Slawomir Prucnal

Slawomir Prucnal
Helmholtz-Zentrum Dresden-Rossendorf | HZDR

About

166
Publications
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1,672
Citations
Citations since 2016
95 Research Items
1146 Citations
2016201720182019202020212022050100150200
2016201720182019202020212022050100150200
2016201720182019202020212022050100150200
2016201720182019202020212022050100150200

Publications

Publications (166)
Article
Full-text available
Flash lamp annealing (FLA) is a non-equilibrium annealing method on the sub-second time scale which excellently meets the requirements of thin-film processing. FLA has already been used in microelectronics, mostly after ion implantation, to activate dopants, to recrystallize amorphous semiconductor layers, and to anneal out defects. Another field o...
Preprint
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By contr...
Article
Full-text available
Delta doping (δ-doping) can find a wide range of applications in advanced metal oxide semiconductor field effect transistors, deep UV photodetectors, quantum devices, and others. In this work, we formed a δ-doping layer in silicon by employing flash lamp annealing to treat the PCl3 monolayers grafted on silicon surfaces. The δ-doping layer is atomi...
Article
Full-text available
The Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid states reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) meth...
Article
We report a change in the structural and magnetic properties of epitaxial Mn 5 Ge 3 on a Ge-on-Si (111) substrate by applying strain engineering through ms-range flash lamp annealing (FLA). X-ray diffraction results demonstrate that during FLA for 20 ms, the formation of nonmagnetic Mn x Ge y secondary phases is suppressed, while the in-plane expan...
Article
Full-text available
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as f...
Article
In this paper we present an experimental study of SOI UTBB n-MOSFETs at cryogenic temperatures. The device employs fully silicided source/drain with dopant segregation formed by “Implantation Into Silicide” (IIS) process. The impact of the back-gate (Vback) on the device performance is systematically investigated. The results demonstrate that Vback...
Article
The bonding structure of tin oxide (SnOx) films grown by reactive DC magnetron sputtering has been studied by the combination of X-ray diffraction (XRD) and soft X-ray absorption near-edge structure (XANES). The oxygen incorporation in the films has been controlled by the O2 partial pressure (PO2) in the O2/Ar discharge mixture. In addition, the im...
Article
Photogenerated carriers' transfer efficiency as one of the most important criteria determines the efficiency of a photoanode for photoelectrochemical (PEC) water splitting. Energy barrier-free charge transfer of photogenerated carriers is achieved in a core-shell heterostructure of Bi2S3/ZnS:Co/TiO2, in which the arrayed TiO2 nanorods are covered w...
Article
Full-text available
Plasmonic modes in metal structures are of great interest for optical applications. While metals such as Au and Ag are highly suitable for such applications at visible wavelengths, their high Drude losses limit their usefulness at mid-infrared wavelengths. Highly n-doped Ge 1− y Sn y alloys are interesting possible alternative materials for plasmon...
Article
Full-text available
The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching....
Article
Full-text available
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for unders...
Preprint
Full-text available
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stab...
Preprint
Full-text available
Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, whic...
Article
Full-text available
Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, whic...
Article
Full-text available
We report the temperature-dependent magnetic and structural properties of epitaxial Mn5Ge3 thin films grown on Ge substrates. Utilizing density-functional theory (DFT) calculations and various experimental methods, we reveal mechanisms governing the switching between collinear and noncollinear spin configuration in Mn5Ge3. The Mn atoms in Mn5Ge3 oc...
Article
Full-text available
Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 °C is employed to obtain metallic n ⁺⁺-GaAs layers. The electron concentration in annealed GaAs is as high as 5 × 10¹⁹ cm⁻³, which is several times higher than the doping level achievable by alternative methods. We found that heavily doped n ⁺⁺...
Preprint
Full-text available
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for unders...
Article
Full-text available
B20‐type transition‐metal silicides or germanides are noncentrosymmetric materials hosting magnetic skyrmions, which are promising information carriers in spintronic devices. The prerequisite is to prepare thin films on technology‐relevant substrates with magnetic skyrmions stabilized at a broad temperature and magnetic‐field working window. A cano...
Article
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stab...
Article
B20-type FeGe is one of the noncentrosymmetric materials hosting magnetic skymions. In this work, we have prepared B20-type FeGe films by pulsed laser melting of metal Fe deposited on Ge(100). The formation of the B20 phase is confirmed by X-ray diffraction. The FeGe samples show a superparamagnetic behaviour and their blocking temperatures increas...
