Rupam Goswami

Rupam Goswami
Tezpur University · Department of Electronics and Communication Engineering

PhD in Semiconductor Devices

About

55
Publications
6,689
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
448
Citations
Citations since 2016
47 Research Items
445 Citations
2016201720182019202020212022050100150
2016201720182019202020212022050100150
2016201720182019202020212022050100150
2016201720182019202020212022050100150
Introduction
Currently working on Tunnel Field Effect Transistors: simulation and analytical modelling and consumer electronics and innovation. Research Interests: MOSFET, Sentaurus TCAD based mixed design, FinFET, memristor, conductive ink, etc.
Additional affiliations
February 2020 - present
Tezpur University
Position
  • Professor (Assistant)
Description
  • Teaching and academics.
August 2018 - February 2020
Birla Institute of Technology and Science Pilani
Position
  • Professor (Assistant)
Description
  • Teaching and administrative works.
July 2017 - July 2018
KIIT University
Position
  • Professor (Assistant)
Description
  • Teaching, academics and administrative works.

Publications

Publications (55)
Article
Full-text available
Junctionless transistor (JLT) which does not have a PN junction in the source-channel-drain path, is reported to have a lower OFF-state current and therefore is more scalable to lower channel lengths compared to a conventional MOSFET, moreover a JLT also offers easy fabrication steps. Tunnel FET (TFET) provides a theoretically possible limit of sub...
Article
In this paper, the electrical parameters are evaluated for the variations of temperature in Gate Overlap Ge source Step Shape Double Gate TFET (GO-Ge-SSDG-TFET) under the impact of interface trap charges (ITCs). Here, the effect of positive ITC (PITC) and negative ITC (NITC) with wide variation in trap concentrations along with variation in tempera...
Article
In this work, the performance evaluation of a dual stack hetero-gated pocket modulated tunnel FET (DSHGPM-TFET) based biosensor is presented. In the proposed device, cavity is formed by etching a portion of gate metal on both side of channel. The device contains a Si1-xGex pocket buried in the source region, where x (Ge mole fraction) is varied and...
Article
Full-text available
This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (tepi) and doping concentra...
Article
This article reports an architecture of a silicon-on-insulator (SOI) tunnel field effect transistor (TFET) possessing an n-p-n body, where the two p-n junctions serve as the primary tunneling sites. The p-type source region is elevated allowing two gate structures to modulate the bands over the two junctions, thus forming a double gate structure. T...
Conference Paper
Junctionless transistor (JLT) is known for improved short channel effects (SCE) and hence better scalability, and high temperature advantages, in addition that it offers more convenient fabrication steps. A Tunnel Field Effect Transistor (TFET) offers theoretically possible limit of subthreshold swing (SS) and has applicability for low power electr...
Article
This paper investigates the comparative study of electrical noise analysis of heterojunction tunnel-field-effect-transistors with L-shaped gate (LTFET) and T-shaped gate (TTFET) using numerical simulations. The effect of different noise components on both structures have been investigated at low frequency (LF) and high frequency (HF) to check the v...
Article
This article reports the response of a silicon-on-insulator (SOI) TFET to the presence of semiconductor/ gate dielectric interface traps. A systematic strategy is designed keeping in view different parameters which are related to the gate of the device. Acceptor-like traps, and donor-like traps with Gaussian distribution are considered at the said...
Article
Full-text available
Consistent research on Tunnel Field Effect Transistors (TFETs) has led to the lookout for their viability in biosensing. The dependence of the tunneling probability on the gate dielectric constant of TFETs makes them ideal for the exploration of biomolecule sensing using modulation of the gate dielectric constant. Although numerous architectures of...
Article
Full-text available
Due to better scalability and more immunity to short channel effects in recent technology nodes, Quadruple gate FinFET is introduced as a potential candidate among multiple gate FET devices. This article presents an investigation of the impact of gate dielectric constant on DC electrical parameters in Quadruple gate FinFET. Drive current (Ids), lea...
Chapter
This article presents a real-time early flood monitoring cum warning system in flood-prone areas. The proposed system comprises of three chief constituents, namely sensor network, computing/transmission unit, and database/application server. The real-time information of water conditions is supervised remotely via a wireless sensor network. The data...
Article
In this paper, the effect of ferroelectric layer thickness (tFE), coercive field (Ec), remnant polarization (Pr), and saturation polarization (Ps) on transfer characteristic is highlighted for a Ferroelectric Tunnel FET (Fe-TFET) through a commercial TCAD simulator. Further, we have reported the RF/analog parameters like transconductance (gm), outp...
Article
Full-text available
In this article, a Ge-source is employed in split drain Z-shaped line TFET structure (SD-ZHP-TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the tunnel width at interface of channel–drain, which reduces the ambipolar current (IAMB). Also, the horizontal pocket at source region and the Ge-source boost the ON current (...
Article
A linear regression-based method for extracting the threshold voltage of tunnel field-effect transistors (TFETs) is presented. The minimum tunneling width at the threshold voltage of a TFET is expressed as a linear function of tunneling widths corresponding to gate voltages. The regression is carried out using known simulated TFETs and verified on...
