Vitaly G. Deibuk

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• Professor, Dr. Sci.
• Professor at Yuriy Fedkovych Chernivtsi National University

The increase in computing power and the development of low-power computing, quantum computing, and the Internet of Things require lossless and reliable approaches to information processing. Based on previous results, this work aims to develop a new fault-tolerant reversible encryption device with an optimal number of components, delay time and auxi...

Considering the relentless progress in the miniaturization of electronic devices and the need to reduce energy consumption, technical challenges in the synthesis of circuit design solutions have become evident. According to Moore's Law, the reduction of transistor sizes to the atomic scale faces physical limits, which complicate further development...

Thermoelectric materials are the basis of devices for directly converting thermal energy into electrical energy, thereby creating a reliable prospect for the development of the energy industry. The wide possibilities of miniature devices, which have recently opened up in connection with the use of Internet of Things technology, urgently require fle...

The article theoretically studies the phase stability of thin films of pseudobinary semiconductor alloys ZnSb–SnTe. The obtained T – x phase diagrams made it possible to predict the existence of a wide miscibility gap. Taking into account small internal stresses and the influence of the quartz substrate, significant changes in the phase diagram wer...

The Fredkin gate is a universal reversible logic gate widely used in designing low-power and quantum devices of various complexities. Recently, the gate's extension was proposed based on its elementary components. It provided variety in functionality and, at the same time, preserved the main features of the gate. This paper offers additional variat...

Abstract. The features of fusion and growth of Cd1–xMnxTe (0.02 x  0.55) solid solution crystals as well as the dependence of their microhardness on the composition have been studied. Local maxima of the microhardness at x = 0.14 and 0.46 have been experimentally found. Thermodynamics of Cd1–xMnxTe formation in the delta-lattice parameter model h...

Processors have become increasingly overloaded with transistors in the last few years. It causes heat dissipation and, as a result, error occurrence. One of the ways to solve those problems is to use reversible logic instead of the classical one. Therefore, reversible gates implemented in CMOS are valuable assets in electronic circuitry. The paper...

The paper represents synthesis of the reconfigurable reversible fault-tolerant gate in the basis of generalized Fredkin gates. The gate is designed for an FPGA (Field Programmable Gate Array). Additionally, a genetic algorithm was used to optimize the characteristics of the circuit such as number of gates, quantum cost, delay, number of auxiliary i...

The effect of frequency noise on correct operation of the multiple-control Toffoli, Fredkin, and Peres gates has been discussed. In the framework of the Ising model, the energy spectrum of a chain of atoms with nuclear spins one-half in a spinless semiconductor matrix has been obtained, and allowed transitions corresponding to the operation algorit...

The Fredkin gate is a reversible self-inverse logic gate that maintains parity, so it is widely used in DNA computing, low-power CMOS, quantum computing, and nanotechnology. The paper proposes a design of the multiple-control Fredkin gate based on the model of a chain of atoms with nuclear spins one-half in a spinless semiconductor matrix. The allo...

The advantages of quantum computing may be lost due to the presence of various noises in real quantum devices. In this paper, generalized Peres gates are studied using a solid-state model of a linear chain of atoms with nuclear spin one half, which is implanted in a spin-free silicon matrix. The effect of frequency noise on the correctness of gates...

We consider a physical realization of the generalized quantum Peres and Toffoli gates with n-control signals, implemented in a one-dimensional chain of nuclear spins (one half) in a strong magnetic field coupled by an Ising interaction. Quantum algorithms in such system can be performed by transverse electromagnetic radio-frequency field using a nu...

The extensive use of the principles of reversible computing makes it possible to minimize energy losses during the operation of computer devices. The design of reversible memory elements of the ternary logic is an actual task because they are necessary devices of modern electronics. In the paper, the main reversible sequential elements of the terna...

The diagrams of spinodal decomposition and critical temperatures of decomposition of epitaxial thin films of Cd-Zn-Sb semiconductor substitution solid solutions are calculated in the delta lattice parameter model with the account of both deformation energy and plastic relaxation effects due to misfit dislocations. Within the framework of the propos...

