Yashar Azizian

University of Mohaghegh Ardabili | UMA · Department of Physics

In this work, Artificial Neural Network (ANN) algorithm is used to predict the current conduction mechanisms into the metal-semiconductor (MS) and metal-nanocomposite-semiconductor (MPS) structures along with their primary electronic parameters, such as the leak current (I0), potential barrier height (ΦB0), ideality factor (n), series/shunt resista...

This work uses the Support Vector Machine (SVM) to predict the main electronic variables of metal‐semiconductor (MS) and metal‐nanocomposite‐semiconductor (MPS) configurations, i.e., leak current (I0), the height of the potential barrier (ΦB0), ideality coefficient (n), series/shunt resistances (Rs/Rsh), rectification ratio (RR), and surface/interf...

The control of dielectric permittivity and conductivity is a crucial factor in the development of certain electronic components. Materials based on layered structures and polyvinyl alcohol (PVA) show great potential for applications in supercapacitors. Therefore, the creation of polymer composites based on layered semiconductors and the determinati...

In the present study, both metal/semiconductor (MS) and metal/polymer/semiconductor (MPS) Schottky Diodes (SDs) were grown onto the same n-Si wafer to compare their electrical and optical characteristics. Firstly, ZnO and CeO2 nanostructures were synthesized by ultrasonic-assisted method (UAM), and structurally characterized by utilizing x-ray diff...

This study employs two Machine Learning (ML) models to predict the electronic current and then analyze the main electronic variables of Schottky diodes (SDs), including leak current (I0), potential barrier height (ΦB0), ideality factor (n), series resistance (Rs), shunt resistance (Rsh), rectifying ratio (RR), and interface states density (Nss). Th...

This study used a modified polyol technique to synthesize silver nanowires (AgNWs), which were subsequently mixed with polyvinyl alcohol (PVA) polymer and air-dried under ambient conditions. As a result, AgNWs/PVA nanocomposites with a concentration of 2% were prepared by a casting process. After that, the upper surface of the produced samples was...

SiO2 surfactant insulator into Al/n-Si metal-semiconductor (MS) structure was fabricated into Al/SiO2-surfactant/n-Si metal–insulator–semiconductor (MIS) structure and its effect on the electrical properties of the final structure was investigated. The SiO2-surfactant layer is coated on the n-Si wafer by the spin coating technique. The I-V data is...

In this paper, the electrochemical etching process is used for surface modification of the p-Si wafer, named as porous silicon (PS), in the metal–semiconductor (MS) type Schottky diode (SD) with a structure of Al/p-Si. Five regions of PS wafer with different etching rates are selected for comparison of them which are called P2, P3, P4, and P5 (P1 i...

In this study, frequency-dependent physical parameters, voltage-dependent of surface traps/states, and their lifetime of the Au/(ZnCdS-GO:PVP)/n-Si (MPS) type structures were investigated by using conductance measurements ( Y = 1/ Z = G + j ωC ) both in wide range frequency (3 kHz-3 MHz) and voltage (from − 4.00 V to 1.50 V). Firstly, basic physica...

This work aims to study the photo-response of the fabricated silicon-based Al/PVP:ZnTiO3/p-Si photodiode (PD) in a wide range of illumination intensities. To make a metal-polymer/nanocomposite-semiconductor (MPS) PD, a thin film of PVP:ZnTiO3 nanocomposite is deposited at the interface of the metal-semiconductor (MS) structure. Information regardin...

In this research, the optical properties of the PVP: ZnTiO3 nanocomposite are studied using the spectroscopic ellipsometry technique. The preparation procedure of the ZnTiO3 nanocomposite is explained in detail. The absorbance/transmittance, surface morphology, structural information, chemical identification, and surface topography of the ZnTiO3 na...

In this study, composite materials composed of graphene oxide (GO) synthesized by a modified Hummers' method and silver nanowires (AgNWs) synthesized by a modified polyol method were prepared. The prepared composites were subjected to sulfidation under the influence of H2S gas. Structural changes in the samples were evaluated using X-ray diffractio...

