Stephen Martin Hudziak

Stephen Martin Hudziak
University College London | UCL · Department of Electronic and Electrical Engineering

Physics BSc

About

27
Publications
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1,023
Citations

Publications

Publications (27)
Article
Full-text available
The aim of the current work is twofold: to demonstrate the application of in situ non-invasive imaging by portable atomic force microscopy (AFM) on the surfaces of a violin and to integrate compositional and mechanical analysis at the nano scale level on model samples of varnished wood. These samples were prepared according to traditional recipes b...
Article
Full-text available
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and diverse functional behaviors. However, understanding t...
Preprint
Full-text available
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and diverse functional behaviours. However, understanding...
Article
Full-text available
Nature-inspired materials hold promise to tackle fouling experienced by membranes. Herein, a systematic approach is taken to explore the relative impact of charge and hydrophilicity on the anti-fouling properties of polyester membranes, both of which appear to play a role in the kidney's remarkable anti-fouling properties. Monofunctional and bifunc...
Article
Full-text available
The atomic force microscope (AFM) empowers research into nanoscale structural and functional material properties. Recently, the scope of application has broadened with the arrival of conductance tomography, a technique for mapping current in three-dimensions in electronic devices by gradually removing sample material with the scanning probe. This t...
Article
Full-text available
Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent plasticity (STDP) is one such behavior, and one e...
Article
Full-text available
This paper describes the application of atomic force microscopy (AFM) for the imaging of collagen denaturation as observed in parchment. Parchment is prepared from processed animal skin and collagen is the main component. Large collections in national archives, libraries and religious institutions contain numerous documents written on parchment. Th...
Article
As flash memory approaches its scaling limit, resistive RAM devices show promise for next generation memories due to their small size and low operating voltages enabling denser packing and lower power consumption. Many materials have shown desirable active layer properties, yet silicon based memories are particularly appealing as they allow for fac...
Article
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and, ultimately, emission of superoxide ions. The results from the fundamental study by A. Mehonic, A. J. Kenyon, and co-workers reported on page 7486 are directly relevant to m...
Article
Resistive RAM (ReRAM) devices have shown promise in delivering the next generation of electronic memories as flash approaches its scaling limit. Their low operating voltages, small sizes and simple structure enable low power consumption and dense device packing. Although many dielectric materials such as transition metal oxides and perovskites have...
Article
As flash memory approaches its scaling limit, resistive RAM (ReRAM) devices are showing promise in providing the next generation of electronic memories. This comes about as a result of their simple structure, small size and low operating voltages, enabling denser device packing and lower power consumption. Many materials have shown desirable proper...
Article
Full-text available
Resistive random access memory (RRAM) is considered an attractive candidate for next generation memory devices due to its competitive scalability, low-power operation and high switching speed. The technology however, still faces several challenges that overall prohibit its industrial translation, such as low yields, large switching variability and...
Article
Full-text available
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and de...
Article
Slow access time, high power dissipation, and a rapidly approaching scaling limit constitute roadblocks for existing nonvolatile flash memory technologies. A new family of storage devices is needed. Filamentary resistive RAM (ReRAM) offers scalability, potentially sub-10 nm, nanosecond write times and a low power profile. Importantly, applications...
Article
Full-text available
We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistanc...
Article
Full-text available
We present an investigation of structural changes in silicon-rich silicon oxide metal-insulator-metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive ato...
Article
Redox-based resistive random access memory (RRAM) has the scope to greatly improve upon current methods of data storage, despite incomplete understandings of material switching mechanisms. We make use of atomic force microscopy (AFM), conductive atomic force microscopy (cAFM) and X-ray photoelectron spectroscopy (XPS) to characterise the physical p...
Article
Full-text available
Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quant...
Article
This paper presents a study of quartz sand grain surface textures using atomic force microscopy (AFM) to image the surface. Until now scanning electron microscopy (SEM) has provided the primary technique used in the forensic surface texture analysis of quartz sand grains as a means of establishing the provenance of the grains for forensic reconstru...
Article
Full-text available
Resistive switching in a metal-free silicon-based material offers a compelling alternative to existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of fabrication and of enhanced device performance. We report a study of resistive switching in devices consisting of non-stoichiometric silicon-rich silicon dioxide thin films....
Article
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We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. In contrast to other work in t...
Article
We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. Both unipolar and bipolar prog...
Article
Full-text available
Cleaved rubrene crystals offer reproducible and unoxidized surfaces ideal for investigation of the environmental dependence of the charge transport properties. Using atomic force microscopy (AFM), we found that the ambient environment induces molecular reorganization on a cleaved rubrene surface. Nanoscale beads and molecular fingers are formed on...
Article
Full-text available
Evolution of the surface morphology and local conductivity on cleaved surfaces of rubrene single crystals is characterized with atomic force microscopy. The cleaved surface was found to exhibit molecular reorganization that results in the formation of nanoscale beads aligned along molecular step edges and fingers, narrow molecular structures, one m...
Article
Full-text available
Diamond offers attractive properties as a material for microelectromechanical chemical sensors but is difficult to process in comparison with silicon. Here a method for attaching detonation-derived nanodiamonds to prefabricated and mounted Si cantilever devices is described. It is shown that this hybrid device has a resonant frequency shifted down,...
Article
Full-text available
DC magnetoresistive effects were observed in above-percolation-threshold loaded Fe-filled carbon nanotube/polyurethane–urea composite samples. A phenomenological model is derived from interpretation of resistance relaxation for a range of axial strains. The large instantaneous magnetoresistance of + 90% observed at low axial strain was a result of...

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