We have described the use of adaptive genetic algorithm to find the optimal design of ternary reversible/quantum logic devices. Due to complexity of physical realization of quantum gates with more than two inputs related to the difficulty of controlling them, we used liquid ion-trap realizable 1-qutrit gates and 2-qutrit Muthukrishnan-Stroud primit...

Multiple-valued logic is a promising choice for future computer technologies which provides a set of advantages comparing to binary circuits. We have developed an adaptive genetic algorithm for ternary reversible circuits using Muthukrishnan-Stroud gates. The method for chromosomes coding, as well as a reasonable choice of algorithm parameters, all...

Multiple-valued logic is a promising choice for future computer technologies, which provides a set of advantages comparing to binary circuits. We have developed an adaptive genetic algorithm for ternary reversible circuits using Muthukrishnan-Stroud gates. The method for chromosomes coding, as well as a reasonable choice of algorithm parameters, a...

Multiple-valued logic is a promising choice for future computer technologies, which provides a set of advantages comparing to binary circuits. In this paper, we have developed a genetic algorithm-based synthesis of ternary reversible circuits using Muthukrishnan-Stroud gates. The method for chromosomes coding, as well as a reasonable choice of algo...

Typical methods of quantum/reversible synthesis are based on using the binary character of quantum computing. However, multi-valued logic is a promising choice for future computer technologies, given a set of advantages when comparing to binary circuits. In this work, we have developed a genetic algorithm-based synthesis of ternary reversible circu...

Methods of quantum/reversible logic synthesis are based on the use of the binary nature of quantum computing. However, multiple-valued logic is a promising choice for future quantum computer technology due to a number of advantages over binary circuits. In this paper we have developed a synthesis of ternary reversible circuits based on Muthukrishna...

Typical methods of quantum/reversible synthesis are based on using the binary character of quantum computing. However, multi-valued logic is a promising choice for future computer technologies, given a set of advantages when comparing to binary circuits. In this work, we have developed a genetic algorithm-based synthesis of ternary reversible circu...

Methods of quantum/reversible logic synthesis are based on the use of the binary nature of quantum computing. However, multiple-valued logic is a promising choice for future quantum computer technology due to a number of advantages over binary circuits. In this paper we have developed a synthesis of ternary reversible circuits based on Muthukrishna...

Four-spin model of single-digit summator for solid state nuclear magnetic resonance (NMR) quantum computer is proposed. Correctness of summator’s operation is analyzed in dependence of system parameters. It is found that the summator on Peres gates works correctly in time of four π-pulses on pure numerical and superposition states. Optimal values f...

Навчальний посібник містить основні відомості про систему схемотехнічного моделювання, рекомендації щодо технології підготовки та створення електронних схем, завдання до 20 лабораторних робіт. Для студентів напрямку "Компютерні науки" а також неелектричних спеціальностій вузів.

Four-spin model of single-digit full adder for solid state nuclear magnetic resonance (NMR) quantum computer is proposed. Correctness of adder’s operation is analyzed in dependence of system parameters. It is found that the adder on Peres gates works correctly in time of four π-pulses on pure numerical and superposition states. Optimal values for e...

The paper suggests a new way of chromosome coding in genetic algorithm for simulation of reversible full adder with propagate based on Fredkin gates. The circuits obtained with the use of such an approach demonstrate better delay parameters and the number of garbage outputs compared to the known analogs, pointing out the effectiveness and applicabi...

Four-spin model of single-digit full adder for solid state nuclear magnetic resonance (NMR) quantum computer is proposed. Correctness of adder’s operation is analyzed in dependence of system parameters. It is found that the full adder on Peres gates works correctly in time of four π-pulses on pure numerical and superposition states. Optimal values...

The textbook covers the basics of the theory of electric and magnetic circles in time and frequency domains. The methods of analysis and properties of DC circuits, sinusoidal and non-sinusoidal circuits, transient and pulsed processes in linear electric circuits, as well as circles with distributed parameters are considered. The theoretical materia...

Навчальний посібник містить матеріали лабораторного практикуму дисципліни "Алгоритми та методи обчислень" для напряму "Компютерна інженерія". Перша частина містить 10 занять, які охоплюють основи середовища візуального програмування MathCad. У другу частину увійшли 5 лабораторних робіт з теорії похибок і машинної арифметики, методів розв"язання нел...

In this paper, theoretical investigations of thermal properties of CdSb crystals caused by their use for the design of both conventional thermocouples and anisotropic thermoelements are represented. The operating principle of AT is based on the anisotropy of thermoelectric and thermal properties of these crystals. The AT have found particularly wid...

The influence of detuning of radio frequency magnetic field (RFMF) on the functioning of nuclear magnetic resonance (NMR) quantum Fredkin gate is considered in this paper. It is shown that detuning of frequency decreases a probability of correct answer. If the spectral broadband of RFMF signal is increasing, then the main value of correct answer pr...

The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14?m

The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14 m.

The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin CdMnHgTe and ZnMnHgTe films have been studied. The model constant K of delta-lattice parameter method is determined by fitting the calculated spinodal isotherms to the experimental data. It was shown that the narrowing of th...

This paper presents theoretical investigation on the influence of manganese and zinc in solid solutions of Hg1−x−y−zAxByCzTe on changes in the electron effective mass.

The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg1−x−y−zCdxMnyZnzTe via optical measurements. Modeling of the edge of fundamental absorption for Hg1−x−y−zCdxMnyZnzTe is performed and specifying values of the bandgap at room temperature in crystals under study are determined.

The thermodynamic stability of Cd1−x HgxTe, MnxHg1−x Te, and ZnxHg1−x Te alloys is studied. Calculations performed in the context of the δ lattice-parameter model indicate that CdHgTe and ZnHgTe alloys are stable over the entire range of compositions at typical growth temperatures. At the same time, a miscibility gap is found in MnxHg1−x Te at 0.33...

The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from the free energy of mixing being based on application of the delta-lattice parameter method to the experimental data, the model...

The physical parameters of a new five-component HgCdMnZnTe semiconductor alloy are studied. It is shown that this material is quite competitive with HgCdTe, i.e., the basic material for photoelectronics in infrared ranges of 3–5 and 8–14 μm.

A model of the delta lattice parameter is used to study the thermodynamics of AlGaN, InGaN, and InAlN alloys. The phase diagrams obtained indicate that AlxGa1−x N is stable in the entire range of x, whereas the miscibility gap corresponds to 0.2 < x < 0.69 for InxGa1−x N and to 0.16 < x < 0.7 for InxAl1−x N at 1000 K. Biaxial stresses lower the cri...

Introduction to MathCad

Chemical bonding and electronic properties of III-nitrides solid solutions are stud-ied using a model empirical pseudopotential method in modified virtual crystal approxima-tion taking into account positional and compositional disorder. The changes in chemical bonding are analyzed in different ionicity models. The bowing is mainly caused by composi...

The effect of compositional and positional disorder on electronic properties of (Group III)-nitride solid solutions with the wurtzite structure was studied by the method of a model empirical pseudopotential using 32-atom supercells. The calculated values of the band-gap bowing parameter are found to be equal to 0.44, 2.72, and 4.16 for AlGaN, InGaN...

The electronic structure of bulk and biaxially deformed Ge 1-xSix, Ge1-xSnx, Si 1-xSnx, Si1-xCx solid substitutional solutions is calculated using the local model pseudopotential method as well as compositional and positional disorder. The influence of different types of disorder and deformations on the behaviour of dielectric function is explained...

The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the rang...

Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibil-ity behavior of alloy films. It was shown the existence of critical thickness for the Ge x Si 1-x , Ge 1–x Sn x , Si 1–x Sn x , Si 1–x C x thin solid films. The results of the cl...

The chemical bonding of GaP, InP, InAs, InSb, and InBi binary compounds was investigated as well as the modification of the bonding in GaxIn1−x P, InAsxSb1−x , and InSb1−x Bix semiconductor alloys; this modification occurs as a result of variation in the composition characterized by the parameter x. An approach based on the consideration of the tot...

The electron band structure of GaxIn1−x P bulk solid solutions was calculated by the local model pseudopotential method taking into account lattice mismatch. The resulting local strain of the lattice was taken into account in calculations of effective mass and deformation potential. The main optical characteristics of GaxIn1−x P alloys can be expla...

It is shown that optical reflectance spectra of Al0.1Ga0.9N thin films deposited on sapphire substrates exhibit some special features in the range of 4.0–5.5 eV, which is confirmed by modulation and photosensitivity spectra. These special features can be explained taking into account the biaxial strain when calculating the dielectric function in th...

The total energy for an unconstrained and biaxially confined model of Ge1−x Snx alloys was calculated using molecular-dynamics simulation. This made it possible to study the thermodynamic stability of both disordered and ordered phases of the semiconductor alloys. A remarkable suppression of the phase separation in Ge1−x Snx due to biaxial strain w...

Structural and thermodynamic properties of some diamond-like solid solutions. The bond lengths distributions of GexSi1-x, GexSn1-x, SixSn1-x alloys are investigated by molecular dynamic method based on Tersoff potential. We evaluate the thermodynamic stability and the influence of the lattice mismatch for it.

Structural properties of Ge1−x Snx substitutional solid solutions were investigated using a molecular-dynamics simulation with the Tersoff three-particle potential. Composition dependences were calculated for pair distribution functions, the total energy of the system, and bond lengths in compositional-disordered alloys. A satisfactory agreement wa...

The band structure of AlxGa1−x N substitutional solid solution is calculated by the method of local model pseudopotential in the modified virtual-crystal approximation. This provides an opportunity to explain both the dependence of the energy gap value (E g ) on AlN concentration (x) and on temperature and the E g (x) bending. The dynamics of che...

InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculat...

InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculat...

The empirical pseudopotential method including the spin-orbit interaction is used to calculate the band structure of the substitution solid solution InSb1-xBix. This makes it possible to study the dependence of the band gap on the temperature and composition of the alloy in the virtual-crystal approximation. The calculations are in good agreement w...

Investigation of structural properties of solid solutions of Ge-Si substitution by molecular dynamics. Structure properties of SixGe1-x alloys are studied with molecular dynamics simulation. The re-sulting lattice parameter follows Vegard’s low very closely.

A nonlocal empirical pseudopotential scheme that includes the spin-orbit interaction is used to calculate the electronic structure of In1−x GaxSb solid solutions. A modified virtualcrystal approximation is used to explain the nonlinear experimental dependence of the width of the band gap on composition. The computed band structure is then used to c...

A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependences of energy gap are studied. The results are in good agreement with avail...

A nonlocal empirical pseudopotential scheme that includes the spin-orbit interaction is used to calculate the electronic structure of In1-xGaxSb solid solutions. A modified virtual-crystal approximation is used to explain the nonlinear experimental dependence of the width of the band gap on composition. The computed band structure is then used to c...

The effect of 3d impurities on the physical properties of semiconductors is studied. These impurities produce deep levels in various semiconductors. However, in most cases the actual depth of these levels remains unknown. This problem is solved for CdTe and ZnSe using the molecular cluster method with self-consistent charges and configurations of a...

The possibility of substantial influence of a manganese impurity on the magnetic and optical properties of CdTe, which is explained by the state and interaction of the Mn 3d5-electron spins in the CdTe crystal lattice, is shown in [1–3]. An investigation of the influence of the Mn impurity on current carrier scattering in this material is of intere...

The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg 1−x−y−z Cd x Mn y Zn z Te via optical measurements. Modeling of the edge of fundamental absorption for Hg 1−x−y−z Cd x Mn y Zn z Te is performed and specifying values of the bandgap at room temperature in crystals under study are determined.