Yaroslav Ya. Kudryk

• PhD
• Senior Researcher at National Academy of Sciences of Ukraine

In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of IMPATT diode with a sharp p-n junction on Si has been considered, and functions of the ohmic contacts have been shown. Physical and technical requirements for contacts have been formulated as based on their functional pur...

The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method, the Au–Ge–TiB2–Au contact to n-n+-GaAs was used. T...

The emission uniformity of LED chips in the entire range of brightness and colors is the problem in LED displays manufacture process. It was approved that at lowering brightness gradations appearing the radiation nonuniformity between LED chips, and the higher disorders will be seen on the lesser emission levels. The RGB LED chips, observed by us,...

Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip series resistance. Separation of LED chips with different series resistance before assembling may increase the time of emission in a...

Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n+-InP and Au–Ti–Ge–Pd-n+-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n+-n-n++-n+++-I...

Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n+-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n+-n-n++-n+++-InP structure. The specific contact resistance measured at room temperature was about 7∙10–5 Ohm∙cm2. Voltage-current characteristics within the temperature range 11...

We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au-TiB2-n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor a...

It is experimentally found that an ohmic contact based on Au-Pt-Ti-Pd-n +-Si metallization is formed due to nanoscale metal shunts containing Si, Au, and Pt in the region of the interface with n +-Si, which appears during heat treatment at T = 450°C for 10 min in a vacuum chamber with a residual pressure of 10−6 Torr. The high density of shunts adj...

The temperature dependences of the contact resistance ρc (T) of ohmic Pd-Ti-Pd-Au contacts to n-GaN and n-AlN wide-gap semiconductors with a high dislocation density are studied. The dependences ρc (T) for both contacts contain portions of exponential decrease ρc (T) and very weak dependence ρc (T) at higher temperatures. Furthermore, a plateau por...

Anomalous temperature dependences of the specific contact resistance ρc (T) of Pd2Si–Ti–Au ohmic contacts to lapped n�Si with dopant concentrations of 5 ×1016, 3 ×1017, and 8 ×1017cm–3 have been obtained. The anomalous dependences of ρc (T) have been accounted for underthe assumption that the current flows along nano-dimensional metallic shunts, wh...

We studied Au-Pd-Ti-Pd ohmic contacts made by thermal evaporation of metals in vacuum onto n-GaN (n-AlN) with high dislocation density heated to a temperature of 350 °�. Temperature dependence of ohmic contacts resistivity may be described by the mechanism of current flow through the metal shunts associated with dislocations, with allowance made fo...

We studied Au-Pd-Ti-Pd ohmic contacts made by thermal evaporation of metals in vacuum onto n -GaN (n -AlN) with high dislocation density heated to a temperature of 350 °C. Temperature dependence of ohmic contacts resistivity may be described by the mechanism of current flow through the metal shunts associated with dislocations, with allowance made...

We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd –Si -n ohmic contact at 450 С for 10 min in a vacuum of ~10 Pa-4. These defects lead to appearance of metal shunts that determine the cur...

Measuring data for the parameters of a microstrip switching superhigh-frequency integrated circuit on a 100 μm thick polycrystalline diamond film are reported. Measurements are taken in the frequency range 3–7 GHz. It is shown that the decay in developmental modulators is no greater than 1.5 dB in the on state and no less than 29 dB in the off stat...

We present a method for measurement of p-n junction temperature as well as static and pulse thermal resistance in IMPATT diodes. The method is tested using 8 mm-wave IMPATT diodes with an integrated heat sink made at the State Enterprise Research Institute “Orion” (Kyiv).

We studied temperature dependences of resistivity, , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with high dislocation density. Both curves have portions of exponential decrease, as well as those with very slight dependence at higher temperatures. Besides, the Au-Pd-Ti-Pd-n-GaN contacts have a portion of flattening out...

Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is analysed using the modified rate equation model that takes into account the current crowding effect at different temperatures. The results of calculations are consistent with t...

