S. A. Kukushkin

Institute of Problems of Mechanical Engineering (RAS) · Laboratory of Structural and Phase Transitions in Condensed Matter

The review presents systematization and analysis of experimental data on nanoindentation (NI) of a whole class of new materials – wide-gap AlN, GaN, AlGaN and β-Ga2O3 heterostructures formed on a hybrid substrate of a new SiC/Si type, which were synthesized by the method of coordinated atom substitution. The deformational and mechanical properties...

This study focuses on providing a detailed microscopic description of the chemical transformation of a silicon crystal into a silicon carbide crystal through reaction with carbon monoxide gas on the (111) surface. To achieve this, we utilized the density functional theory in the spin-polarized PBE approximation. By employing the NEB method, we succ...

We present the results of fabrication of flip-chip LEDs with removed substrate from AlInGaN heterostructures grown on SiC/Si substrates synthesized by vacancy-matching atom substitution. It is shown that SiC/Si substrates are optimal from the viewpoint of matching lattice parameters, thermal conductivity, and optical characteristics of the material...

The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the f...

For the first time, a multilayer heterostructure consisting of periodically arranged GaN and AlN layers was formed by chloride-hydride gas-phase epitaxy on a SiC/Si hybrid substrate synthesised by the method of coordinated atom substitution. To level the difference in lattice parameters and thermal expansion coefficients between the epitaxial layer...

The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon...

Problems of the growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on hybrid substrates involving porous silicon and silicon carbide layers by molecular beam epitaxy technique with plasma-activated nitrogen are discussed in this study. The epitaxial growth of nanoscale columnar AlxGa1-xN/AlN heterostructure is shown to be specified by the...

For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due...

The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the f...

The article presents the results of measurement and analysis of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon by the method of the coordinated substitution of atoms. In weak magnetic fields, the occurrence of two quantum effects at room temper...

In this work, monocrystalline films of silicon carbide were synthesized on the surface of a Si(100) silicon wafer using the method of coordinated substitution of atoms. The films were synthesized at temperatures of 1200 °C and 1300 °C for 20 minutes in a CO gas flow at a pressure of 0.8 Pa. The effect of 1200–1300 °C temperatures on the formation o...

In this article, the mechanical and deformation characteristics of epitaxial films of AlGaN solid solutions formed on silicon substrates of crystallographic orientations (001), (011) and (111) with a silicon carbide (SiC/Si) buffer layer synthesized by the method of the coordinated substitution of atoms were studied using the nanoindentation method...

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers...

In the article, using the example of growing aluminum nitride (AlN) on (110) orientation silicon (Si) with a silicon carbide (SiC) buffer layer, a method for growing a new type of substrates is developed which makes it possible to obtain mechanically unstressed semiconductor heterostructures. A specific feature of the synthesis of this kind of subs...

Sequential stages of synthesis of SiC epitaxial films on n- and p-type Si(111) substrates in a mixture of carbon monoxide and silane are studied by X-ray diffraction (XRD) and Raman scattering methods. It was found that the elastic strain in SiC films grown on n-type Si(111) is absent in contrast to SiC films grown on p-type Si(111), where the defo...

Sequential stages of synthesis of SiC epitaxial films on n- and p-type Si(111) substrates in a mixture of carbon monoxide and silane are studied by X-ray diffraction (XRD) and Raman scattering methods. It was found that the elastic strain in SiC films grown on n-type Si(111) is absent in contrast to SiC films grown on p-type Si(111), where the defo...

A technique is proposed for the formation of epitaxial films of silicon carbide, gallium and aluminum nitrides on the surface of non-planar silicon parts. Using the technique, a GaN/AlN/SiC/Si heterostructure was grown on the surface of a silicon ring. The samples were studied by scanning electron microscopy, as well as raman and energy dispersive...

The process of growth of a multicomponent crystal at elevated supersaturations, in cases where the classical approximation of the immobility of atomic steps becomes incorrect, has been studied. Analytical expressions are derived that describe the rate of advancement of an ensemble of steps on a crystalline surface. The crystal growth rate is determ...

The thermal characteristics of SiC/Si samples obtained by the method of coordinated substitution of atoms at different thicknesses of SiC have been experimentally investigated. It has been found that for SiC thicknesses less than 200 nm, the thermal resistance of SiC/Si is approximately equal to 2 K/W, which coincides with a pure silicon substrate....

We present the results of fabrication of flip-chip LED chips with removed substrate from AlInGaN heterostructures grown on SiC/Si substrates synthesized by vacancy-matching atom substitution. It is shown that SiC/Si substrates are optimal from the viewpoint of coordinated lattice parameters, thermal conductivity, and optical characteristics of the...