Periodontitis gradually damages the hard and soft tissues surrounding the tooth, leading to tooth loss. In recent years, the use of biomaterials in periodontitis treatment has expanded, including gels, nanoparticles, microparticles, fibers, and membranes. Among these, membranes have more clinical applications. Due to the ability of the piezoelectri...

In this study, both the Au/(ZnCdS:GO(1:1) doped PVP)/n-Si and Au/(ZnCdS:GO(1:0.5) doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were fabricated onto the same n-Si wafer to determine effect of the rates of them using the I–V and C/G-V measurements. The basic electrical-parameters of them such as reverse-saturation curr...

In this research, for some different Schottky type structures with and without a nanocomposite interfacial layer, the current–voltage (I–V) characteristics have been investigated by using different Machine Learning (ML) algorithms to predict and analyze the structures’ principal electric parameters such as leakage current (I0), barrier height (ϕB0)...

This study reports a comparative characterization of Au/n-Si Schottky diodes/contacts (SDs) with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which outperforms conventional metal-semiconductor Schottky diode structures. This characterization is important because these structures outperform traditional metal-semiconducto...

Based on the density functional theory (DFT) calculations, the structural, electronic, optical and thermoelectric properties of the MnFeTe Heuslerene compound have been investigated. The total energy change curve in terms of volume refers to the ground state point and equilibrium volume. By applying mBJ approximation, this compound has perfect half...

In this paper, a polyvinyl pyrrolidine (PVP) polymer layer is inserted between the metal-semiconductor (MS) structure to manufacture a metal-polymer-semiconductor (MPS) structure or Schottky diode (SD). The zinc titanate and graphene nanostructures were doped into the PVP layer individually and together to improve the electrical performance of the...

In this research, Au-PVC-Si (MPS1), Au-(CeO2: PVC)-Si (MPS2) Schottky barrier diodes (SBDs) have been grown on n-type silicon (n-Si) with the aim of investigating the frequency dependence and the effect of polymer interlayer on dielectric parameters such as complex dielectric constant (ε = ɛ′ − iɛ″), ac-conductivity (σac), and complex electric-modu...

In this paper, the cerium-oxide nanostructures (CeO2) were synthesized by using the hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2:PVC)-Si (MPS2) SBDs were fabricated to investigate organic interlayer effects on the main electrical properties and conduction-mechanisms (CMs). The structural/optical properties of the CeO2 na...

To increase the performance of the metal–semiconductor (MS) structure, MS and pure polyvinyl-pyrrolidine (PVP), Gr, (ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed on the p-Si substrate in same conditions and impedance-measurements of them were performed in frequency range of 100 Hz–1 MHz at 1.5 V. These results show that the real/imagina...

In this paper, using finite difference method, the effect of adding a p-layer at the back of a metal-semiconductor-metal (MSM) photodetector (PD) on the spatial electric charge distribution and the transient response of the device is numerically studied. To this aim, the fundamental equations of the semiconductor device, i.e., two current continuit...

The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under definite illuminations. The values of saturation c...

This paper introduces a new approach to the self-healing quantification of structured light beams‎. ‎The self-healing is quantitatively determined by defining a self-healing degree (SHD) and a similarity function based on comparing the intensity distributions of the perturbed and unperturbed beams‎. ‎In addition‎, ‎the SHD is employed for two other...

In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance-voltage (G/ω-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on temperature. Also, usin...

The aim of this work is to examine the influence of the type and concentration of an electrolyte solution on the optical characteristics of CdS nanoparticles produced by the sonochemical approach. The optical characteristics of the samples were examined using an Ultraviolet–Visible (UV–Vis) spectrophotometer in order to calculate the bandgap value....

In this work, both the Al-(p-Si) (MS) and Al-(Al2O3:PVP)-(p-Si) (MPS) structures were grown onto the same p-type Si wafer in the same conditions to determine the (Al2O3:PVP) organic-interlayer whether the MPS build improves performance or not. For this aim, firstly, X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) wa...