The temperature dependence of contact resistivity qc in lapped silicon specimens with donor concentrations of 5*1016, 3*1017, and 8*1017 cm-3 was studied experimentally. We found that, after decreasing part of the qc(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the fo...

The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-emitting diodes (LEDs) operating in the middle-infrared (mid-IR) range (λ = 3−5 μm) has been studied. Calculations based on a modified model of recombination coefficients show that current crowding leads to a significant decrease in the IQE of LEDs, which i...

A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is dete...

Temperature dependences of the contact resistivity ρc of Au-TiBx -Ge-Au-n-n +-n ++(GaAs)-InP ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that ρc can decrease after microwave treatment in the entire temperature range of ρc measurements (100–400 K). Good ag...

Based on a theoretical analysis of the temperature dependence of the contact resistance R c for an Au-Ti-Pd2Si-n +-Si ohmic contact, a current-transfer mechanism explaining the experimentally observed increase in R c in the temperature range 100–380 K is proposed. It is shown that microwave treatment of such contacts results in a decrease in the sp...

A new mechanism describing the rise in the contact resistance ρc of ohmic contacts to n-n +-n ++-GaAs(GaP, GaN, InP) structures with increasing measurement temperature T, experimentally observed in the temperature range 100–400 K, is suggested on the basis of a theoretical analysis of the temperature dependence of ρc . Good agreement between the ex...

We studied temperature dependences of resistivity ρc(T) of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with high dislocation density. The obtained dependences cannot be explained by the existing mechanisms of current flow. We propose possible mechanisms explaining the experimental ρc(T) curves for ohmic contacts to n-GaN a...

Using contacts to silicon carbide as an example, a method of ohmic contact characterization from heat stability and contact resistance is proposed. The method is based on the known empirical dependences of (i) contact resistivity on the semiconductor doping level and (ii) ohmic contact degradation on time and temperature.

Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determinin...

Монография охватывает базовые физические методы диагностики в микроэлектронике: методы рентгеновской дифракционной диагностики полупроводниковых материалов и структур для СБИС и ряда дискретных полупроводниковых приборов, а также полупроводниковых структур с квантовыми точками, квантовыми ямами и сверхрешетками; методы электронной микроскопии, Оже-...

We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical model of internal quantum efficiency calculation is presented that takes into account nonuniform lateral carrier injection in the active region. Based on this model, we exam...

We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance form...

The thermal limits of the two-drift impact avalanche and transit-time (IMPATT) diode operating in the pulsed mode in the 8-mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that p-n junction overheat at an operating pulse length of 300 ns and a supply current amplitude of 11.3–15 A amounts to 270–430°C...

The thermal limits of the two�drift impact avalanche and transit�time (IMPATT) diode operating in the pulsed mode in the 8�mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that p–njunction overheat at an operating pulse length of 300 ns and a supply current amplitude of 11.3–15 A amounts to 270–430°C r...

Based on a theoretical analysis of temperature dependence of contact resistance RC for Au-Ti-Pd2Si-n+-Si oh-mic contact, a current flow mechanism is proposed that explains the experimentally observed RC growth with temperature in the 100-380 K temperature range. It is shown that microwave treatment of such contacts leads to reduction of RC values s...

We propose multilayer ohmic contacts to n-and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with circular contact geometry. The Ti−Al−TiB x −Au contact metallization to n-GaN retains its layer structure after thermal annealing at...

The radiation resistance of Au–Pd–Ti–Pd–n++InP ohmic contacts and Au–TiBx–n-n+-n++InP barrier contacts—both initial and subjected to a rapid thermal annealing and irradiated with 60Co γ-ray photons with doses as high as 10 9 R—has been studied. Before and after external effects, the electrical characteristics of the barrier and ohmic contacts, dist...

The estimation of thermal limitations for pulse operation mode in the 8 mm-wave band of double-drift impact avalanche and transit-time (IMPATT) diodes with microwave power ≥20 W. It is shown that at pulse duration of 300 ns and amplitude of 11.3-15 A; overheating of p-n junction is 270-430°C. The boundary value of temperature of p-n junction at whi...

