Victor S Klimin

Southern Federal University | sfedu · Department of Micro- and Nanoelectronics

This paper presents the results of experimental studies of the modes of formation of nanosized structures on the surface of a silicon substrate by the method of focused ion beams (FIB). The regularities of the effect of the ion beam current, accelerating voltage, and radiation dose on the surface morphology of nanoscale structures are determined. T...

This paper presents a study of the use of silicon Si for element base manufacture of micro- and nanoelectronics by using combined methods of focused ion beams and atomic layer plasma chemical etching. This technology makes it possible to modify surface of Si substrates in the required topology and geometry, followed by removal of atoms to obtain na...

One of the significant limitations of the pulsed laser deposition method in the mass-production-technologies of micro- and nanoelectronic and molecular device electronic fabrication is the issue of ensuring deposition of films with uniform thickness on substrates with large diameter (more than 100 mm) since the area of the laser spot (1-5 mm2) on t...

This paper reports the impact of the laser pulse repetition frequency on growth processes, morphological and electro-physical parameters of nanocrystalline LiNbO 3 thin films obtained by the pulsed laser deposition technique. It was found that the nucleation process in LiNbO 3 films could controllably change by increasing the laser pulse repetition...

The use of focused ion beams and atomic plasma chemical etching for forming an array of field emission structures on surface of SiC substrates is considered. SF 6 was used as the fluorine-containing gas. Topology of formed elements was monitored using scanning electron microscopy method at Nova NanoLab 600. Dependences of geometric parameters of fo...

This paper presents a study of a vacuum gauge with a sensitive element based on an array of carbon nanotubes. In the course of the study, a plasma chemical vapor deposition method was used, which allows one to obtain oriented CNT arrays on various substrates. A feature of this method is the use of catalytic centers. A model for calculating the para...

The work considers the application of focused ion beam techniques for the formation of nanoscale structures, as well as the atomic layer etching method for removing layers with surface defects. Also in the work, modeling of the formation of structures by the FIB method on the GaAs surface was used to determine the depth of penetration of atoms into...

Consider formation of nickel catalytic centers from atomic flows obtained by the method of vacuum resistive evaporation. A model of formation kinetics of catalytic centers of nickel from atomic flows has been constructed. A complete model of theoretical studies of the formation of catalytic centers of nickel on a silicon surface is shown. A depende...

This paper reports the results of the influence of the energy of laser pulses during laser ablation on the morphology and electro-physical properties of LiNbO3 nanocrystalline films. It is found that increasing laser pulse energy from 180 to 220 mJ results in the concentration of charge carriers in LiNbO3 films decreasing from 8.6 × 1015 to 1.0 × 1...

This paper presents the technology of obtaining graphene films on the surface of SiC using a combination of methods of focused ion beams and plasma-chemical etching in a fluorine containing environment. For the formation of nanoscale structures with lateral dimensions of 280 nm, the method of focused ion beams was used. Nano sized structures were f...

This paper shows the results of study of the effect of SiO 2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO 3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO 2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO 3 films decreases from 5.1 nm to 4.4 n...

In this work, the effect of plasma on the formation of bulk nanoscale structures with lateral dimensions on the GaAs surface was studied. The relative change in the area of the bulk structures in different crystallographic directions is demonstrated, in comparing the before and after the operations of modification and profiling with a successive ch...

This paper shows the results of thermodynamic analysis of interfacial interaction in the lithium-niobium-oxygen system. The temperature dependences of the change in the Gibbs free energy calculated, taking into account the non-linear temperature dependences of the thermophysical properties of materials. Additionally, estimated the possibility of di...

The development of GaAs/Si heterostructures can be an important stage for use as solar cells, LEDs and lasers based on silicon substrates. At present, A3B5 compounds grown epitaxial on Si substrates are of great interest because of the monolithic integration of optoelectronic devices with Si-based microelectronics. High-quality epitaxial growth of...

The critical pressure of acetylene required for the formation of nanotubes on nickel catalytic centers of a given size was calculated by plasma chemical vapor deposition. It has been established that for a stable growth of carbon nanotubes on a catalytic center with a diameter of 20 nm, the critical pressure of acetylene should be 1.9 Pa, while the...

In this paper, we studied the effect of heating temperature on the geometric parameters of catalytic centers. The temperature range was from 600 to 900 °C with an interval of 50 °C, heating was carried out for 20 minutes. At the end of the experimental studies, the AFM and SEM images of the catalytic centers formed at various heating temperatures o...

Memristor effect in ZnO thin films was investigated. It was shown, that increase in the number of laser pulses during the formation of a thin ZnO film from 1000 to 3000 leads to increase resistance of ZnO film in the high resistance state (HRS) from 28.31±8.27 kΩ to 1943.53±123.11 kΩ and decrease resistance of ZnO film in the low resistance state (...

