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42
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Introduction
My main expertising area is to grow semiconductor crystals, especially graphene beyond two-dimensional materials, fabricate and characterize electronic properties of new class of nanoelectronic devices.
-2D crystals
-2D semiconductors
-Low dimensional devices
-Nanoelectronic devices
Publications
Publications (42)
In this study, an artificial neural network (ANN) based model is developed for MEMS diaphragm analysis, which does not require difficult and time-consuming FEM processes. ANN-based estimator is generated for static pressure response (d) and dynamic pressure response (f) analysis of TLC (three leaf clover) diaphragms for Fabry-Perot interferometers...
We present a uniquely simple laser integrated in strictly single-mode fibers, producing bursts of 100- fs pulses at 50 GHz repetition rate at 100 W average power. This allows material processing with high efficiency and precision in the ablation-cooled regime.
Layered GaS structures have been attracting increasing research interest due to their highly anisotropic structural, electrical, optical, and mechanical properties. However, the investigation of the performance based on the responsivity, external quantum efficiency, and detectivity of printed GaS based photodetector on a flexible PET substrate with...
Lactate in humans is believed to provide unique information about the general health status of the individual, including pressure ischemia and insufficient oxidative metabolism [1]. Lactate in form of Lactic acid is widely used as an ingredient in food, cosmetics, and pharmaceuticals, and requires development of cost-effective methods for the deter...
Layered III-VI monochalcogenides such as gallium telluride (GaTe) and indium selenide (InSe) have positioned themselves for high-performance optoelectronics including radiation detectors and solar cells due to the optimum band gap as a solar window material and as semi-insulating at room temperature [1]. The unique crystal structure of GaTe induces...
In this study, the effects of mesa dimensions on sensor response in diaphragm-based Fabry-Perot fiber optic sensors (FOSs) were investigated in detail. Mesa diaphragms, also called center-embossed diaphragms, have been discussed sufficiently in the literature, but the effect of mesa thickness on sensor performance has not been discussed in detail....
Two-dimensional (2D) layered semiconductors of Group-III monochalcogenides have gained increasing attention in photonics and electronics. The fabrication of large-scale, inexpensive inks which can be used in printed electronics applications is facilitated by the solution processing of 2D materials. In this study, gallium sulfide (GaS)-, gallium sel...
Two-dimensional materials have become the focus of attention of researchers in recent years. The demand for two-dimensional materials is increasing day by day, especially with the inadequacy of graphene in optical applications. In this context, the optical and electrical characteristics of the PVP:GaSe thin film nanocomposites were investigated. Th...
In this study, the surface plasmon resonance-based fiber optic sensor using two-dimensional (2D) TMDC materials covering the Au/Ag bimetallic layer has been reported. Since MoS2, MoSe2, WS2, and WSe2 are the most popular ones, they are constructed as the resonant layer of the sensor. The layer-dependencies and heterostructures of the TMDC materials...
In the presented study, we discussed the thematic review of 68 recent conference studies focused on elementary and secondary school levels to enlighten the future needs of Optics and Photonics Education.
A novel structure with a fungus-shaped center embossed diaphragm (FCED) geometry has been proposed to modify in diaphragm-based Fabry-Perot fiber optic pressure sensors (FP-FOPS). The proposed FCED geometry was obtained by adding a pillar between the mesa and diaphragm. Before the simulation analysis of FCED, we derived mathematical equations of at...
In the presented study, the performance improvement of Au/PTCDA/n-Si diodes was demonstrated with the help of pre-irradiation of PTCDA powders. The crystallographic analysis was carried out by X-ray diffraction method after the pre-irradiation of PTCDA powders. After the vacuum deposition of pre-irradiated (PI) and unirradiated (UI) PTCDA thin film...
The main concern of the present study is to improve the performance of Au/Alq3/n-Si diode with the help of a high-energy electron beam (e-Beam) irradiation. Before the production of Au/Alq3/n-Si, the structural analysis was carried out by X-Ray diffraction (XRD) to ensure that the radiation-induced structural deformation does not occur on the Alq3...
The diaphragm-based sensor tip, which has a critical design in Fabry-Perot fiber optic acoustic sensor production, directly affects device performance. Fabry-Perot fiber optic acoustic sensors tip designs and investigations on different geometric dimensions and different diaphragm materials continue in the literature. In this study, it is predicted...
This paper focused on the experimental validation of diaphragm-based Fabry-Perot fiber optic pressure sensors (D-FP-FOPS) with ethylene propylene diene terpolymers (EPDM) diaphragm as designed and analyzed sensor tip theoretically. We also used self-adhesive EPDM rubber as a diaphragm for the first time in the literature. Analytical calculation and...
Algılanacak akustik/basınç sinyalinin şiddet ve frekans değerine
duyarlı uçlar üretmek diyafram tasarımının doğru yapılmasıyla sağlanır.
