Sandeep Dhariwal

Sandeep Dhariwal
Alliance University · Department of Electronics and Communications Engineering

PhD

About

39
Publications
14,718
Reads
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98
Citations

Publications

Publications (39)
Article
In this paper, Gated Vdd and MTCMOS techniques are proposed to get low power from the simulated SRAM cells considering 4T, 5T and 6T circuits based on CMOS logic. In the present time, huge evolutions have been made in the field of electronics embedded with memory technology for organized working. Out of many memory cells, the most popular is MOS ba...
Article
This research article provides proposed designs of hybrid and GDI-based full adders with better performance parameters, such as power dissipation, propagation delay, and power delay product. Performance analysis of the existing designs and proposed designs are carried out for one-bit full adder using industry standard Cadence tool, Virtuoso at 45nm...
Article
Full-text available
In the era of digital signal processing, such as graphics and computation systems, multiplication is one of the prime operations. A multiplier is a key component in any kind of digital system such as Multiply-Accumulate (MAC) unit, various FFT algorithms, etc. The efficiency of a multiplier is mainly dependent upon the speed of operation and power...
Article
With the development and an increasing interest in flexible electronics for different applications, a patch antenna has been designed and fabricated using carbon nano tube-polymer ink on fabrics. The antenna has been fabricated on cotton and songket fabric which have permittivity of ϵr ≈ 1.5, and 1.6, respectively. The thickness of the fabric subst...
Article
Full-text available
Among various network exploits that exist today in the ever progressing age of Information Technology and Communications, MiTM attacks have been identified as the critical assaults being used for breaching client security. These assaults are primarily encountered in wireless networks in the form of ARP Poisoning attacks. Thus it becomes important t...
Article
Full-text available
This research paper is based on various comparative analysis on precise and wide tuning Voltage Controlled Oscillators (VCO) with minimum phase noise and power consumption, using an active inductor tank circuit for Phase Locked Loop (PLL) based frequency synthesizer to support Zigbee wireless LAN standard, operating on 2.4 GHz ISM band (Industrial,...
Article
Full-text available
An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has als...
Article
Full-text available
Objective: This research paper presents a review on performance comparison of different types of Voltage Controlled Oscillators to analyze power dissipation and frequency response. Methods: Designs from Ring Oscillator, Current Starved VCO, VCO with gates of PMOS transistors grounded, VCO with PMOS transistors as diode connected load, VCO with Sour...
Article
Full-text available
In this paper, rectangular and circular shape antennas are designed for analyzing the performance characteristics of an antenna. Semiconducting Carbon Nanotube (CNT), Metallic Carbon Nanotube (MCNT), Copper and Graphene are considered as the patch materials. There are different parameters but conductivity has been taken to differentiate between the...
Article
In wireless communication security is the main issue due to the wireless media and as intruders, hackers or attackers are increasing day by day. So, we need a system that must give the guarantee of security. As day by day digitalization is increasing in every application and so that the speed of processors are increasing. So, to fulfill the demand...
Article
Full-text available
In this paper, high-performance poly-Si TFT with ZrTiO4 as gate dielectric material under optimized MILC silicide material has been analyzed. The EOT of the dielectric use is 4.1 nm. The electrical performance of this setup attained a low value for threshold voltage of -2 V and a steep SS of 1.70E+00 V/dec. These properties thus obtained pose to be...
Article
Full-text available
Built in self test (BIST), as the name reveals, is an on board testing technique employed for testing of Very Large Scale Integration (VLSI) circuits using the circuit components itself. BIST has emerged as good solution to the VLSI test environment eliminating the use of expensive external automatic test equipment (ATE) for testing the circuit. In...
Article
The full adder circuit is the major cell in many processing Systems. The full adder is used to add the partial products of multipliers. Decreasing the number of transistor count in full adder can result in the less power consumption. In this paper different types of full adders has been implemented by using cadence virtuoso 180nm and 90nm technolog...
Article
Fingerprints are a great basis for identification of persons. Fingerprint recognition is one of oldest procedures of biometric identification. However outcome a good fingerprint image is not always easy. So a fingerprint image must be pre-processed before matching. The objective of this paper is to present animproved and enhanced fingerprint image....
Article
In this article, transport properties of a single-wall carbon nanotube having chirality (4, 0), connected to copper, gold and graphene electrodes, have been investigated. Electronic structures have been analyzed using the density functional theory calculator. Transport properties of the devices formed by interfacing of single-wall carbon nanotube a...
Conference Paper
With a development and an increasing interest in flexible electronics, for civil, medical, space, and military domains, we present a design of a patch antenna using CNT-polymer ink on fabrics. We have prepared CNT ink, and measured its properties to use as a conducting material for making patches. The antenna is designed on cotton and Songket fabri...
Article
In this paper we have studied the properties of CNT as interconnects and calculated the parameters to analyse our results through table and plots. Due to their excellent electrical properties and small size, metallic carbon nanotubes (CNTs) are promising materials for interconnect wires in future integrated circuits. Simulations have firmly establi...
Article
Reported presently is an approach to determine the effect of different parameters on the performance of electrothermal microtweezers. Selection of actuation parameters has great influence on the response of the microtweezers. The present study investigates the influence of the actuation parameters on the response of microtweezers based on Taguchi m...
Article
Full-text available
Mobile Ad hoc Network is a collection of wireless mobile nodes dynamically forming a temporary network without the aid of any established infrastructure or centralized administration. Routing protocols in mobile ad hoc network helps node to send and receive packets. In this paper we are doing study of AODV, DSR (Reactive), and OLSR, DSDV, TORA (Pro...
Conference Paper
Transmission Control Protocol (TCP) is a connection oriented protocol for reliable end-to-end data delivery over IP networks. TCP is unable to distinguish between packet losses induced by network congestion and wireless packet losses. TCP assume every packet loss or delay due to congestion. Wireless Mobile Ad-hoc networks offer challenges to TCP co...
Article
This paper investigates the effects of the interface positions of SWCNT on the electronic transport features of gold-nanotube-gold systems having SWCNT chirality (4,0). The transport properties of finite, defect-free zigzag single-walled carbon nanotubes attached to Au(111) metallic contacts have been calculated by means of NEGF approach with the T...
Article
This paper discusses 6T, 5T & 4T memory cells asymmetric configuration. Six transistor (6T) SRAM Cells are the main choice for today’s cache applications. The static noise margin of 6T SRAM cell is highest in all memory cells, so the stability is highest in this cell. Simulation is carried out using tSPICE 7.1v with process technology of 0.18 µm. D...

Questions

Question (1)
Question
In research papers, there are different designs that can replace single gate TFET, among them which one is the best for fast switching operation.

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