The regimes of submicron and nanosized profiling of the KDB-10 Si(100) wafer surface by the focused ion beam (FIB) technique are experimentally investigated. It is established that with an increase in the ion beam current from 1 to 300 pA, the diameter and depth of nanostructures increases from 45 to 380 nm and from 82 to 494 nm, respectively. The...

This paper presents results of the thermodynamic analysis of chemical processes in the Ni/Cr/Si structure during the formation of catalytic centers and the growth of carbon nanotubes on them. It is shown that before starting CVD process Ni/Cr/Si structure is oxidized in atmosphere, and the Cr underlayer oxidation occurs due to an exchange reaction...

This work is devoted to the analysis of problems of the present methods of surface treatment and the preparation of structures with nanoscale. The urgency of the work is caused by the fact that it uses the method of obtaining structures without the standard operations of optical lithography. The main methods of forming nanoscale structures in the w...

The article presents the results of experimental studies of the regimes of formation of self-organizing In/AlGaAs nanostructures by the method of droplet epitaxy under As-stabilization conditions at different Al content in the surface layer. Dependences of the influence of the growth temperature, surface composition, and deposition thickness on the...

In this article, the formation of the production of high-efficiency photovoltaic devices, solar cells is considered. Increased efficiency is achieved through the use of carbon nanomaterial. The use of carbon nanotubes increases the efficiency of solar photovoltaic due to efficient charge transfer in the device. Effective use of carbon nanomaterial...

This work is devoted to analysis of problems of present methods of surface treatment of nanostructures based on gallium arsenide. The idea of a combination of local anodic oxidation and plasma chemical etching methods was proposed to solve it. Oxide layers were used as negative masks for subsequent plasma chemical etching by the STE ICPe68 unit. BC...

This paper is devoted to development of technology of formation and obtaining of the design of a field emitter of electrons with an active region based on carbon nanostructures. The main idea of this technology is using of plasma methods, such as plasma chemical etching and plasma chemical vapor deposition. Using a magnetron sputtering method, subl...

The application of the focused ion beams method makes it possible to obtain modified surfaces serving as a masking layer for subsequent processing of semiconductor materials. The use of plasma chemical etching as a method for profiling modified surfaces makes it possible to obtain cleaner surfaces than for liquid etching. In this paper, experimenta...

This paper shows the results of the study of size effects of electro-physical parameters in nanostructured LiNbO3 thin films fabricated by pulsed laser deposition. Obtained results shown that with an increase in the number of laser pulses from 50 000 to 150 000, the maximum value of the amplitudes (psi) increases from 36 to 47, and phase shift (del...

This work presents the results of the formation and investigation of Al2O3/ZnO:In/ZnO/Ti memristor structures. It is shown that using Ti layer can improve memristive effect. Resistive switching from high resistance state (HRS) to low resistance state (LRS) occurred at 2.1±0.3 V, and from LRS to HRS at -1.5±0.3 V. Endurance test showed that HRS was...

The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion current and single FIB exposure time on the geometric characteristics of the forming nanosized profile and the etching rate of the surface of GaAs epitaxial layers are determined. It is establis...

We have created an ionization type Vacuum gauge with sensor element based on an array of vertically aligned carbon nanotubes. Obtained asymmetrical current-voltage characteristics at different voltage polarity on the electrode with the CNTs. It was found that when applying a negative potential on an electrode with the CNTs, the current in the gap i...

This experimental work is devoted to the regimes of obtaining arrays of carbon nanotubes. Arrays of perpendicular nanotubes perpendicular to the surface were obtained by the method of Plasma-enhanced chemical vapor deposition. In this paper, geometric and electronic parameters of carbon nanotubes were investigated depending on the material of the s...

In this paper, experimental studies were carried out on the formation of a microrelief on the surface of gallium arsenide substrates. The surface was modified by the method of plasma etching. Etching was carried out in a medium of chloride gas. In the work, the etching rates of the surface of gallium arsenide depend on the power of the inductively...

The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm² grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred a...

This work presents the results of the experimental investigations of nanostructure profiling using scratching probe nanolithography and plasma chemical etching. It is shown, that combination of these methods allows us to profile the silicon surface with height from approximately 7,8 to 38 nm and diameter from 670 to 123 nm.

The paper presents the experimental results of the combination of AFM lithography and plasma chemical etching the surface of the gallium arsenide samples. Results dilution and application modes for AFM lithography photoresist, also shown on the image forming modes photoresist surface. Showing results nanoprofilirovaniya surface. Results regimes pla...

In the experiments on the etched surface of gallium arsenide were performed. We studied the effect of BCl3 gas flow rate on the thickness of the etched layer. GaAs etching rate was: 537,4 nm/min 28,7 nm/min 2,6 nm/min, the values of the flow rate of BCl3 NBCl3 - 15, 10, 5 cc/min, respectively. The effect of BCl3 gas flow rate to the mean-square rou...