Article
We show the structural and optical properties of non-polar a -plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5 × 10 ¹³ cm ⁻² to 5 × 10 ¹⁵ cm ⁻² , the n-type dopant concentration gradually increases from 4.6 × 10 ¹⁸ cm ⁻² to 4.5 × 10 ²⁰ cm ⁻² , while the generated vacancy density accordingly raises...
Article
Full-text available
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P...
Preprint
Full-text available
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4...
Article
Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-band-gap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal trans...
Article
Full-text available
Float‐zone (FZ) silicon often has grown‐in defects that are thermally activated in a broad temperature window of ∽300–800°C. These defects cause efficient electron‐hole pair recombination, which deteriorates the bulk minority carrier lifetime and thereby possible photovoltaic conversion efficiencies. Little is known so far about these defects which...
Article
In this work properties of ZnO:N/n‐SiC heterojunctions (HJs) and light emitting diodes based on them are studied. The HJs were grown by Molecular Beam Epitaxy. Active nitrogen generated by the rf plasma source was used for p‐type doping. The location of the space charge area on the ZnO:N/n‐SiC interface was revealed by Electron Beam Induced Current...
Preprint
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystall...
Preprint
Full-text available
Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transi...
Article
In this paper, we present optical, structural and electrical studies of the phenomenon called concentration quenching effect occurring in ZnO doped with Rare Earth (RE) ions. For this purpose, the epitaxial ZnO layers grown by the Atomic Layer Deposition (ALD) are doped by ion implantation with Yb and Er elements with fluencies ranging from 5×10¹³...
Article
Full-text available
Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy,...
Article
Ge:Mn thick films (t≈3 μm) with low average Mn concentration (<0.3%) were prepared by ion implantation at 77 K followed by either conventional or flashlamp annealing. The films were characterized by x-ray diffraction, secondary ion mass spectrometry, magnetometry, and infrared transmission (100–6500 cm−1). Post-annealing at a high enough temperatur...
Article
The impact of Ta incorporation (up to ∼21 at.%) in titanium dioxide (TiO2) films subjected to post-deposition millisecond-range flash-lamp annealing (FLA) is addressed. Phase formation with short-range information was established by means of soft X-ray absorption near-edge structure (XANES) in combination with standard X-ray diffraction. As-grown f...
Chapter
This chapter gives an overview where flash lamp annealing is used in semiconductor applications. After a short introduction to defect engineering several use cases in the field of doping are discussed including ultra-shallow junctions and hyperdoping in silicon, doping and superconductivity in germanium, silicon carbide, III–V semiconductors, and d...
Chapter
This chapter gives a brief overview about flash lamp annealing of non-semiconductor materials, although the line to semiconductors is flexible. The first section is devoted to dielectric thin films with the focus on high-k materials and rare earth doping of silicon dioxide. The next section discusses the use of flash lamp annealing for monocrystall...
Article
Full-text available
In this paper, we report on the phase selectivity in Cr and N co-doped TiO2 (TiO2:Cr,N) sputtered films by means of interface engineering. In particular, monolithic TiO2:Cr,N films produced by continuous growth conditions result in the formation of a mixed-phase oxide with dominant rutile character. On the contrary, modulated growth by starting wit...
Article
The intentional merging of epitaxial Ge on Si(001) quantum dots with optically active defect‐sites promises low‐cost applications as room temperature (RT) light‐emitters in Si photonics. Despite recent progress in this field, important benchmarks, e.g. the thermal stability of such a combination of low dimensional nano‐systems, as well as curing of...
Article
Full-text available
Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-generation nanoelectronics that can be fully integrated with silicon technology. To this day, the fabrication of Ge-based transistors with a n-type channel doping above 5 × 10¹⁹ cm⁻³ remains challenging. Here, we report on n-type doping of Ge beyond the equilibrium so...
Article
Full-text available
The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy. The n-typ...
Article
Full-text available
n-type doping in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we demonstrate that doping Si with the deep chalcogen donor Te by nonequilibrium processing can exceed this limit and yield higher electron concentrations. In contrast...
Article
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron-doped diamond and Si, superconductivity has been observed in gallium-doped Ge; however, the obtained specimen is in polycrystalline form [Phys. Rev. Lett. 102, 217003 (2009)]. Here we present super...