In this study, the electrical properties of Au/(SnS doped PVC)/n-Si structures were investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by 20K steps). Some of the basic electrical parameters such as ideality factor (n), saturation current (I0), and barrier height (bo) were obtained. When these parameters were...

To determine the impact of pure and (PVC:SnS) interlayers on the electrophysical features of Schottky barrier diodes (SBDs), Au/n-Si, Au/PVC/n-Si, and Au/(PVC: SnS)/n-Si structures are created on the same n-Si wafer. The average crystalline size, surface-morphology, purity-characterization, and optical features of the prepared SnS-nanostructure are...

In this work a binary photocatalyst of rGO and MnFe2O4 was prepared completely using one-pot hydrothermal simple method. In this way, in a reaction vessel, graphene oxide was reduced and at the same time, MnFe2O4 nanoparticles were formed on its surface. The obtained catalyst was characterized by N2 adsorption, FT-IR, XPS, HRTEM, XRD, FESEM and VSM...

Both Au-(n-Si) (MS) structures with & without PVC and (Sm2O3-PVC) interlayer (MPS) has been performed onto n type Si wafer to compare dielectric and electric-modulus properties of them between 200 Hz and 1 MHz at 1.5 V bias voltage. Experimental results show that both the real and imaginary parts of complex-dielectric (ε′, ε′′) for 1.5 V show quite...

Photoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the resul...

In this paper, an organic interlayer, R s , and N ss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters of them have been investigated. The interface-traps/states ( D it / N ss ) were extracted from the I F -V F data...

In this paper, we report a simple ultrasound-assisted method for the preparation of CdS nanostructures to utilize as an interfacial layer for fabrication of Al/CdS-PVP/p-Si structure. The comparison of C-f and I–V characterizations on both Al/p-Si (MS) and Al/CdS-PVP/p-Si (MPS) Schottky structures have been analyzed and reported. For the fabricatio...

In this research work, by using biocompatible minerals as an additive, the electrical response of the structure was measured, and its convenience in passivating Nss was examined. The I-V and C(G)-V-f measurements were executed with wide range voltages (from −3 V to +4 V (0.05 V steps)) and frequencies (from 2 kHz to 2 MHz) at room temperature. When...

In this research, the dielectric characteristics of fabricated Al/(ZnFe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> -PVA)/p-Si structures have been investigated in wide range frequency a...

The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm2O3) polymer interlayers on the electrical characteristics in detail. The fabricated reference sample Au/n-Si, Au/PVC/n-Si, and Au/(PVC: Sm2O3)/n-Si were named as Metal-Semiconductor (MS), Metal-Polymer-Semiconductor (MPS1), and MPS2 structure, respectively. The pro...

The effect of 60Co-irradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs has been investigated using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifyi...

The effect of light Ni-substituted Manganese on the physical properties of La0.2Sr0.8MnO3 perovskite prepared by the standard solid-state reaction method was investigated. Field Emission Scanning Electron microscopy confirms the particle size composition and grain boundaries in these samples. Moreover, the presence of all the chemical elements with...

To determine the influence of the thin polymer interface film on the electrical and dielectric characteristics of the Al/p-Si MS structure, the Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP film was deposited on the silicon substrate using the spin-coating method. The mean size of these nanostructures was found less than 50 nm using the XRD method. EDX p...

In this paper, (Co–TeO2) nanostructures were synthesized using the microwave-assisted method for the fabrication of (PVP:Co–TeO2) as an organic interlayer (OI) at Al/p-Si interface. Structural and optical properties of nanostructures were investigated through XRD, SEM, EDX, and UV–Vis techniques. The interface states (Nss) energy dependence diagram...