The temperature dependences of the contact resistivity ρ{sub c} of Au-TiBâ Al-Ti-n{sup +}-n-n{sup +}-GaN-AlâOâ ohmic contacts have been studied before and after microwave treatment followed by nine-nonth room-temperature sample storage. The temperature dependences of ρ{sub c} of initial samples were measured twice. The first measurement showed th...

The radiation resistance of Au-Pd-Ti-Pd-n ++-InP ohmic contacts and Au-TiBx-n-n +-n++-InP barrier contacts—both initial and subjected to a rapid thermal annealing and irradiated with 60Co γ-ray photons with doses as high as 109 R—has been studied. Before and after external effects, the electrical characteristics of the barrier and ohmic contacts, d...

It is researched temperature dependences of forward branch of Shottkey diodes TiB x -n-6HSiC. It is detected that forward branch of voltage-current characteristic is described by exponential dependence for voltage interval of 0.05-0.4 V and temperature interval of 100-500 K. At that saturation current and characteristic energy are weakly dependent...

We consider the features of formation of AuTiPd ohmic contacts to p + -Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed...

Au–TiBx–AuGe–n-GaP ohmic contacts have been investigated before and after rapid thermal annealing at T = 723, 773, and 873 K for 60 s in a hydrogen atmosphere. It is shown that the contact resistivity decreases with an increase in temperature in the range 77–232 K due to the thermionic nature of current flow in inhomogeneous ohmic contacts, while i...

The effect of rapid thermal annealing on the structural and physical properties of Au-(Ti, Zr)B x-GaN(SiC) contacts and diode structures on their basis is investigated. The X-ray-diffraction investigations and the layer-by-layer Auger analysis showed that the phase composition and structure of the GaN and SiC contacts are retained to the temperatur...

Mechanism of charge transport in a diode of a silicon carbide’s Schottky barrier formed by a quasi-amorphous interstitial phase TiB x on the surface of n-6H-SiC (0001) single crystals with an uncompensated donor (nitrogen) concentration of ∼1018 cm−3 and dislocation density of ∼(106–108) cm−2 has been studied. It is demonstrated that, at temperatur...

Radiation effects in the Au-Ti-Al-Ti-n-GaN multilayer metallization subjected to irradiation with 60Co γ-ray photons in the dose range 4 × 106−2 × 107 Gy are considered, and the effect of radiation on the initial contact structures and the structures subjected to a rapid thermal annealing (RTA) at high-temperature in the nitrogen atmosphere is stud...

The radiation and thermal stability of the Schottky-barrier structures deposited by the magnetron sputtering of zirconium diboride onto the (0001) face of the Lely-grown n-6H(15R)SiC single crystals with the uncompensated-donor concentration of ∼1018 cm−3 was investigated by the methods of the I–V and C–V characteristics combined with the layer-by-...

Au-TiBx -AuGe-n-GaP ohmic contacts have been investigated before and after rapid thermal annealing at T = 723, 773, and 873 K for 60 s in a hydrogen atmosphere. It is shown that the contact resistivity decreases with an increase in temperature in the range 77–232 K due to the thermionic nature of current flow in inhomogeneous ohmic contacts, while...

We studied the heat resistance of Au-TiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °C (100...

Temperature coefficient of breakdown voltage (TCBV) in the Au-Ti-n-n+-6H SiC diodes with Schottky barrier is investigated. It is shown that TCBV is negative in the (300...573) K temperature range. This seems to be caused by the effect of deep levels in the space-charge region of a diode on the breakdown.

We studied the effect of microwave irradiation (frequency of 2.45 GHz, irradiance of ~1.5 W/cm2) for 2-100 s on the characteristics of Au-TiBx-Al-Ti-n-GaN contact structures. A correlation between the contact resistivity changes and wafer curvature was found. This indicates considerable effect of intrinsic stresses on contact resistivity. Relative...