Kullanılan diyafram malzemesinin hem geometrik boyutları hem de yapısal
özellikleri (yoğunluk, Young modülü, Poisson oranı gibi) sensör performansını
etkileyen unsurlardır. Bu durumdan ötürü literatürde farklı tip...
The successive ionic layer adsorption and reaction (SILAR) method has been used to grow epitaxial CdS–polymer nanostructures as thin films with different surface morphology and particle size. The main purpose of the study was to investigate the dielectric properties and a.c. electrical conductivity (σ
a.c.), by a.c. impedance spectroscopy between 1...
In order to obtain the detailed information on the conduction mechanisms of the Au/n-GaAs Schottky barrier diode (SBD), the current–voltage (I–V) characteristics were carried out in the temperature range of 80–340 K by the steps of 20 K. The ideality factor (n) decreases, while the effective barrier height (ΦBo) increases with increasing temperatur...
The forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) have been investigated at room temperature by taking the interface states (Nss) and series resistance (Rs) effects into account. The voltage dependent profiles of...
This study presents the effect of illumination on main electrical
parameters of Schottky barrier diode (SBD). The admittance
(capacitance-voltage (C-V) and conductance-voltage (G/ω-V))
characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si
SBD were investigated in dark and under various illumination
intensities. Experimental resul...
The effects of interfacial insulator layer, interface states (Nss) and series resistance (Rs) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current–voltage (I–V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and with...
Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 °C and 675 °C, using AsH3 as n-type dopant. Gen/Gep, GaAsn/InGaPn/Gen/Gep and Gen/Gep/Gep structures were prepared and studied, where n and p identify the layer or substrate doping. Vertical mesa junctions were obtained on the above struct...
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/Zinc acetate doped polyvinyl alcohol/n-Si Schottky barrier diodes (SBDs) have been investigated over the temperature range of 80-400 K. The values of zero-bias barrier height evaluated from forward and reverse bias I-V data, (ФBFo) and (ФBRo), increase with incr...
The forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs) with Zn doped poly(vinyl alcohol) (PVA:Zn) interfacial layer have been investigated in the wide temperature range of 80–400 K. The conventional Richardson plot of the ln(Io/T2) versus q/kT has two linear regions: the first region (200–400 K) and the sec...
TiO2 thin films were deposited on polycrystalline n-type Si substrate using DC magnetron sputtering system. To improve the crystal quality, thermal annealing (TA) process was done at 700 °C and 900 °C. The effect of TA on the structural properties was investigated using high resolution X-ray diffraction (HRXRD). It was observed that the phase trans...
The quantum-well (QW) lasers are the most important optoelectronic devices in many application fields and the current-transport mechanisms (CTMs) are strongly depend on temperature and voltage. Therefore, we have examined the samples in the temperature range of 80–360K. The electrical parameters such as saturation current (Io), zero-bias barrier he...
Illumination intensity effects on the electrical characteristics of Al–TiW–Pd2Si/n-Si Schottky structures have been investigated in this study for the first time. The electrical parameters such as ideality factor (n), zero-bias-barrier height (ΦB0), series resistance (Rs), depletion layer width (WD) and dopping concentration (ND) of Al–TiW–Pd2Si/n-...
The purpose of this study is to analyze interface states (Nss) in Au/TiO2(Rutile)/n–Si Schottky barrier diodes (SBDs). TiO2 was deposited on a n–Si substrate by reactive magnetron sputtering and annealed at 900 °C for 4 h in atmosphere to obtain rutile phase. The current voltage (I-V) characteristics of SBDs were measured at room temperature. From...
The profile of the interface state densities (Nss) and series resistances (Rs) effect on capacitance–voltage (C–V) and conductance-voltage (G/ω–V) of (Ni/Au)/AlxGa1−xN/AlN/GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semicondu...
The aim of this work is to experimentally investigate the effect of series resistance (R-s) on current-voltage (I-V) characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures. The parameter R-s, the ideality factor (n) and barrier height (square(B)) are determined by performing different plots from the experimental forward bias I-V measurements. The cu...
The forward bias current-voltage (I-V) characteristics of Au-/n-Si(111) Shottky barrier diodes (SBDs) with native interfacial insulator layer have been investigated in the wide temperature range of 80-400 K. Their analysis on the basis of the standard thermionic emission (TE) mechanism reveals an abnormal decrease of the zero-bias barrier height (Φ...
In this study, we have examined Au/TiO2/n-Si Schottky barrier diodes (SBDs), in order to interpret in detail the experimental observed non-ideal current–voltage–temperature (I–V–T) characteristics. I–V characteristics were measured in the wide temperature range of 80–400K. TiO2 was deposited on n-Si substrate by reactive magnetron sputtering. The z...