The three main crystalline modifications of Ga2O3, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-pha...

При проведении экспериментов по синтезу слоев карбида кремния на монокристаллических подложках кремния с помощью метода согласованного замещения атомов обнаружено, что образование тонких пленок карбида кремния может сопровождаться формированием массивов нанотрубок карбида кремния произрастающих в глубь кремниевых подложек. Таким образом, впервые об...

This review covers studies dedicated to the search for and development of sorbents for the extraction of the caesium-137. The review analyses a new method for growing SiC epitaxial films on Si, which is based on the coordinated substitution of some silicon atoms in the Si crystal lattice with carbon atoms. The main idea and theory of the new method...

In the present work, a new method of growing layers of three main crystal modifications of Ga2O3, namely α-phase, ε-phase, and β-phase, with thickness of 1 µm or more was developed. The method is based on the use of two approaches, namely a combination of Ga2O3 growth using the hydride vapor-phase epitaxy (HVPE) method and the use of a silicon crys...

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitutio...

In this work, silicon carbide layers containing silicon vacancies are grown by the Method of Coordinated Substitution of Atoms (MCSA). The main idea of this fundamentally new method is that silicon vacancies are first created in silicon, which is much simpler, and only then is silicon converted into silicon carbide by chemical reaction with carbon...

In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid s...

The process of growth of faceted pores in a crystal under the influence of an applied mechanical load is considered in the framework of the classical Barton-Cabrera-Frank model, taking into account the presence of adatoms on the surface of pore faces. The growth is caused by the flow of excess vacancies from the bulk of the crystal, which arise due...

This work presents the results of a comparative study of dielectric and pyroelectric properties of aluminum nitride (AlN) single-layer and multilayer samples with a thickness of 100 ÷ 200 μm grown in the [0001] direction by chloride-hydride epitaxy. A silicon wafer covered by silicon carbide nanolayer grown by solid-phase substitution (SiC/(111)Si)...

The review provides a short list of the latest scientific achievements of the Laboratory of Structural and Phase Transformations in Condensed Matter, Institute for Problems in Mechanical Engineering (IPME RAS). We present the results on the developed growth method of thin silicon carbide films on silicon by coordinated atomic substitution, the prop...

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretica...

The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000C). On substrates with orientations (110) and (111), the formation of InGaN nanocrystals was observed. The...

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and...

The microstructure and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic AlxGa1-xN layers of different composition located perpendicular...

Temperature dependences of the longitudinal resistance and heat capacity of silicon carbide epitaxial films grown on monocrystalline silicon substrates by the method of coordinated substitution of atoms are investigated. Peculiarities in the behavior of these dependences have been found at temperatures equal to 56°C, 76°C, 122°C and 130°C. The obse...

The nucleation mechanism of aluminum nitride films grown by the method ofhydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) istheoretically analyzed. The temperature regions and vapor pressure regionsof components are determined in which the island growth mechanism and thelayer-by-layer growth mechanism are realized. The theoretical co...

X-ray diffraction and total external reflection of X-rays(X-ray reflectometry) methods were used to study the successivestages of synthesis of epitaxial SiC films on Si (100) X-raydiffraction and total external X-ray reflection (XRD) methods wereused to study successive stages of synthesis of epitaxial SiC films on Si(100) surfaces, (110) and (111)...

The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000 o C). On substrates with orientations (110) and (111), the formation of InGaN whisker nanocrystals was ob...

The properties of the interface between Si(111) and 3C-SiC(111) grown by the method of coordinated substitution of atoms were studied by the density functional theory in spin-polarized approximation. The most favourable atomic configuration at the interface was found. It is shown that SiC faces Si with the carbon plane, and SiC separates 3 Si atoms...

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and...

The microstructure and pyroelectric properties of Al x Ga 1-x N composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic Al x Ga 1-x N layers of different composition located perpe...

For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due...

The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the f...

We carried out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate ha...

The properties of the interface between Si(111) and 3C-SiC(111) grown by the method of coordinated substitution of atoms were studied by the density functional theory in spin-polarized approximation. The most favourable atomic configuration at the interface was found. It is shown that SiC faces Si with the carbon plane, and SiC separates 3 Si atoms...

In this work, InGaN nanowires with a high In content were grown, for the first time on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN...

We studied the interaction of molten Si and graphite surface during annealing in different atmospheres (CO, vacuum, Ar). The studies have shown that during annealing in CO atmosphere a composite material of SiC and graphite in a thick subsurface layer of the graphite is being formed, whereas at vacuum and Ar atmosphere the modified layer is either...

