Yann-Michel Niquet

Yann-Michel Niquet
Atomic Energy and Alternative Energies Commission | CEA · Interdisciplinary Research Institute of Grenoble (IRIG)

PhD
Semiconductor spin qubits. I am hiring a postdoc on the modeling of Si/Ge qubits ! Contact me for further informations.

About

258
Publications
38,639
Reads
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6,407
Citations
Introduction
My area of expertise is the modeling of the structural and electronic properties of materials and nanostructures, from ab initio to semi-empirical methods. I am doing research on the atomistic modeling of the electronic, optical and transport properties of semiconductor nanostructures, and on the simulation of ultimate devices [transistors and quantum bits (qubits)]. I am also coordinating the development of the TB_Sim code, a simulation platform for nanosciences and nanotechnologies.
Additional affiliations
December 2003 - September 2020
Atomic Energy and Alternative Energies Commission
Position
  • Researcher
Description
  • Modeling of the electronic, optical and transport properties of semiconductor nanostructures.
October 2001 - November 2003
Université Catholique de Louvain - UCLouvain
Position
  • PostDoc Position
Description
  • Density functional theory - Implementation and assessment of approximations for the exchange and correlation based on many-body perturbation theory.
October 1998 - October 2001
CNRS/IEMN
Position
  • PhD
Description
  • Modeling of the transport properties of semiconductor nanostructures.
Education
November 2013 - November 2013
October 1998 - October 2001
Université de Lille
Field of study
  • Materials Sciences
September 1996 - June 1997
Université Paris-Sud 11
Field of study
  • Solid State Physics

Publications

Publications (258)
Article
Full-text available
We discuss the binding energy E_b of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of E_b from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails in the calculation of E_b from the KS hamiltonian...
Article
Full-text available
We discuss carrier mobilities in the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a method for the extraction of the mobility that is free from contact resistance contamination and with minimal needs for ensemble averages. We focus on silicon thin films as an illustration, although the method can be applied to various ma...
Article
Full-text available
We compute the contact resistances Rc in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that Rc represents a significant part of the total resistance of devices with sub-30 nm gate...
Article
Full-text available
We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting Delta. Thanks to spin-orbit coupling, the qubit can be continuously switched between a spin mode (where the quantum information is encoded into the spin) and a valley mode (w...
Article
Full-text available
Holes confined in semiconductor nanostructures realize qubits where the quantum-mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits. We study an idealization of a cmos device where the hole is strongly confined in one direction (th...
Article
Full-text available
Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin–orbit qubit consisti...
Article
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced...
Preprint
Full-text available
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here,...
Preprint
Full-text available
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We prob...
Article
Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are cr...
Preprint
Full-text available
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate st...
Preprint
Full-text available
We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the...
Article
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300-mm complementary metal oxide semiconductor (CMOS) fabrication technology that is already widely used in the semiconductor industry, while maintaining high readout and gate fidelities. We demonstrate the detect...
Article
Full-text available
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout, or process inhomogeneities indeed shape the real-space wave functions, and hence the spin properties. It is, therefore, necessary to understand how reproducible the qubits can be, i...
Preprint
Full-text available
Efficient and cost-effective Si-compatible lasers are a long standing-wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds can provide compelling solutions, even if the integration is complex and therefore costly. Where low costs and also high integration density are crucia...
Preprint
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting...
Conference Paper
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration...
Conference Paper
Si spin qubits are very promising to enable large scale quantum computing as they are fast, of high quality and small. However, they are still lagging behind in terms of number of qubits. Indeed there are material and integration challenges to be tackled before fully expressing their potential.
Article
Full-text available
High tensile strained Ge cavities in crossbeam are promising for the development of integrated laser sources on Si. However, the optimization of such cavities remains more challenging than the uniaxial beams. Indeed, the spatial distributions of both the optical field and the material gain have to be simultaneously defined by the nuances of complex...
Article
Full-text available
Coulomb interactions strongly influence the spectrum and the wave functions of a few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotr...
Preprint
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental obser...
Preprint
Full-text available
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-se...
Article
Full-text available
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In view of this, spectrosco...
Article
Full-text available
Electron spins are amongst the most coherent solid-state systems known. However, to be used in devices for quantum sensing and information processing applications, they must typically be placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to reali...
Preprint
Full-text available
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced,...
Preprint
Full-text available
Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotrop...
Preprint
Full-text available
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in or...
Article
Full-text available
Starting from the numerical solution of the 6-band k·p description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole, and...
Article
Full-text available
Silicon spin qubits are promising candidates for realizing large-scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly occupied gate-defined quantum dot, fabricated using CMOS-compatible p...
Preprint
Full-text available
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to reali...
Preprint
Full-text available
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectrosc...
Preprint
Full-text available
Gate-controlled silicon quantum devices are currently moving from academic proof-of-principle studies to industrial fabrication, while increasing their complexity from single- or double-dot devices to larger arrays. We perform gate-based high-frequency reflectometry measurements on a 2x2 array of silicon quantum dots fabricated entirely using 300 m...
Preprint
Full-text available
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of such qubits. We study an idealization of a CMOS device where the hole is strongly confined in one direction (th...
Article
Full-text available
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in situ using gate-based dispersive sensing. In systems...
Conference Paper
Lasing in the Mid-Infrared region at 3.98 µm is achieved upon 2.15 µm continuous wave excitation in undoped germanium microbridge strained at 6.1 % at low temperature, revealing a closed offset between the G and L valleys.
Article
Full-text available
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward a large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenges lies in the detection of charges within the array. It is a prerequisite to...
Article
Full-text available
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore, fundamental limits to the relaxation time of the qubits. Here we introduce a general...
Preprint
Full-text available
Starting from the numerical solution of the k.p description of a mismatched ellipsoidal quantum dot in a nanowire, including a spin Zeeman effect with values of the exchange field appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the built-in strain and of the heavy hole, light hole and exciton states. W...
Preprint
Full-text available
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible p...
Preprint
Full-text available
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite fun...
Preprint
Full-text available
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore fundamental limits to the relaxation time of the qubits. Here we introduce a general...
Preprint
Full-text available
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noi...
Preprint
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
Preprint
Full-text available
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot...
Preprint
Full-text available
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit...
Preprint
Full-text available
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show...
Preprint
Full-text available
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems...
Conference Paper
Full-text available
We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.
Article
Full-text available
Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned by strain or alloying with Sn to become direct, as it was found to be required for interband semiconductor lasers. Here, we report lasing in the mid-infrared region (from λ...
Article
Full-text available
We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from t...
Article
Full-text available
A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si3N4...
Preprint
Full-text available
We analyze a prototypical particle-in-a-box model for a hole spin qubit. This box is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupl...