Vincent Mortet

Vincent Mortet
Institute of Physics ASCR | FZU · Department of Functional Materials

Ph.D Thesis

About

223
Publications
24,793
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Introduction
Dear All, Our research group carries out research on diamond synthesis, properties, and applications. We developed extended expertise on the synthesis of boron-doped diamond layers (epitaxial, nanocrystalline, large area). Sincerely, V.M.
Additional affiliations
December 2013 - present
Institute of Physics ASCR
Position
  • Senior Researcher
Description
  • Group leader
January 2011 - October 2013
March 2004 - December 2010
Hasselt University
Position
  • Researcher

Publications

Publications (223)
Article
Free-standing porous boron-doped diamond (fs-pBDD) was successfully fabricated and employed as a flow-through working electrode in flow injection analysis (FIA) experiments for the first time. Fs-pBDD was fabricated by micro-wave plasma enhanced chemical vapour deposition growth of BDD on a SiO2 nanofiber template spin coated onto a silicon substra...
Article
Pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond were successfully fabricated using molybdenum as a metal for both the Schottky and ohmic contacts. After metal deposition, diodes were stabilized by annealing for 20 min at 300 °C and their I-V and CV characteristics were measured at temperatures from 30 to 180 °C. Results s...
Article
Porous Diamond with Large Electroactive Surfaces In article number 2200375, Petr Ashcheulov, Ondřej Hák, and co‐workers demonstrate fabrication of diamond with porous structure. Porous diamond enables effective electrochemical treatment of water pollutants and sensing of biomolecules. The reported strategy allows for manufacturing of porous diamond...
Article
Highly functional 3D biological systems, which are ordinary in this physical world, suggest that traditional planar/flat materials when assembled into 3D variants, can deliver significantly higher levels of functionality and efficiency. Thanks to its set of unique properties, diamond has received significant recognition as the material of choice fo...
Article
In this work, phosphorus-doped polycrystalline diamond layers were grown using a new gas control process to increase the incorporation of phosphorus in diamond. Topographical characteristics and crystalline quality of the phosphorus-doped polycrystalline diamond layers grown on Si substrates were analyzed using Scanning Electron Microscopy (SEM) an...
Article
The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of methinophosphide formation in a methane / hydrogen...
Article
Boron-doped diamond layers have been grown by MW PECVD on substrates with a misorientation over the range of 0 to 90° relative to the (100) crystalline plane while keeping all other growth conditions constant. Deposited layers were characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. The deposition rate, s...
Article
The use of {113} oriented single crystal diamond substrates has been reported for CVD growth of high-quality p-type layers with increased doping efficiency, compared to the {100} orientation, and excellent electrical properties. In this work we expand the range of crystal orientations to include the {118} and {115} planes and study the effect of B...
Conference Paper
Boron-doped diamond (BDD) is a well-established electrode material possessing unique properties [1], however, its performance can be significantly boosted by enlarging the effective surface area. For this reason, approaches focusing on fabrication of porous BDD (p- BDD) electrode materials have been emerging and such electrodes have attracted lots...
Article
Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 10¹⁹ to 10²¹ cm⁻³). Morphology and thickness of deposited layers were determined by AFM and X-SEM; resistivity, carrier concentration and mobility wer...
Article
Novel porous boron-doped diamond (BDDporous)-based materials have attracted lots of research interest due to their enhanced detection ability and biocompatibility, favouring them for use in neuroscience. This study reports on morphological, spectral, and electrochemical characterisation of three BDDporous electrodes of different thickness given by...
Article
We propose a label-free biosensor concept based on the charge state manipulation of nitrogen-vacancy (NV) quantum color centers in diamond, combined with an electrochemical microfluidic flow cell sensor, constructed on boron-doped diamond. This device can be set at a defined electrochemical potential, locking onto the particular chemical reaction,...
Article
Chemically inert and biocompatible boron-doped diamond (BDD) has been successfully used in neuroscience for sensitive neurochemicals sensing and/or as a growth substrate for neurons. In this study, several types of BDD differing in (i) fabrication route, i.e. conventional microwave plasma enhanced chemical vapour deposition (MW-PECVD) reactor vs. M...
Article
Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works indicate that boron-doped and phosphorous-doped diamond can be grown on atomically stepped (113) surfaces (A. Tallaire et al., 201...
Presentation
Full-text available
Although a Raman spectroscopy presents a basis for an effective assessment of the atomic boron concentration in the boron-doped diamond, determination of further physical properties of diamond using non-destructive Raman approach requires advancement in the Raman analysis. In this work, we analyze Raman spectra of heavily boron-doped epitaxial (113...
Article
In this work, current multiplication at high electric field in epitaxial boron-doped diamond with high acceptor concentration is analyzed, including self-heating effect and impurity impact ionization. Quasi-static current-voltage (I-V) characteristics were measured using a transmission-line pulse setup with 100 ns pulse duration on samples with two...
Article
Transparent conductive electrodes are principal components in various optoelectronic devices and technologies. As such, diamond coatings in the form of electrically conductive thin films are envisioned to provide advantageous chemical and mechanical characteristics/stability in a variety of modern technologies including optoelectronics, biosensing,...
Article
Although Raman spectroscopy is a good tool for effective assessment of atomic boron concentration in diamond, determination of further physical properties using this non-destructive approach requires advancement in Raman analysis. In this work, we present an extended study of the Raman spectrum of boron-doped diamond, over a broad boron doping rang...
Article
a‐SiC:H diode structures with different ratios of Si:C on transparent conductive boron‐doped diamond coated fused silica substrates, have been deposited by plasma enhanced chemical vapour deposition. Boron‐doped diamond thin films were deposited at temperature 720 °C on fused silica substrates with a Ti grid used to enhance electrical conductivity....
Conference Paper
Full-text available
1] V. Mortet et al., "Analysis of heavily boron-doped diamond Raman spectrum," Diamond and Knowledge of dopant concentration, carrier density and mobility are important parameters in the design and the fabrication of electronic devices. Heavily boron-doped (113) diamond (h-BDD) with metallic type conductivity is used for the formation of ohmic cont...
Conference Paper
Full-text available
With outstanding chemical stability, high thermal conductivity, high carrier mobility and extremely high breakdown voltage, diamond is a highly attractive semiconductor material for future high-power electronic devices. Although the synthesis of p-type boron-doped diamond is well understood, the synthesis of n-type phosphorus-doped diamond is compl...
Article
Full-text available
Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the...
Article
Complex characterization of as-deposited conventional planar and newly available porous boron doped diamond (BDD) films with various boron doping levels (B/C ratio in the gas phase: 500 ppm, 1000 ppm, 2000 ppm, 4000 ppm, and 8000 ppm) was carried out by scanning electron microscopy, Raman spectroscopy and electrochemistry by performing cyclic volta...
Article
The integration of diamond layers brings biocompatibility and enhanced stability of biomolecules to Love wave devices for promising biosensor applications. Love-Wave Surface Acoustic Wave (LW-SAW) devices consisting of an ST-cut quartz substrate with a silicon oxide layer coated by a thin diamond layer have been fabricated. The effect of nucleation...
Data
Picture of the plasma and its optical emission spectrum
Article
Hydrogenated amorphous substoichiometric silicon carbide (a‐Si1‐xCx:H, x < 0,1) thin films and diodes with low carbon content were prepared from a mixture of H2, SiH4 and CH4 by plasma enhanced chemical vapour deposition at a relatively high temperature of 400 °C on semi‐transparent boron‐doped nanocrystalline diamond (B‐NCD) electrodes with an und...
Article
Full-text available
The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. Howev...
Article
Boron doped diamond is a prospective material which can be used as a conductive and optically transparent thin-film electrode in a variety of optoelectronic applications. In this work, we present the results of the temperature resolved electrical conductivity, optical reflection, transmission and absorption of thin boron doped nanocrystalline diamo...
Article
Electrical properties of epitaxial boron-doped diamond layers are studied at high electric fields in a wide range of boron concentration. Current-voltage characteristics co-planar concentric disk ring electrodes devices were measured using transmission line pulsed (TLP) characterization technique. Finite element method shows the electric field betw...
Article
Comparative studies (nanoindentation and micro-scratch tests) of the mechanical properties of composite diamond/silicon carbide and diamond layers deposited by a microwave plasma enhanced chemical vapour deposition system with linear antennas, show that composite layers have significantly superior scratch resistivity. Chemical and structural charac...
Chapter
Full-text available
In this work we develop DNA sensors that are based on charge switching in colour centres in diamond. The presented method allows the combination of luminescence sensor and electrochemical sensor working on the principle of electrochemical impedance spectroscopy (EIS). The sensor employs specifically designed diamond structures grown by the means of...
Article
The interaction of Love waves with square array of pillars deposited on a cavity defined in a 2D holey phononic crystal is numerically investigated using Finite Element Method. First, the existence of SH surface modes is demonstrated separately for phononic crystals that consist of square arrayed holes, or rectangular arrayed Ni pillars, respective...
Poster
Full-text available
Micro-Raman spectroscopy is a fast and sensitive contactless characterization method of structural and electronic transport properties in semiconductors. This method can be used to determine dopant concentrations in various semiconductors. Heavily boron-doped diamond (h-BDD) with metallic type conductivity is used for the formation of ohmic contact...
Article
Raman spectroscopy has been foreseen as a simple and non-destructive characterization method to determine the boron concentration in heavily boron-doped diamond with metallic conductivity. However, currently available empirical studies are not fully satisfactory for enabling accurate determination of the boron concentration in diamond. Here, we stu...
Experiment Findings
Full-text available
Raman spectroscopy has been foreseen as a simple and non-destructive characterization method to determine the boron concentration in heavily boron-doped diamond with metallic conductivity. However, currently available empirical studies are not fully satisfactory for enabling accurate determination of the boron concentration in diamond. Here, we stu...
Article
This article examines the ability of newly developed nanostructured porous boron‐doped diamond (BDD) to form an interface with neural cells and the role of molecular functionalization by a polymer on this interface. Due to its high stability, biocompatibility, and electrical properties, BDD is a promising material for construction of neuroelectrode...
Method
Full-text available
This new analysis method allows the determinantion of atomic boron concentration from the position of the diamond zone center phonon line.
Preprint
Full-text available
The interaction of Love waves with square array of pillars deposited on a cavity defined in a 2D holey phononic crystal is numerically investigated using Finite Element Method. First, the existence of SH surface modes is demonstrated separately for phononic crystals that consist of square arrayed holes, or Ni pillars, respectively in, or on, a SiO2...
Conference Paper
With the development of chemical vapour deposition techniques, and thanks to its chemical and electrical properties, boron-doped nanocrystalline diamond has attracted the interest of electrochemists for various applications from chemical sensing to water treatment. Potential applications, such as super capacitors and dye sensitized solar cells, wou...
Conference Paper
With the development of chemical vapour deposition techniques, and thanks to its chemical and electrical properties, boron-doped nanocrystalline diamond has attracted the interest of electrochemists for various applications from chemical sensing to water treatment. Potential applications, such as super capacitors and dye sensitized solar cells, wou...
Article
Full-text available
With the development of chemical vapour deposition techniques, and thanks to its chemical and electrical properties, boron-doped nanocrystalline diamond has attracted the interest of electrochemists for various applications from chemical sensing to water treatment. Potential applications, such as super capacitors and dye sensitized solar cells, wou...
Conference Paper
Diamond can become highly conductive due to impurity impact ionization and avalanche effects when sufficiently doped with boron and exposed to high electric field. Knowledge of those effects is important for the fabrication of potential novel high power electronic devices. High currents and voltages make characterization of impurity impact ionizati...
Article
The first systematic study of P1-dye attachment to the surface of H-terminated boron-doped diamond (BDD) surface was carried out. Details about surface anchoring chemistry were explored on model nanodiamond particles. The electronic properties of boron doped diamond films were tuned from semiconducting to quasi-metallic ones. The relevant materials...
Article
Lattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However, no accurate unified description of this spectrum has been reported yet. In this work, we propose a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of elec...
Article
Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical water splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal towards a suitable protection of otherwise unst...
Article
Porous boron-doped diamond (BDD) is fabricated by consecutive plasma enhanced chemical vapor deposition on a 3D porous SiO2 fiber template deposited by spin coating (SC). The fabricated highly doped and mechanically stable porous BDD layers are characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The roughness factor of the p...
Article
We report on the optimisation of precursor gas composition for the repeatable preparation of large area highly conductive boron doped nano-crystalline diamond layers with low sp2 content using microwave plasma enhanced linear antenna chemical vapour deposition apparatus. The precursor gas composition parameter space was probed by varying the boron,...
Article
Formation of ohmic contacts on boron-doped diamond using zirconium and niobium has been studied in comparison to the commonly used titanium or tantalum contacts. Metal contacts were fabricated using standard micro-fabrication technologies on epitaxial layers with different boron concentrations. Room temperature specific contact resistance was deter...
Article
With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave p...
Presentation
Full-text available
Discussion on electronic Raman scattering and multi-Fano effect in boron doped diamond Raman spectrum
Poster
Full-text available
Polycrystalline diamond (sp3-bonded carbon) thin films possess outstanding properties: high optical transparency, superior corrosion resistance, chemical inertness, controllable electrical characteristics by boron doping. Due to metal-like conductivity, boron-doped diamond (BDD) hold a potential to substitute metal-oxide electrodes (ITO, FTO) used...
Poster
Full-text available
Boron doped diamond is a semiconductor material with unique properties, which allows fabrication of novel electronic devices. For instance, the fabrication of a diamond MOSFET has recently been reported. Stable ohmic contacts with a low specific contact resistance are essential for the fabrication of power electronic devices. Until now, a large var...
Poster
Full-text available
Boron-doped nanocrystalline diamond attracts the interest of electrochemists for various applications from chemical sensing to water treatment. Potential applications, such as super-capacitors and dyesensitized solar cells, would greatly benefit from an increase in specific surface area. We recently reported a promising simple multilayer process us...
Poster
Full-text available
Diamond can become highly conductive due to impurity impact ionization and avalanche effects when sufficiently doped with boron and exposed to high electric field. Knowledge of those effects is important for the fabrication of potential novel high power electronic devices. High currents and voltages make characterization of impurity impact ionizati...
Conference Paper
Full-text available
Boron doped diamond layers have been grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, sm ooth (Rrms = 1 nm) boron doped diam...
Article
Full-text available
Four pairs of p–i–n structures based on polymorphous Si:H (pm-Si:H) are fabricated by the method of plasma-enhanced chemical vapor deposition. The structures in each pair are grown on the same substrate so that one of them does not contain Ge in the i-type layer while the other structure contains Ge deposited by molecular-beam epitaxy as a layer wi...
Poster
Full-text available
Boron doped diamond is a semiconductor material with unique properties, which allows fabrication of novel electronic devices. For instance, the fabrication of a diamond MOSFET has recently been reported. Stable ohmic contacts with a low specific contact resistance are essential for the fabrication of power electronic devices. Until now, a large var...
Article
Full-text available
This study focuses on the fabrication and characterization of Love wave surface acoustic wave (LW-SAW) sensors with a thin nano-crystalline diamond (NCD) coating with an integrated microfluidics system. The effect of diamond layer thickness on the acoustic wave phase velocity and the sensor’s sensitivity have been investigated experimentally and co...
Poster
Full-text available
ScN ultra-thin films were deposited on MgO (100) substrate at different temperatures varying from 400°C to 700°C. Raman Spectroscopy was used to observe the evolution of the crystallization of ScN films as function of the deposition temperature. Electrical and optical properties of each film were measured by ellipsometry and optical spectroscopy in...
Poster
Full-text available
Diamond is a unique semiconductor with a wide bandgap which usually is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal synthetic diamond can reach electrical conductivity as high as 103 S.cm, whereas polycrystalline material usually reaches c...
Poster
Full-text available
Boron doped diamond (BDD) with metallic conduction is recognized as one of the best working electrodes for various electrochemical applications. Measurement of boron concentration is an important feedback parameter. It is usually determined by Secondary Ion Mass Spectrometry and Hall effect measurements. However, Raman spectroscopy had been shown a...