Elastic properties of porous silicon layer of hybrid SiC/Si substrates grown by the atomic substitution method are investigated. The feature of the growth method is the formation of the macroporous silicon layer at the SiC/Si interface during growth. The elastic properties of the layer are studied using the finite element method. The biaxial modulu...

In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and on...

A modified technique for the growth of silicon carbide from silicon by the method of self-consistent substitution of atoms is proposed, which makes it possible to increase the achievable thickness of the formed silicon carbide layer by about an order of magnitude. The technique includes an additional step before the growth process: the surface of t...

A method for the synthesis of silicon carbide–graphite composite coatings is proposed and described. The method is based on the two simultaneous chemical reactions involving graphite. One of these reactions consists of the chemical interaction of a silicon molten mass with carbon monoxide on the surface of the graphite at a temperature slightly exc...

This paper presents an experimental study of structural and mechanical characteristics of thin films of AlN, GaN, and AlGaN grown on hybrid SiC/Si substrates by the method of HVPE. The surface roughness of the films and substrates has been measured. The thickness and molecular composition of the films have been determined by spectral ellipsometry....

The results of the dielectric, pyroelectric, and piezoelectric studies of aluminum nitride single crystals are presented in this paper. The crystals were grown by sublimation and hybrid-chloride vapor phase epitaxy, which provided high growth rates, large sizes, and the ability to reduce structural defects. The pyroelectric effect measurements by a...

В работе рассмотрена эволюция поверхности кристаллов и тонких пленок под воздействием потока частиц и механической нагрузки. Возникновение неустойчивости на плоской поверхности кристалла может быть вызвано наличием вакансий в объеме кристалла, которые диффундируют к поверхности кристалла или к микропорам в его объеме. Показано, что описанный эффект...

Self‐catalyzed GaAs nanowire growth via the vapor‐liquid‐solid mechanism is investigated by a theoretical model including the kinetics of material transport inside the catalyst droplet. The proposed model allows the description of nucleation and growth of two‐dimensional islands on the top facet of GaAs nanowires. Analytical expressions for the gro...

Выполнен цикл экспериментальных исследований, а именно, проведены измерения и выполнен анализ полевых зависимостей статической магнитной восприимчивости в образцах тонких пленок монокристаллического SiC, выращенных на поверхностях (100), (110) и (111) монокристаллического Si методом согласованного замещения атомов за счет химической реакции Si с га...

Using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer (EDS), the phenomenon of self-organized change in the composition of AlxGa1-xN epitaxial layers during their growth by chloride-hydride epitaxy (EDX) on SiC / Si (111) hybrid substrates was revealed. It was found that during the growth of AlxGa1-xN l...

The microstructure, dielectric, and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC / (111) Si substrates by chloride-hydride epitaxy are studied. In the process of layer growth, the phenomenon of spontaneous formation of heterojunctions was discovered. Based on AlxGa1-xN epitaxial layers, a material has been obtained w...

Light emitting III-N heterostructures were grown by metalorganic chemical vapor deposition on the SiC/Si (111) templates (substrates) formed by the method of matched substitution of atoms. Investigations of the optical and structural properties of heterostructures were carried out in order to reveal the formation of defects in the structures. It is...

The technique and technology for fabricating both LED chips and packaged LEDs based on InGaN/GaN heterostructures grown on novel SiC/Si substrates synthesized by the method of matched atomic substitution have been described. The current-voltage characteristics, luminescence spectra, and the current dependences of output power and external quantum e...

The mechanical properties of composite coatings made of silicon carbide on graphite are studied for the first time. For the deposition of coatings, a new method of annealing the initial graphite was used, which was in contact with a silicon melt in an atmosphere of carbon monoxide.The samples were studied by nanoindentation and scanning electron mi...

The response to external terahertz (THz) radiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the fra...

The growth of an arbitrary multicomponent non-Kossel crystal via the Burton-Cabrera-Frank mechanism is studied, considering the effect of advacancies and their recombination with adatoms on the surface. An analysis is carried out for two cases: growth due to vapours and growth due to chemical reactions. The analytical expressions are found for the...

In this work, InGaN nanowires with a high In content were grown, for the first time, on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGa...

For the first time, electroluminescence was discovered in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induc...

A group-theoretical analysis of solid solutions of indium and gallium nitrides InxGa1-xN was carried out, and all the main symmetry groups were found for these solutions with the initial hexagonal structure. The thermodynamic potentials of the main phases with different compositions x are calculated using the density functional theory. It is shown...