Tong Xing

• Chinese Academy of Sciences

Recently, Ag 2 S-based compounds have aroused intensive research interest due to their metal-like ductility, high shape-conformability, and decent thermoelectric (TE) performance at room temperature. The melting–annealing method is commonly adopted to prepare Ag 2 S-based compounds. Compared with the melting–annealing method, the mechanical alloyin...

Metallic barrier layer is a key component in thermoelectric (TE) devices, but it is rarely investigated for the recently discovered inorganic ductile TE materials. In this work, we demonstrate that tungsten (W) is the excellent metallic barrier layer for Ag2S1−xSex ductile thermoelectric materials. The phase composition, microstructure, adhesive st...

Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be promising thermoelectric (TE) materials due to their decent thermoelectric performance. While Ge2Sb2Te5 and GeSb2Te4 have been extensively studied, the TE performance of GeSb4Te7 has not been well explored. Reducing the excessive carrier concentration is crucial t...

As the pseudo-binary alloys between GeTe and Sb 2 Te 3 , GeSbTe-based compounds are promising thermoelectric materials. Although Ge 2 Sb 2 Te 5 and GeSb 2 Te 4 have widely been studied, the thermoelectric properties of GeSb 4 Te 7 have not been well understood yet. In this work, we design a series of GeSb 4- x Bi x Te 7 solid solutions and systemat...

Bi2Te3-based alloys are the most mature commercial thermoelectric (TE) materials for the cooling application near room temperature. However, the poor mechanical properties of the commercial zone melting (ZM) ingot severely limits the further application. Meanwhile, due to the donor-like effect, the robust polycrystalline n-type bulks usually have l...

Binary Zn-Sb-based compounds, ZnSb and Zn4Sb3, are promising thermoelectric (TE) materials because they are low-cost and earth-abundant. However, for a long time, their real applications have been limited by the low TE figure-of-merit (zT) of ZnSb and poor thermodynamic stability of Zn4Sb3. In this study, we successfully integrate both high zT and...

Bismuth telluride-based materials are the most celebrated thermoelectric (TE) materials near room temperature. However, for the n-type bismuth telluride-based materials, the traditional powder metallurgy (PM) method, such as grinding and ball milling, can induce strong donor-like effect. The strong donor-like effect boosts the carrier concentration...

Recently, a deformable and ductile inorganic semiconductor Ag2S has attracted intense attention due to its potential application in self-powered wearable and hetero-shaped electronics. However, the thermoelectric figure of merit (zT) of Ag2S is greatly limited by its extremely low carrier concentration. In this study, via doping I into Ag2S-based m...

Recently, one-dimensional van der Waals crystal Ta4SiTe4 has been reported as a promising low-temperature thermoelectric material. Extraordinarily high power factor has been reported for the one-dimensional Ta4SiTe4 single whisker and two-dimensional (PVDF)/Ta4SiTe4 composite film, but the thermoelectric properties of three-dimensional Ta4SiTe4 pol...

High‐efficiency thermoelectric (TE) technology is determined by the performance of TE materials. Doping is a routine approach in TEs to achieve optimized electrical properties and lowered thermal conductivity. However, how to choose appropriate dopants with desirable solution content to realize high TE figure‐of‐merit (zT) is very tough work. In th...

Cu-Sn-S ternary compounds have attracted great attention in thermoelectric community because they are composed of low-cost, earth-abundant, and non-toxic elements. Among them, Cu7Sn3S10 shows promising thermoelectric performance in the middle temperature range. In this work, through doping Br in Cu7Sn3S10, a peak dimensionless figure of merit (zT)...

GeTe-based materials have a great potential to be used in thermoelectric generators for waste heat recovery due to their excellent thermoelectric performance, but their module research is greatly lagging behind the material research. In this work, we successfully fabricate a GeTe-based thermoelectric module and report a high energy conversion effic...

Substitution of Sb for Cu and the secondary phases (chalcostible and skinnerite) are introduced by Sb self-doping. The thermoelectric (TE) performance is mainly affected by substitution of Sb for Cu (Cu12-xSb4+xS13, x<0.3). When x reaches 0.3 or higher, the proportion of the secondary phases increases continuously, and the two effects work together...

Discovery of novel high-performance materials with earth-abundant and environmentally friendly elements is a key task for civil applications based on advanced thermoelectric technology. Advancements in this area are greatly limited by the traditional trial-and-error method, which is both time-consuming and expensive. The materials genome initiative...

Heusler-based compounds are a class of important inorganic materials with potential applications in spintronics, solar cell, thermoelectrics, opto-electronics, and so on. Previous studies mainly focus on half-Heusler compounds or full-Heusler compounds. In this work, a class of MCo1.5Sn (M = Ti, Zr, and Hf) compounds, which are named as three-quart...

GeTe-based compounds have been intensively studied recently due to their superior thermoelectric performance, but their real applications are still limited so far due to the drastic volume variation that occurs during the rhombohedral-cubic phase transition, which may break the material or the material/electrode interface during service. Here, supe...

Bi2Te3-based alloys are the most well-known thermoelectric materials for room-temperature application. However, the maximum ZT values of Bi2Te3-based materials are usually achieved near room temperature. The ZT values dramatically drop above 400 K because of material’s intrinsic thermal excitation in Bi2Te3-based materials, which seriously restrict...