Erbil, Iraq. Yasir do research in Electronic Engineering. His most recent publication in Nano-electronics fields
Additional affiliations
August 2009 - July 2013
Universiti Sains Malaysia
Position
  • PhD Student

Publications

Publications (66)
Article
Full-text available
p> This study presents the model, design, and construction of the Arduino based robotic arm, which functions across a distance as it is controlled through a mobile application. A six degree of freedom robotic arm has been designed and implemented for the purpose of this research. The design controlled by the Arduino platform receives orders from th...
Article
This work presents a tail-less fully differential bulk-driven transconductance amplifier without using a common-mode feedback (CMFB) circuit. The proposed amplifier employs two P-type and N-type current mirrors to form two self-biasing positive feedback loops resulting in a double transconductance. The bulk terminals of the P-type current mirrors a...
Article
Full-text available
span>This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (W<sub>F</sub>...
Article
This brief implements a highly efficient fully differential transconductance amplifier, based on several input-to-output paths. Some traditional techniques, such as positive feedback, nonlinear tail current sources, and current mirror-based paths, are combined to increase the transconductance, thus leading to larger dc gain and higher gain bandwidt...
Article
Full-text available
This paper review the FinFET structure as a future transistor for analog and digital electronic circuits, and present its electrical characteristics depending on the important parameters for evaluating the MOSFETs structures like DIBL and Ion/Ioff.
Article
Full-text available
Moore's law principle of minimization of transistors indicates that the number of transistors in integrated circuit (IC) doubles about every two years, but the down scaling of MOSFET towards nano dimensions tends to short channel effects problems, especially the lower ON to OFF current ratio and increasing the DIBL. This happen because of the nano-...
Article
This article presents a low-voltage high-transconductance input differential pair for bulk-driven amplifiers. The proposed structure employs two bulk-driven flipped voltage follower (FVF) cells as nonlinear tail current sources to enhance the slewing behavior. This method also increases the transconductance of the proposed amplifier two times again...
Article
This paper presents an adjustable third-order filter without employing passive elements. The proposed filter combines two low-pass and band-pass MOSFET-only topologies to configure a dual-output structure, while the transconductances and parasitic gate-source capacitances of the transistors act as the required passive elements. The main core of the...
Preprint
Full-text available
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a...
Article
Full-text available
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a re...
Article
Full-text available
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a re...
Conference Paper
Full-text available
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been us...
Conference Paper
Full-text available
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), I ON /I OFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been us...
Conference Paper
Full-text available
Abstract. This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has...
Conference Paper
Full-text available
Abstract. This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has...
Article
Full-text available
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect tran...
Article
Full-text available
This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and c...
Article
Full-text available
Green and clean energy depends meanly on the Solar energy, especially at urban area. This paper presents the Arduino-based new design of dual-axis solar tracking system with high-efficiency using through the use of five-point sunlight sensors. The main objective of this research is to convert the maximum sunlight to electrical power by auto movemen...
Article
Full-text available
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and...
Article
Full-text available
This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs dependin...
Article
Full-text available
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET's designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cutoff frequency of 548 GHz and tran...
Article
Full-text available
In nowadays technology, the primary memory structure widely used in many digital circuit applications is a six transistor (6T) Static Random Access Memory (SRAM) bit cell. The main reason for minimizing memory bit cell to nanodimensions is to provide the SRAM integrated circuits (ICs) with the possible largest memory size per one chip, and the main...
Poster
Full-text available
Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET
Conference Paper
Full-text available
This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working temperature range of this study is from-50 to 150 step-up 25 o C. The final results indicate that...
Article
Full-text available
Walking is a daily activity that requires an appropriate crosswalk as a key part of the provision of safe transportation infrastructure. In this paper, we design and develop a portable smart wireless control system for pedestrian crossing areas to manage the traffic automatically and allow the pedestrian, like school children, to cross the road saf...
Article
Full-text available
This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characte...
Conference Paper
Street lights consume a huge amount of electric energy due to their conventional control systems that automatically turn ON and OFF either using timers or light dependent resistor (LDR). In addition, such systems use a high power pulps, which is not a good option for energy saving, thus it causes a huge waste of energy in the whole world. Green and...
Conference Paper
Full-text available
This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the channel length (Lg). It also studies the possibility of using it as a Nano-temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistor. Current-voltage characteristics with diffe...
Article
Full-text available
This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness-based temperature characteristics is useful to optimized electrical and temperature characteristics of...
Article
Full-text available
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was ut...
Article
Full-text available
This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and tempe...
Article
Full-text available
