Sukhrob Abdulazhanov

Sukhrob Abdulazhanov
Fraunhofer Institute for Photonic Microsystems IPMS | IPMS · Center Nanoelectronic Technologies (IPMS-CNT)

Master of Science

About

16
Publications
2,225
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47
Citations
Additional affiliations
October 2018 - present
Fraunhofer Institute for Photonic Microsystems IPMS
Position
  • PhD
Description
  • Design and integration of ferroelectric varactors
Education
October 2018 - October 2022
Technische Universität Dresden
Field of study
  • Solid State Electronics
October 2016 - September 2018
Universität Augsburg
Field of study
  • Materials Science
September 2012 - May 2016
Lomonosov Moscow State University
Field of study
  • Materials Science

Publications

Publications (16)
Preprint
div>This paper reports high precision, highly linear MAC operation conducted on 28nm ferroelectric (Fe) FET (FeFET) based 4Kb computing-in-memory (CIM) core with 1FeFET-1T structure. The CIM-macro consists of 4 Kbit ultra-high precision FeFET based synaptic core, ADCs, and peripheral components for data processing. The crossbar array in the synapti...
Article
Full-text available
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorpho...
Article
In this article, we present the capacitance-voltage (C-V) characteristics of HfₓZr₁₋ₓO₂metal-ferroelectric-metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of doping, electric field cycling, and annealing temperature on tuning characteristics (tunability) was analyzed and an optimized b...
Article
Full-text available
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonst...
Article
Full-text available
In this article, we investigate the capacitance–voltage (C–V) characteristics of $$\text {Hf}_{x}\text {Zr}_{1-x}\text {O}_{2}$$ Hf x Zr 1 - x O 2 metal-ferroelectric-metal (MFM) thin-film capacitors with various Zr doping for varactor applications. The impact of field cycling during the wake-up process on the capacitance was analyzed. In addition,...
Cover Page
Full-text available
With the help of transmission Kikuchi diffraction the major physical mechanism of antiferroelectric-like behavior as well as of the wake-up effect is determined by Maximilian Lederer, Konrad Seidel, and co-workers in article number 2100086. Furthermore, guidelines on how to influence this behavior by crystallographic texture and adjacent layers, as...
Conference Paper
The back-end-of-line (BEoL) integration of ferroelectric hafnium zirconium oxide (HZO) has many advantages for applications like non-volatile memories and sensors. Using transmission Kikuchi diffraction (TKD), the influence of process parameters like annealing conditions and Zr content on the microstructure are investigated here. TKD analysis allow...
Conference Paper
In this work, the tuning properties of hafnium zirconium oxide (HZO) metal-ferroelectric-metal (MFM) thin film varactors are investigated. It is shown that varactors with 1:1 Hf:Zr stoichiometry and 10 nm thickness, crystallized with rapid thermal annealing (RTA) at 400°C for 60 s, show a maximum capacitance tunability of 32% at room temperature wi...
Article
Full-text available
Ferroelectric hafnium oxide (HfO2) is considered as a very prospective material for applications in integrated devices, due to its considerably large spontaneous polarization and superior thickness scaling. In fact, the evolution of the ferroelectric hysteresis upon field cycling plays the important role in most applications; especially the so‐call...
Conference Paper
Full-text available
We demonstrate the feasibility of thermal energy recovery in the back end of line (BEoL) employing CMOS-compatible ferroelectric hafnium oxide. Efficient pyroelectric energy harvesting with a sizable power density of 92 mWcm-3 under typical thermal conditions is achieved. Our energy harvesting approach exceeds the efficiency limit of commonly-used...
Conference Paper
We demonstrate the feasibility of thermal energy recovery in the back end of line (BEoL) employing CMOScompatible ferroelectric hafnium oxide. Efficient pyroelectric energy harvesting with a sizable power density of 92 mWcm-3 under typical thermal conditions is achieved. Our energy harvesting approach exceeds the efficiency limit of commonly used t...
Conference Paper
Full-text available
This paper presents a 60 GHz phase shifter, based on a coplanar waveguide (CPW) transmission line, loaded with ferroelectric hafnium zirconium oxide (HZO) variable metal-insulator-metal (MIM) varactors, developed for the back-end-of-line (BEoL) on-chip integration. Using the measured data of capacitance-voltage (C-V) characteristics of HZO and impl...
Conference Paper
Full-text available
This paper presents a tunable 60 GHz band-pass filter, based on a coplanar waveguide (CPW) transmission line, periodically loaded with ferroelectric Hafnium Zirconium Oxide (HZO) variable metal-ferroelectric-metal (MIM) capacitors (varactors), developed for back-end-of-line (BEoL) integration. Derived from the nonlinear capacitance of hafnium zirco...

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Projects

Project (1)
Project
OCEAN12 targets the key societal challenge of smart mobility. Based on the innovative FDSOI technology, OCEAN12 will develop new processors and applications design that leverage Fully Depleted Silicon On Insulator (FD-SOI) technology to offer the industry’s lowest power consuming processor, especially for automotive and aeronautic applications. OCEAN12 will develop a technology platform benefitting from FDSOI design’s extreme low leakage and operating voltage (Vdd) scalability attained thank to reverse and forward body biasing (RBB/FBB) of the integrate circuit and it power system architecture. This high performance, low power solution will enable the next strategic generations of smart vehicles.