T. Stimpel-Lindner

• PhD
• University of the Bundeswehr Munich

The cleaning of silicon (Si) surfaces is a very important issue for the fabrication of novel semiconductor devices on the nanoscale. Established methods for the removal of organic impurities and the native or chemical oxide are often combined with high temperature desorption steps. However, devices with small feature sizes will be unfunctional if,...

Even small traces of carbon monoxide in the fuel gas lead to a degradation of performance in low temperature polymer electrolyte membrane (PEM) fuel cell systems. Therefore a sensor which is capable of detecting CO in a ppm range in a hydrogen rich atmosphere is a great advantage. In this talk a new gas sensitive layer to be used as suspended gate...

Molybdenum dioxide (MoO2) is a layered material which shows promise for a number of applications in the electrochemical energy storage arena. Mostly studied as a bulk layered material, MoO2 has not previously been exfoliated in large quantities. Here we demonstrate liquid phase exfoliation of MoO2 in the solvent isopropanol, yielding reasonable amo...

An experiment was conducted to demonstrate the possibility of embedding C60 fullerenes into a crystalline silicon matrix as well as into an amorphous SiO2 matrix. The samples were typically cut into pieces of 5 × 12 mm2 from commercially available 3'' n(P)-Si(100) wafers with low miscut. After removing silicon residues and particles by cleaning the...

Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide...

Platinum diselenide (PtSe2), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active materi...

Laser-induced graphene (LIG) possesses desirable properties for numerous applications. However, LIG formation on biocompatible substrates is needed to further augment the integration of LIG-based technologies into nanobiotechnology. Here, LIG formation on cross-linked sodium alginate is reported. The LIG is systematically investigated, providing a...

Controllable and reproducible synthesis of 2D materials is crucial for their future applications. Chemical vapor deposition (CVD) promises scalable and high‐quality growth of 2D materials. However, to optimize CVD growth, multiple parameters have to be carefully selected. Design of experiments (DoE) is a consistent and versatile tool to optimize al...

The interest in 2D materials continues to grow across numerous scientific disciplines as compounds with unique electrical, optical, chemical, and thermal characteristics are being discovered. All these properties are governed by an all-surface nature and nanoscale confinement, which can easily be altered by extrinsic influences, such as defects, do...

We report on a controllable and specific functionalisation route for graphene field‐effect transistors (GFETs) for the recognition of small physiologically active molecules. Key element is the noncovalent functionalisation of the graphene surface with perylene bisimide (PBI) molecules directly on the growth substrate. This Functional Layer Transfer...

We report on a controllable and specific functionalisation route for graphene field‐effect transistors (GFETs) for the recognition of small physiologically active molecules. Key element is the noncovalent functionalisation of the graphene surface with perylene bisimide (PBI) molecules directly on the growth substrate. This Functional Layer Transfer...

Minimizing friction and wear is one of the continuing challenges in many mechanical industries. Recent research efforts have been focused on accelerating the antifriction and antiwear properties of hard coatings through the incorporation of self-lubricant materials or the development of new architectures. In this present study, carbon-rich MoC, MoC...

2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low...

Covalent functionalization of two‐dimensional molybdenum disulfide (2D MoS2) holds great promise in developing robust organic‐MoS2 hybrid structures. Herein, for the first time, we demonstrate an approach to building up a bisfunctionalized MoS2 hybrid structure through successively reacting activated MoS2 with alkyl iodide and aryl diazonium salts....

Covalent functionalization of two‐dimensional molybdenum disulfide (2D MoS2) holds great promise in developing robust organic‐MoS2 hybrid structures. Herein, for the first time, we demonstrate an approach to building up a bisfunctionalized MoS2 hybrid structure through successively reacting activated MoS2 with alkyl iodide and aryl diazonium salts....

Non‐covalent functionalization of layered 2D materials is an essential tool to modify and fully harness their optical, electrical, and chemical properties. Herein, a facile method enabling the selective formation of self‐assembled monolayers (SAMs) of perylene bisimide (PBI) on transition metal dichalcogenides (TMDs), directly on the growth substra...

Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe2, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystals down to mono- and few-layers, a range of growth techniques have been established producing material o...

Tungsten ditelluride (WTe2) is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically exfolia...

Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe2, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystals down to mono- and few-layers, a range of growth techniques have been established producing material o...

An approach to controllably engineer the sulfur vacancies of chemically‐exfoliated MoS2 nanosheets using a series of substituted thiophenols in solution was demonstrated in this work. This approach of controlled defect functionalization of 2D MoS2 can encourage further exploration of practical strategies to fulfill scalable production and applicati...