Article
Full-text available
Si hyperdoped with chalcogens (S,Se,Te) is well known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-band-gap absorption. These properties are expected to be sensitive to a postsynthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fa...
Preprint
Full-text available
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsd\"orfer et al., Phys. Rev. Lett. 102, 217003 (2009...
Article
Crystalline β-Ga 2 O 3 thin films on (100)- and (111)-oriented Si substrates are produced by pulsed laser deposition. The as-deposited thin films are demonstrated to be polycrystalline and contain a slight deficit of oxygen atoms as measured by x-ray diffraction spectroscopy and Rutherford backscattering spectrometry, respectively. The crystallogra...
Preprint
Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-...
Article
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal‐oxide‐semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn...
Article
Full-text available
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge−Sn alloys. The heavily doped n-type Ge−Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type G...
Article
Full-text available
Mn5Ge3 thin films have been demonstrated as promising spin-injector materials for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter, we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction betwee...
Article
Full-text available
In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with random...
Article
Full-text available
The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconduct...
Preprint
Full-text available
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction betwee...
Preprint
Full-text available
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the self-compensation via defect complexes at high impurity concentration. Here we demonstrate that doping with the chalcogen Te, a deep double donor, can break this limit and yield higher electron concentration in Si. Contrary to general expectation...
Article
Full-text available
A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp anneal...
Article
Full-text available
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially re...
Preprint
We report on the experimental observation and theoretical studies of a self-assembled Fe-rich (In,Fe)As nano-lamellar structure that is driven by anisotropic spinodal phase separation at the growth front during laser heating-induced recrystallization of Fe-implanted InAs. Pseudomorphically embedded in the InAs lattice, those Fe-rich nano-lamellae a...
Article
We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline lattice recovery of the implanted layers and the Se sub-stitutional fraction depend on the pulse duration and energy density of the flash. While the annealing at low energy densities leads t...
Article
Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural...
Article
The time-resolved oxygen exchange rate of strontium titanate (SrTiO3) single crystals is studied by means of oxygen solid electrolyte coulometry (OSEC) and compared to model calculations. Experiments are performed on pure, ion implanted (Ni, Ag, O and N ions) and partially covered crystals with silver layer. In this work, a theoretical model is use...
Article
Full-text available
Hyperdoped silicon with deep level impurities has attracted much research interest due to its promising optical and electrical properties. In this work, single crystalline silicon supersaturated with titanium is fabricated by ion implantation followed by both pulsed laser melting and flash lamp annealing. The decrease of sheet resistance with incre...
Article
Full-text available
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands. Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an...
Article
Epitaxial ZnO thin films grown by atomic layer deposition on GaN/Al2O3 substrates are implanted with Yb, Dy, and Pr ions to a fluence of 5 × 10¹⁴ at cm⁻² and subsequently anneals at 800 °C using a rapid thermal annealing (RTA) system. Structural properties of implanted and annealed ZnO films and the optical response are evaluated by channeling Ruth...
Article
Full-text available
In this paper, we analyze the correlation of the magnetism and the carrier concentration with the shift of the spectroscopic critical points for low compensated GaMnAs samples with a high Curie temperature of around 150 K. The GaMnAs layers were grown by low-temperature molecular beam epitaxy. The low-temperature annealing leads to a reduction of M...
Article
Defect agglomeration in ion‐implanted compound semiconductors produces lattice stress eventually causing plastic deformation at sufficiently high fluence. Consequently, a dislocations tangle is formed which can hardly be completely removed by thermal annealing. To solve this problem, a new method of sequential processing has been developed consisti...
Article
Ge was deposited on silicon as a superlattice with 10 layers of Ge embedded in Si3N4 or ZrO2 matrices via plasma enhanced chemical vapor deposition or RF-sputtering, respectively. Raman spectroscopy, transmission electron microscopy and capacitance-voltage (CV) measurements were performed in order to investigate the structural and electrical proper...