Among various sensing and monitoring techniques, sensors based on Field Effect Transistors (FETs) have attracted considerable attention from both industry and academia. Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and ability for further downscaling, silicon nanowire field...
Article
Full-text available
Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors' dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (I...
Article
Full-text available
Floods and excessive rainfall are unavoidable phenomena that can cause massive loss of people's lives and destruction of infrastructure. The impact of floods on human lives can be avoided by the Flood Monitoring Systems (FMS). There are many systems used in practice by disaster management agencies for monitoring flood levels. However, most of these...
Article
Full-text available
Abstract The aim of the study was to investigate the feasibility of using irreversible electroporation (EP) as a microbial cell disruption technique to extract intracellular lipid within short time and in an eco‐friendly manner. An EP circuit was designed and fabricated to obtain 4 kV with frequency of 100 Hz of square waves. The yeast cells of Lip...
Article
Full-text available
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the Fi...
Article
This study explores dimensional optimization at different high logic-level voltages for six silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. This study is the first to demonstrate diameter and length of nanowires with different logic voltage level (Vdd) optimizations of nanoscale SiNWT-based SRAM cell. Noise margin...
Conference Paper
This paper represents a channel length ratio optimization at a different high logic level voltage for 6-Silicon Nanowire Transistors (SiNWT) SRAM cell. This study is the first to demonstrate an optimized length ratio of nanowires with different Vdd of nano-scale SiNWT based SRAM cell. Noise margins (NM) and inflection voltage (Vinf) of transfer cha...
Conference Paper
This This paper is to suggest a new model for predicting the static characteristics of nanowire-CMOS (NW-CMOS) inverter. This model depends on experimental (or simulated) output characteristics of load and driver transistors separately as an input data. This model used in this research to investigate the effect of length (L), oxide thickness (Tox)...
Article
This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In t...
Conference Paper
This paper represents diameter and logic voltage level optimizations of 6-Silicon Nanowire Transistors (SiNWT) SRAM. This study is to demonstrate diameter of nanowires effects at a different logic voltage level (Vdd) on the static characteristics of Nano-scale SiNWT Based SRAM Cell. Noise margins (NM) and inflection voltage (Vinf) of transfer chara...
Article
This study is the first to demonstrate characteristics optimization of nanowire resistance load inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on resistance value. Increasing of load resistor tends to increasing in noise margins...
Article
Full-text available
This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimiza...
Article
This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diamete...
Article
Drain-induced barrier lowering (DIBL) is crucial in many applications of silicon nanowire transistors. This paper determined the effect of the dimensions of nanowires on DIBL. The MuGFET simulation tool was used to investigate the characteristics of the transistors. The transfer characteristics of transistors with different dimensions were simulate...
Conference Paper
This paper represents the temperature characteristics of silicon nanowire transistor of rectangular cross-section, temperature effect on transfer characteristics, ION/1oFF ratio and sub-threshuld swing was studied. OMEN nanowire simulation tool was used to investigate temperature characteristics of transistor with three types of orientations. The f...
Article
This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, I(ON)/I(OFF) ratio, drain-induced barrier lowering (DIBL), and sub-threshold swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characterist...
Article
This paper shows the effect of the dimensions of nanowires on threshold voltage, ON/OFF current ratio, and sub-threshold slope. These parameters are critical factors of the characteristics of silicon nanowire transistors. The MuGFET simulation tool was used to investigate the characteristics of a transistor. Current-voltage characteristics with dif...
Article
This paper presents the temperature characteristics of a silicon nanowire transistor and its use as a temperature sensor. The OMEN nanowire simulation tool was used to investigate the temperature characteristics of the transistor. Current–voltage characteristics with different values of temperature for three orientations were simulated. The metal–o...
Article
This paper highlights an effort to study the characteristics of silicon CMOS nanowire transistor and the effect of cross-sectional area of PMOS transistor on silicon nanowire-CMOS inverter characteristics. In this study generated MATLAB code is used together with NanoHub MuGFET simulation tool to produce the characteristics of silicon nanowire tran...
Article
A mathematical model for the calculation of the output characteristics of amorphous silicon hydrogenated (a-Si:H) ion-sensitive field-effect transistors (ISFET) is developed, which depends on the integration of the conductivity channel versus gate voltage curve at fixed drain voltage. Single curve integration was changed to integration with many si...
Article
The characteristics of nanowire (NW) inverters with three types of circuit configurations were simulated and studied. The MuGFET simulation tool was used to produce the output characteristics of N- and P-channel NW transistors. The model presented in the present study utilized these output characteristics of NW transistors as input to the MATLAB pr...
Conference Paper
This paper represents the temperature effect on silicon nanowire transistor and the possibility of using it as a temperature nanosensor. MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistors. Current-voltage characteristics with different values of temperature were simulated. Variation of sub thresho...
Article
This paper is to study the characteristics of nanowire-CMOS and effect of increasing of numbers of nanowires in transistors on the nanowire-CMOS characteristics. This study used MuGFET simulation tool to produce the characteristics of nanowire transistors and used as input to MATLAB software to produce the characteristics of nanowire-CMOS. Increasi...

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Projects (5)