Two‐dimensional (2D) molybdenum disulfide (MoS2) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS2 nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D Mo...

Two-dimensional (2D) molybdenum disulfide (MoS2) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS2 nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D Mo...

Air pollution is a global problem, which poses serious environmental concerns and health risks. In light of this, a key aspect of the challenge of managing air pollution is effective monitoring, which requires reliable high‐sensitivity sensors with strong selectivity and long‐term stability. Layered materials represent an emergent class of material...

Monolayer MoSe2 is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe2 films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) o...

In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe2) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe2 films, a...

Of the gases frequently used during graphene chemical vapour deposition, argon plays no direct chemical role and therefore may be suitable for substitution with the cheaper alternative of nitrogen. The impact of using nitrogen as a carrier gas in methane‐based hot‐wall graphene CVD is investigated using Raman spectroscopy, X‐ray photoelectron spect...

Incorporation of MOFs in interfacially polymerized Thin-Film Nanocomposite (TFN) membranes has widely been shown to result in increased membrane performance. However, the exact functioning of these membranes is poorly understood as large variability in permeance increase, filler incorporation and rejection changes can be observed in literature. The...

Chlorination remains a big hurdle in membrane technology as the most commonly used membranes for water purification consist of a polyamide top-layer, which is not fully resistant towards chlorine-induced oxidation. In this work, DOW FILMTECTM BW30 membrane elements were systematically chlorinated with NaOCl at pilot-scale under acidic conditions (p...

Probing over active area (POAA) is gaining more influence in modern semiconductor production. Because of the existing bonding technology aluminum is still used as last metal layer. Whereas it is assumed that the problems during probing are mainly caused by the native aluminum oxide on the pad surface we will show, that other contaminations must be...

Scanning tunneling microscopy has been used to investigate silicon overgrowth of C60 on the Si(1 0 0)-2 × 1 surface. It can be shown that crystal morphology and quality is highly dependent on temperature and C60 coverage. A C60 coverage of 0.02 ML was used to show the initial stage of silicon overgrowth (1.5 ML of Si), medium stage with crater form...

Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100°C to break NH bonds, which have absorption peaks in the wavelength band important for optical telecommunication. However, silicon clustering appears in...

Not Available

It is well known that boron (B) forms surface phases if deposited on Si surfaces. One interesting phase is the so called root3 x root3-R30degrees boron surface phase (BSP) on Si(111). This surface phase is different from all other root3 x root3-R30degrees surface reconstructions formed by group III atoms because B alone is able to induce this recon...

In this study, the growth of fullerene C60 on Si(1 1 1) surfaces was investigated. Due to the high density of dangling bonds on the Si(1 1 1)-7 ×7 surface and the resulting low-surface mobility of C60, neither the growth of monocrystalline layers of C60 nor a reconstruction of C60 is possible on this surface. Furthermore, during the growth of fulle...

Surface reconstructions of boron (B) on silicon (Si) have been well known for several years. One reconstruction of special interest to us is the so called R30° boron surface phase (BSP) on Si(111). This reconstruction can occur in two different forms, one with B located on T4 lattice sites (B-T4), the second one with B residing in S5 sites (B-S5) d...

It is well known that boron (B) forms two-dimensional superstructures (surface phases) if deposited on clean Si surfaces. One interesting phase is the so-called √3×√3−R30° boron surface phase (BSP) on Si(111). Only a few facts are known about the step-by-step formation of this BSP and the dependence of the formation process on the degree of reconst...

Due to the crystallographic identity of Si and Ge, a very interesting system for the preparation of quantum dot arrays is a Ge deposition on top of a cleaned Si surface. The critical thickness for relaxation of the Ge layer on Si amounts to We will show that the Si(111)–3×3–R30°–B surface phase (BSP), a two-dimensional superlattice of B atoms on to...

We present results obtained by different analysis methods as Scanning-Tunneling-Microscopy (STM), Atomic-Force-Microscopy (AFM), Grazing Incidence Small-angle X-ray Scattering (GISAXS), and Elastic-Recoil-Detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate / Si buffer layer / B layer with σB...

We have studied the interface morphology of a strained and of a relaxed layer system grown on top of a relaxed buffer on a Si(001) substrate. The strain state of the layers was determined by grazing incidence diffraction (GID). Surfaces have been investigated by atomic force microscopy (AFM) and exhibit anisotropies of RMS roughness and lateral cor...

It is known that work function measurements on cleaved metal and metal oxide are strongly influenced by crystal orientation and surface defects. Therefore using metal oxide layers in work function sensors has been considered to be too problematic with regard to reproducibility. This study proves reproducible work function measurements on a first se...