Structural and electrical properties of Au-TiBx -nn +n ++-InP and TiBx -nn +n ++-InP multilayer barrier structures on standard (“rigid”) and soft (“porous”)n ++-InP substrates have been studied, with the semiconductor layers deposited by vapor-phase epitaxy, metallic layers formed by magnetron sputtering, and porous substrates fabricated by electro...

A mechanism of charge transport in Au-TiBx -n-GaN Schottky diodes with a space charge region considerably exceeding the de Broglie wavelength in GaN is studied. Analysis of temperature dependences of current-voltage (I–V) characteristics of forward-biased Schottky barriers showed that, in the temperature range 80–380 K, the charge transport is perf...

The effect of rapid thermal annealing on the parameters of TiB x -n-GaP Schottky barriers and interphase interactions at the TiB x -GaP interface are studied. It is shown that the contact TiB x -n-GaP system features an increased thermal stability without varying the electrical parameters of the Schottky barrier at temperatures as high as 600°C.

We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al2O3 Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V curves of forward-biased Schottky barriers showed that, in the temperature range 80−380K, the current flow occurs a...

High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiB x layers are suggested and studied. We have performed the structural and morphological investigations along with studies of Auger concentration depth profiles in the contacts both before and after rapid thermal annealing. It is found that...

We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al2O3 Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V curves of forward-biased Schottky barriers showed that, in the temperature range 80−380 K, the current flow occurs...

We consider a silicon carbide thermistor with multilayer Au–TiB x –Ni 2 Si ohmic contacts intended for operation in the 77 to 450 K temperature range.

We studied phase composition and parameters of the ohmic Au-TiB _x-Al-Ti-n-GaN and barrier Au-TiB_x-n-GaN contacts, both before and after rapid thermal annealing (RTA) at T=870degC for 30 s. The phase composition was studied with X-ray diffraction technique, while the parameters of the ohmic contacts were studied for the transmi...

We developed (i) a technology to form Au-Ge-TiBx-Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n+ -n++ epitaxial structures made on the standard and porous n++-InP substrates, (ii) batch-fabrication technique for mesas with gold heat sink, and (iii) technique for diode chip packaging in a metal-quartz package. It is shown that...

A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (with the frequency higher than 100 GHz) based on GaAs, InP, and Si. It became possible to increase the reliability of the GaAs-and InP-base...

We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change...

A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n + -InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiB x interstitial phases, is proposed. We demonstrate the advantages of TiB x −n-n + -n ++ -InP Schottky-barrier diodes made on porous substrates over those made on...

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwav...

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 4. P. 65-71. The n + -n-n + -n ++ -GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n ++ -GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and...

The results of investigation of a new system of metallization for nonrectifying contacts on n-GaN are presented. The new contact metallization system involves the following sequence of layers: Au(200 nm)-Ti(TiBx)(100 nm)-Al(20 nm)-Ti(50 nm), where the TiBx layer plays the role of a diffusion barrier. The contacts with the TiBx layer retain their la...

We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially prepared porous n⁺-InP and n⁺-GaAs substrates. The structural properties of epitaxial layers and output parameters of the Gunn diodes made on their basis were studied. The...

Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-Al x Ga 1-x As– p-GaAs–n-GaAs–n + -GaAs heteroepitaxial structures grown on smooth or microrelief n + -GaAs substrates using the standard liquid phase epitaxy (LPE) and the capillary LPE from a confined volume, a...

In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti -Al - TiBx - Au and TiBx contact systems. The n-GaN epitaxial layers of 1 μm thickness were grown on [0001] sapphire substrate by va...

Nonrectifying contacts made on the basis of Au (180 nm)-Ge (30 nm)-TiBx (100 nm)-Au (200 nm) system on flat and microrelief n-GaAs (100) surfaces (Nd-Na ≈ 1-2 × 1017 cm-3) were investigated. It was found that both the distribution of contact resistivity ρc and its limiting values depend on contact diameter d in the range of d = 60-400 μm. It was sh...

