Weiyi Ting

• Medical Doctor at Taipei Medical University

The electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambients (O2 and NH3) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown, and interface hardness in oxynitride films have been characterized as a funct...

Ultrathin stacked SiO2/Si3N4/SiO2 films have been fabricated successfully using in-situ multi-step rapid thermal processing chemical vapor deposition (RTP-CVD). Stacked Si3N4/SiO2 (NO) layers were deposited first by RTP-CVD. Some samples were further rapid-thermal oxidized after stacked layer deposition to form oxide/nitride/oxide (ONO) stacked lay...

Ultrathin metal-oxide-semiconductor (MOS) gate dielectrics have been fabricated by conventional thermal oxidation of Si in pure N2O ambient. Electrical results show that gate dielectrics prepared by this method exhibit comparable fixed charge density compared to control SiO2, but significantly reduced interface state generation and charge trapping...

MOSFETs and MOS capacitors with ultrathin (65 AA) low-pressure chemical vapor deposition (LPCVD) gate SiO/sub 2/ have been fabricated and compared to those with thermal SiO/sub 2/ of identical thickness. Results show that the devices with LPCVD SiO/sub 2/ have higher transconductance and current drivability, better channel hot-carrier immunity, low...

Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for MOS gate dielectric application is presented. N/sub 2/O-nitrided thermal SiO/sub 2/ shows much tighter distribution in time-dependent dielectric breakdown (TDDB) characteristics than thermal oxide. MOSFETs with gate dielectric prepared by this method show improved initial perfo...

The performance and reliability of p-channel MOSFETs utilizing ultrathin ( approximately 62 AA) gate dielectrics grown in pure N/sub 2/O ambient are reported. Unlike (reoxidized) NH/sub 3/-nitrided oxide devices, p-MOSFETs with N/sub 2/O-grown oxides show improved performance in both linear and saturation regions compared to control devices with ga...

The authors report the application of rapid thermal processing (RTP) to the fabrication of ultrathin (~10 nm) high-quality fluorinated oxides in O₂+NF₃ (100 ppm diluted in N₂). NF₃ was used as the F source gas and was introduced either prior to rapid thermal oxidation (RTO) or with O₂ during t...

Charge trapping and interface state generation in ultrathin (58‐Å equivalent oxide thickness) stacked Si 3 N 4 /SiO 2 (NO) films prepared by rapid thermal processing have been studied. Results show that the charge trapping characteristics of stacked films is comparable to those of pure SiO 2 , but interface state generation, especially under positi...

The composition of ultrathin oxides grown on both [100] and [111]Si substrates in pure N 2 O in a conventional furnace has been studied using Auger electron spectroscopy (AES) analysis, chemical etching, and electrical measurements. Results show a peak nitrogen concentration at the Si‐SiO 2 interface which decreases from the Si‐SiO 2 interface to t...

MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control oxides grown in O/sub 2/, N/sub 2/O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In addition, both charge to breakdown and time to breakd...

In this letter, the electrical properties of thin low‐pressure chemical vapor deposited (LPCVD) SiO 2 annealed in N 2 O ambient have been studied and compared with thermal oxide of identical thickness. It is shown that N 2 O‐annealed CVD oxide exhibits less interface state generation and less flatband voltage shift under constant current stress tha...

Growth kinetics of ultrathin SiO 2 films formed by rapid thermal oxidizing Si substrates in N 2 O has been studied in this communication. Results show that the linear‐parabolic law still can be applied to the oxidation of Si in N 2 O and the interfacial nitrogen‐rich layers in these films result in oxide growth in the parabolic regime by impeding o...

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Ultrathin (58 AA equivalent oxide thickness) stacked Si₃N₄/SiO₂ (NO) films with the bottom oxide prepared by rapid thermal oxidation (RTO) in O₂ and the top nitride deposited by rapid thermal processing chemical vapour deposition (RP-CVD) were fabricated and studied. Results show that the charge trapping...

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The authors report the use of rapid thermal reoxidized nitrided (RTN/RTO) gate oxides in BF₂⁺-implanted polysilicon gated p-MOSFETs to achieve excellent barrier properties against the boron penetration. In addition, excellent electrical characteristics including both on- and off-states are demonstrated. Results show that thin...

A novel technique for the fabrication of ultrathin MOS gate dielectrics for ULSI applications has been developed by oxidizing Si substrates in pure N₂O. This technique has several advantages over conventional thermal oxidation of Si in O₂. Si oxidation rate in N₂O is significantly lower than in O₂, allowi...

Electrical and reliability properties of MOS gate oxides prepared by furnace oxidation of Si in an N/sub 2/O ambient have been studied. The thickness uniformity of N/sub 2/O oxides is comparable to that of the control oxides grown at the same temperature. Time-zero breakdown tests reveal similar breakdown field distributions for both oxides. Device...

Current conduction, interfacial integrity, and charge trapping characteristics of 200 Å rapid thermal nitrided/reoxidized (RTN/RTO) chemical vapor deposited (CVD) SiO2 are studied. Results show that RTN reduces the leakage current of CVD oxides, contrary to the effects of RTN on thermal oxides. The as-deposited CVD oxide after rapid thermal anneali...

Radiation‐hardened, fluorinated gate oxides have been obtained by rapid thermal processing of silicon in O 2 with diluted NF 3 . Diluted NF 3 is used as a source of fluorine and is introduced during the initial stage of rapid thermal processing. It is found that optimum amounts of fluorine incorporated at the Si/SiO 2 interface improve resistance a...

