Xin Liang Tan

Xin Liang Tan
Forschungszentrum Jülich · Peter Grünberg Institute (PGI)

Master of Science

About

8
Publications
944
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35
Citations
Citations since 2017
7 Research Items
33 Citations
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201720182019202020212022202301234567
201720182019202020212022202301234567
201720182019202020212022202301234567

Publications

Publications (8)
Article
Full-text available
Fermi surfaces of transition metals, which describe all thermodynamical and transport quantities of solids, often fail to be modeled by one-electron mean-field theory due to strong correlations among the valence electrons. In addition, relativistic spin-orbit coupling pronounced in heavier elements lifts the degeneracy of the energy bands and furth...
Article
Materials with unique quantum characteristics–quantum materials—have become of great importance for information technology. Among others, their unique transport phenomena are in many cases closely connected to details of the electronic structure. Exploring the electronic states and the interplay of the interactions in this material class down to th...
Article
Spin-polarized electrons confined in low-dimensional structures are of high interest for spintronics applications. Here, we investigate the electronic structure of an ordered array of Bi monomer and dimer chains on the Ag(110) surface. By means of spin-resolved photoemission spectroscopy, we find Rashba-Bychkov split bands crossing the Fermi level...
Preprint
Full-text available
Topological semimetals have recently attracted great attention due to prospective applications governed by their peculiar Fermi surfaces. Weyl semimetals host chiral fermions that manifest as pairs of non-degenerate massless Weyl points in their electronic structure, giving rise to novel macroscopic quantum phenomena such as the chiral anomaly, an...
Article
The resistance modulation under various gate voltage (Vg) application conditions was systematically studied for a chemical field effect transistor (FET) composed of a SmNiO3 (SNO) film channel and an ionic liquid gate insulator. The channel resistance of the SNO chemical FET changed nonlinearly over a wide range for different temperatures, Vg magni...
Article
Full-text available
In this study, (111) silicon substrates were exposed to varied trimethylaluminum predoses and ammonia using metalorganic chemical vapor deposition and the resulting deposits were examined using AFM, SEM, TEM, STEM, EDXS, and XPS. Growth patches were observed with facets in the both the vertical and lateral directions. The width of these patches inc...

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