We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC contacts. The results obtained show that pulse thermal treatment is an efficient technique for local change of parameters of heteroge...

Au/Ge/TiB_x/Au ohmic contacts to n-GaAs with textured surface have been developed and investigated. Two types of microrelief morphology (quasi-grating and dendrite-like), that are perspective for Solar Cell and sensor application, have been obtained by wet chemical anisotropic etching. The surface morphology and structural perfection were...

Electrical and structural properties of Schottky-barrier diodes formed with TiB_x and ZrB_x amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiB_x(ZrB<sub...

We studied, over a vide (77-400 K) temperature range, I-V curves of photoelectric converter (solar cell) prototypes made on the basis of the p-AlxGai1-xAs-p-GaAs-n-GaAs-n+-GaAs heteroepitaxial structures grown on smooth or microrelief n+-GoAs substrates using the standard liquid phase epitaxy (LPE) and the capillary LPE from confined volume. At tem...

The results of experimental studies of interphase interactions in TiBx-n-GaAs (GaP, InP, 6H-SiC) contacts stimulated by external effects are described. These effects are rapid thermal annealing at temperatures as high as 1000degreesC, microwave treatment at f = 2.5 GHz, and Co-60 gamma radiation in the range of doses 10(5)-10(7) rad. Possible therm...

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of e...

The Au-TiBx(Ti)-Al-Ti-n-GaN ohmic contacts and Au-ZrBx-n-6H-SiC barrier contacts were studied before and after rapid thermal annealing at T=700 and 800°C. We measured the component concentration depth profiles and electrical characteristics of the contact systems. It was shown that TiBx buffer layers are promising for application in ohmic contacts...

Effect of a rapid thermal treatment with incoherent IR radiation, spark-erosion and electron-beam treatments on electrical parameters and interface morphology of metal/silicon carbide (21R and 6H polytypes) contacts have been investigated experimentally. The results obtained show that the pulse thermal treatment is an efficient technique for parame...

We studied I-V curves of Au-TiB x -n-n + -GaAs and Au-TiB x -n-SiC 6Í surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm 2 , duration of 0–500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration....

The effect of rapid thermal treatment at T=1000°C on the formation of \textTiBx - n-\textSiC6H(00\text1-- ){\text{TiB}}_x - n--{\text{SiC6H(00}}\mathop {\text{1}}\limits^-- ) barrier contacts and Ni-n-SiC6H(0001) ohmic contacts was studied. In the former case, thermal treatment neither disturbs the layer structure nor reduces the thermal stabilit...

The parameters of planar diodes with Au-ZrBx-n-n+4HSiC Schottky barrier have been studied both before and after rapid thermal annealing (RTA) at T=1000°C. A possibility to produce high-voltage diode structures that remain serviceable after the RTA at T=1000°C is demonstrated.

We present a universal automated complex for control and diagnostics. It is in-tended to measure static, pulse and capacitance-voltage characteristics of two-and three-terminal networks, both at room temperature and in 77–1000 K temperature range. A distin-guishing feature of complex construction is the possibility for simulation of interrelation b...

We present the results of our investigations of morphological and electrical characteristics of TiB_x(ZrB_x)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000°C for 90 s. The TiB_x (ZrB_x) films were obtained using magnetron spu...

We present the results of our investigations of morphological and electrical characteristics of TiBx(ZrBx)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000°C for 90 s. The TiBx (ZrBx) films were obtained using magnetron sputtering from pressed targets of stoichiometr...

We present electrical parameters and characteristics of microwave detecting Au-TiB_x(ZrB_x)-n-SiC 6H diodes. The possibility of using these diodes as power sensors for application in a wide power range (including power up to 1 W) was studied. It is shown that heat-resistant Schottky-barrier diodes (fabricated using magnetron spu...

A procedure of mm-and submm-wave devices simulation based on the up-to-date simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on IMPATT diodes and frequency multipliers with frequency output of 280 GHz as well as detector sections with Schottky barrier diodes fo...