Chemical composition and growth kinetics of ultrathin SiO 2 films formed by rapid thermal oxidizing Si substrates in N 2 O have been studied. Both Auger electron spectroscopy (AES) and x‐ray photoelectron spectroscopy (XPS) revealed nitrogen pile‐up at the SiO 2 /Si interface. Nitrogen concentration at the oxide surface and throughout the bulk was...

Rapid thermal processing (RTP) was applied to the fabrication of the ultrathin ( approximately 10 nm) high-quality fluorinated oxides in O/sub 2/+NF/sub 3/. NF/sub 3/ (diluted in N/sub 2/) was used as the F source gas and was introduced either prior to rapid thermal oxidation (RTO) or with O/sub 2/ during the initial stage of RTO. The electrical ch...

A novel technique is proposed to characterise the charge trapping properties of MOS capacitors by using the gate voltage ramping test. The parameter I=1-I_g(t)/I_s(t+ Delta t) measured during gate voltage ramping reveals the dielectric charge trapping characteristics. Positive charge trapping before dielectric breakdown was obse...

The carrier effective mobility μ eff in the inversion layer for both n‐ and p‐channel metal‐oxide‐semiconductor field‐effect transistors with ultrathin gate dielectrics prepared by rapid thermal reoxidation (RTO) of rapid thermal nitrided (RTN) SiO 2 has been studied. It is found that although RTN/RTO degraded the low‐field μ eff , it improved sign...

High quality ultrathin fluorinated gate oxides have been grown for the first time by rapid thermal processing in diluted NF 3 and O 2 . The chemical and electrical properties of fluorinated oxides have been studied as a function of growth conditions.

In this letter, effects of post-nitridation anneals on charge trapping properties and charge-to-breakdown (Qbd) of thin (∼8.6 nm) rapidly thermal nitrided (RTN) gate SiO2 have been studied. Post-nitridation anneals consist of either rapid thermal reoxidation (RTO) in pure O2 or rapid thermal anneal (RTA) in pure N2 ambient. Both the gate voltage sh...

The hot‐carrier immunity of submicrometer (0.8 μm) n‐channel metal‐oxide‐semiconductor field‐effect transistors with thin (∼8.6 nm) oxynitride gate dielectrics prepared by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO 2 has been studied. The hot‐carrier immunity was evaluated in terms of hot‐carrier‐induced transconductance...

Effects of post‐nitridation anneals on radiation hardness of metal‐oxide‐semiconductor (MOS) capacitors with rapid thermal nitrided (RTN) gate oxides have been studied. Post‐nitridation anneals consisted of either rapid thermal reoxidation (RTO) in pure O 2 or rapid thermal anneals (RTA) in pure N 2 ambient. The radiation was performed by exposing...

In this paper, effects of rapid thermal oxidation (RTO) on electrical characteristics of thin (200 Å) chemical‐vapor‐deposited (CVD) SiO 2 have been studied. Current density‐electric field (J‐E) characteristics, flat‐band voltage, and gate voltage shifts under constant‐current stressing were also examined. Results show that RTO improves the charge...

Thin stacked SiO 2 /Si 3 N 4 /SiO 2 (ONO) films have been fabricated for the first time using in situ multiple step rapid thermal processing chemical vapor deposition (RTP‐CVD). Stacked Si 3 N 4 /SiO 2 (NO) layers were deposited in situ by RTP‐CVD. Some samples received an in situ rapid thermal oxidation immediately after stacked layer deposition t...

The hot-electron-induced interface state generation in thin ( approximately 8.6 nm) oxynitride films prepared by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO₂ have been studied. Both MOS capacitors and MOSFETs were used as testing devices. For MOSFETs charge-pumping current I_cp measurement was performe...

The radiation-induced interface state generation Delta D_it in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO₂. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (S...

The radiation hardness of metal‐oxide semiconductor capacitors with nitrided oxides prepared by rapid thermal nitridation (RTN) has been studied. The radiation was performed by exposing devices to 50 keV x ray to a dose of 0.5 Mrad (Si). Compared to conventional thermal oxides, the rapid thermal nitrided oxide devices exhibit much less increase in...

This letter presents electrical characteristics of thin (110 A˚) metal-oxide-semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized-nitrided CVD dielectrics exhibit lower rates of interface-state generation and electron...

The radiation hardness of MOS devices with ultrathin nitrided oxides ( approximately 100 AA) prepared by rapid thermal nitridation (RTD) of thin oxides has been studied. The radiation was performed by exposing devices under X-rays of 50 keV to a dose of 0.5 Mrad(Si). Compared with conventional thermal oxides, the RTN oxide devices exhibit a much sm...

High-quality oxynitride gate dielectrics have been fabricated by rapid thermal processing of LPCVD SiO₂ in reactive ambients (NH₃ and O₂). The as-deposited CVD oxides of 200 AA in thickness show no early breakdowns. The breakdown distribution becomes tighter, the interface state density is reduced, and the interface...

The electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambient (O₂ and NH₃) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown and interface hardness in oxynitride films have been char...

The authors have developed a salicide process for CMOS (complementary metal-oxide-semiconductor) applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA (rapid thermal annealing) drive-in for shallow silicided junction formation and have investigated the fundamental issues related to this process. Specif...