In this paper, the polyvinyl pyrrolidine (PVP) polymer layer doped by barium titanate (BaTiO3) nanostructures has been prepared as an interfacial layer to fabricate a metal-semiconductor-metal (MPS) diode. The inserted layer in the metal-semiconductor (MS) structure can be changed its dielectric properties which have been studied in this work. In a...

In this paper, the influence of doping barium titanate in the polyvinyl pyrrolidine polymer sandwiched between the metal-semiconductor on the conduction mechanism and the electrical properties of the formed diode has been examined. The barium titanate nanostructure is prepared by the microwave-assisted method. The TGD/DTA, X-ray diffraction pattern...

The values of complex-dielectric (ε* = ε′ − jε″), loss-tangent (tanδ), complex-electric modulus (M* = M′ + jM″), and ac electrical-conductivity (σac) of the performed Au/(NiS:PVP)/n-Si structures were extracted from the measured impedance-spectroscopy method (ISM) in frequency range of 10 kHz–1 MHz and voltage ((− 2 V)–(+ 3 V)). These parameters, w...

Photoresponse characteristics of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were investigated using current–voltage (I–V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode has a good response to the illumination. Especially, in reverse bias region, photocurrent (Iph) increases with i...

A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features, for example, diffusion-potential (VD), doping density of donor-atoms (ND), Fermi-energy (EF), barrier-height (ΦB), and depletion layer-width (WD) were extrac...

In this work, the quaternary nanostructure La0.8−xCexAg0.2MnO3 perovskite was synthetized by conventional solid-state method and calcination in air at 900 °C for 24 h. These materials are one member of perovskite-containing manganite, and rare earths and Alkali elements in A and B sites, respectively. The effect of La substitution on the crystallit...

To investigate the effect of interaction between polyvinyl alcohol (PVA) and iron ions (Fe2+ and Fe+3) in an aqua reaction medium on the structural and magnetic properties of magnetite nanoparticles, four different co-precipitation processes have been considered. In each process, PVA interacted with one of the cations or both of them for a designat...

Cobalt ferrite (CoFe2O4) nanostructures in powder form were synthesized by an ultrasound assisted method. The crystalline structure of it was determined by XRD method. The prepared powder was mixed with an aqueous polyvinylpyrrolidone (PVP) solution to utilize as an interfacial thin film. The prepared CoFe2O4-PVP solution was deposited on the n-Si...

Mechanical, electronic, and thermoelectric properties of the RhTiZ (Z = As, Sb) compounds and their [111] thin films have been calculated based on the DFT framework. The RhTiZ (Z = As, Sb) bulk structures have stability in the mechanical and thermodynamic viewpoints, with 1.1 eV and 0.98 eV energy gaps, respectively. Their thermoelectric behaviors...

A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features for example diffusion-potential (V D ), doping density of donor-atoms (N D ), Fermi-energy (E F ), barrier-height (Φ B ), and depletion layer-width (W D ) were...

This study was conducted to improve the photocatalytic performance of TiO2 in the visible light range using TiO2 based nanostructures. For this purpose, TiO2 nanostructures were prepared by using the microwave-assisted technique and then used to prepare barium titanate (BaTiO3), bismuth titanate (Bi4Ti3O12), and zinc titanate (ZnTiO3) nanostructure...

The consequences of applying (Nanographite-PVP) interlayer on surface-states (Nss), series-resistance (Rs), and polarization effects on the real and imaginary parts of the complex dielectric constant (ε* = ε′-jε″), loss-tangent {tanδ(= ε″/ε′)}, electrical-conductivity (σ), and complex electric-modulus (M* = M′ + jM″) have been investigated in wide...

In this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced and the radiation effects on their electrical properties were investigated using the current-voltage (I-V) measurements. The I-V measurements were performed before irradiation and after various irradiation doses in the wide voltage range (±4 V) at room temperature. To d...

Photo-response properties of the Au/(CoFe 2 O 4 -PVP)/n-Si (MPS) diode were investigated using current-voltage (I-V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode has a good response to the illumination. Especially, in reverse-bias region, photocurrent (I ph ) increases with...