Sarah Riazimehr

Sarah Riazimehr
RWTH Aachen University · Fakultät für Elektrotechnik und Informationstechnik

About

14
Publications
4,040
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
677
Citations
Introduction
Sarah Riazimehr currently works at the Fakultät für Elektrotechnik und Informationstechnik, RWTH Aachen University. Sarah does research in Optical Engineering, Electronic Engineering and Optics. Their most recent publication is 'High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes'
Additional affiliations
June 2013 - February 2017
Universität Siegen
Position
  • PhD Student

Publications

Publications (14)
Article
Full-text available
Heterostructures of 2D and 3D materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, a method to analyze measured capacitance–voltage (C–V) data of G/Si Schottky diodes connected in parall...
Preprint
Full-text available
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage dat...
Article
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to experiment...
Preprint
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to exper...
Article
Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-metal transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes ha...
Article
Full-text available
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO2)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurr...
Article
Full-text available
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. However, the origin of the observed high photocurrents in such devices is not entirely clear. In the present work, we investigate G/n-Si Schottky junction diodes in detail by...
Article
Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 {\d...
Article
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition...
Conference Paper
Full-text available
In this work, we present the fabrication and characterisation of graphene photodiodes and transfer length method structures. Graphene is grown using a thermal chemical vapor deposition process on copper foils and subsequently transferred onto silicon-dioxide/silicon substrate. Photodiodes are fabricated on both n-type silicon and p-type silicon are...
Article
Full-text available
We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS 2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS 2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity wh...

Questions

Questions (2)
Question
is it possible to sputter etch Si with Argon? Does anyone have a recipe for starting point?
Question
I am trying to etch Si with DRIE tool. I should etch it only for less than 700nm. I also need to have have rough surface. Any recommendations to increase the surface roughness?