
Yang Shen- Bachelor of Engineering
- Ph.D student at Tsinghua University
Yang Shen
- Bachelor of Engineering
- Ph.D student at Tsinghua University
Ph.D candidate in School of Aerospace Engineering, Tsinghua University.
About
18
Publications
2,959
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154
Citations
Introduction
Thermal transport in electronic devices; Electro-thermal simluation; Monte Carlo simulation; Thermal management
Current institution
Additional affiliations
July 2020 - September 2020
July 2019 - September 2019
Education
September 2017 - June 2021
Publications
Publications (18)
In regenerative cooling systems, aviation kerosene is often used as coolant to absorb heat from the engines. For srcamjet applications, the pressure in cooling channels is often above the critical pressure of most aviation kerosene. Under such states, thermophysical properties of aviation kerosene are significantly different from those under normal...
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is studied by combining the technology computer-aided design (TCAD) and phonon Monte Carlo (MC) simulations. The simulation results indicate that the bias-dependent heat generation in the channel can have a remarkable impact on the thermal spreading pr...
We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With microscopic phonon-based electrother-mal simulations, we scrutinize both the temperature profiles and electrothermal co...
The self-heating effect in electronic devices can lead to localized hotspots, adversely affecting their performance and reliability, particularly in high-power-density devices like gallium nitride (GaN) high-electron-mobility transistors (HEMTs). In addition to enhancing heat dissipation, reducing heat generation through structural design can effec...
Self-heating effects in Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) can adversely impact both device reliability and electrical performance. Despite this, a holistic understanding of the relationship among heat transport mechanisms, device reliability, and degradation of electrical performance has yet to be established. This Le...
Hotspots in electronic devices can cause overheating and reduce performance. Enhancing the thermal spreading ability is critical for reducing device temperature to improve the reliability. However, as devices shrink, phonon ballistic effects can increase thermal resistance, making conventional optimization methods less effective. This paper present...
Accurate thermal simulation is essential for the near-junction thermal management and electro-thermal co-design of GaN HEMTs. While various methods have been employed to simulate phonon thermal transport in GaN, a comprehensive evaluation of their performance and reliability has yet to be conducted. In this work, first-principle-based steady-state...
To develop effective thermal management strategies for GaN transistors, it is essential to accurately predict the device junction temperature. Since the width of the heat generation in the devices is comparable to phonon mean free paths of GaN, phonon ballistic transport exists and can significantly affect the heat transport process, which necessit...
Exact assessment of self-heating is of great importance to the thermal management of electronic devices, especially when completely considering the cross-scale heat conduction process. The existing simulation methods are either based on convectional Fourier's law or limited to small system sizes, making it difficult to deal with non-continuum therm...
To develop efficient thermal management strategies for wide-bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this article, we use the phonon Monte Carlo (MC) method with the phonon dispersion of several typical WBG s...
为准确预测RP-3航空煤油在超临界压力下的热物性,本文在四组分模型的基础上,分别基于遗传算法(GA)和人工神经网络(ANN),提出了两种构建航空煤油替代模型的方法,并对比了两种方法在预测不同热物性上的性能。关注的热物性包括密度、粘度、定压比热容以及热导率。结果表明对于密度和粘度,两种方法均能得到高精度的替代模型;对于定压比热容,GA构建的模型精度更高,而ANN构建的模型表现反而变差;对于热导率,但由于缺乏跨临界区的实验数据,GA可以通过约束适应度函数使模型仍能准确预测伪临界温度,而ANN的灵活性则较差。
Exact assessment of thermal spreading resistance is of great importance to the thermal management of electronic devices, especially when completely considering the heat conduction process from the nanoscale heat source to the macroscopic scale heat sink. The existing simulation methods are either based on convectional Fourier's law or limited to sm...
To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this paper, we used the phonon Monte Carlo (MC) method with the phonon dispersion of various typical WBG se...
Due to the complexity of the chemical compositions in aviation kerosene, simplified surrogate models have gained significant attention to effectively reproduce the thermophysical properties of aviation kerosene. The available surrogate models usually adopt uniform representative compositions with a fixed ratio. However, given that aviation kerosene...