Preprint
Full-text available
This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (t epi ) and doping concent...
Article
Full-text available
The diffusion of doping concentration in source/drain regions through ion implantation technique extents to the channel, which decreases the inversion portion of channel and results in variation of device behavior. In this paper, by merging the advantages of Ge‐source TFET and dual material gate (DMG) TFET, a new device named as Ge‐source dual mate...
Article
This article proposes a generic approach for modelling threshold voltage of oxide thin film transistors (TFTs). Threshold voltage has always been ambiguous in TFTs due to the disordered nature of semiconducting thin films, and in operation in accumulation mode. This differs from the situation with metal oxide field-effect transistors (MOSFETs), whe...
Chapter
This chapter addresses the design, experiment and prospects of an electronic sensing system to determine the protein content in common food items, chicken egg albumin, milk and protein blend. Different sensitivity parameters along with their extraction mechanisms are presented. The chapter orients the application of memristive behavior towards the...
Article
Full-text available
This paper presents a method-based investigation on the application of low dimensional materials like graphene, carbon nanotube (CNT), transition metal dichalcogenides (TMDCs) in tunnel field effect transistors (TFETs) for high on-current requirements. Three multi-criteria decision making methods (MCDM) are employed to arrive at a consensus on the...
Article
This article presents a novel voltage-programmed pixel circuit using a-IGZO TFTs to effectively compensate threshold voltage (VTH) variations of driving TFT. The compensation is very important to maintain the pixel brightness of active-matrix organic light-emitting diodes (AMOLED) displays. The proposed pixel design uses four-phase clocking schemes...
Book
This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intende...
Article
This article presents a simulation study of the impact of variation in temperature on the transfer characteristics and the RF/analog performance like transconductance (g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ), gate capacitance (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xm...
Article
Full-text available
This paper reports a method to suppress the ambipolar effect and enhance the on-state current in Tunnel Field Effect Transistor by exploiting the advantages of Silicon-Germanium (SiGe). The optimum hetero-dielectric device architecture is proposed with highly doped SiGe pocket at source-channel junction. Further, a detailed investigation in both st...
Article
Full-text available
The ever-growing demand for high speed, power-efficient and low voltage circuits used in analog to digital converters (ADCs) is driving advancements aimed at increasing power efficiency and speed of dynamic regenerative comparators. This paper proposes a power-efficient, high speed, and low voltage dynamic comparator. The comparator consisting of t...
Article
Full-text available
This article proposes a calibrated methodology as well as computational analyses for designing an explosive sensor for trinitrotoluene (TNT) detection using ion-sensitive field-effect transistor (ISFET) through technology computer-aided design (TCAD) tools. Although industrial device simulators are quite efficient in computing the various electrica...
Article
This paper proposes a device incorporating ferroelectric tunnel junction which analyzes the concept of tunneling across a silicon doped hafnium oxide ferroelectric. Variation of electrical parameters with ferroelectric thickness has been examined. Subthreshold swing (SS) of 40 mV/dec has been achieved with ferroelectric thickness of 2 nm. An increa...
Article
This paper compares circular gate (CG) tunnel field effect transistor (TFET) and uniform gate Heterojunction (HJ) TFET as label-free biosensors based on dielectric modulation. Neutral and charged biomolecules with different values of dielectric constant are considered. Sensitivities of partially filled nanogaps arising out of steric hindrance in bo...
Article
In this paper, we propose an algorithm to extract threshold voltage in homojunction tunnel field effect transistors (TFETs). Single gate TFET and double gate TFET are the geometries which are considered for verification of the method. Firstly, a generalized model of surface potential based on 2D Poisson equation for homojunction TFETs is developed....
Article
This paper presents an analytical model of drain current in a silicon tunnel FET with a circular gate (CG TFET). The method involves the bifurcation of the complete geometry into a rectangular gate conventional TFET, and the CG TFET itself based on the number of solvable regions of the CG TFET. The 2-D Poisson equation is solved on the regions of f...
Article
Full-text available
This paper proposes a Silicon Tunnel Field Effect Transistor (TFET) with circular gate, and optimizes the structure for better performance. Two steps of performance optimization are adopted: reduction in ambipolar current and increase in on-off current ratio. The former objective is accomplished through introduction of gate-drain underlap, and the...
Article
This paper presents and validates an algorithm based on 2-D Poisson’s Equation, and proposed ‘tangents on surface potential plots’ approach to extract threshold voltage in a Silicon Tunnel Field Effect Transistor (TFET) with a SiGe layer at tunnel junction. The approach stands valid for homojunction Silicon TFET and SiGe channel Silicon TFET.
Conference Paper
This paper proposes a Silicon Tunnel Field Effect Transistor (TFET) with circular gate, and optimizes the structure for better performance. Two steps of performance optimization are adopted: reduction in ambipolar current and increase in on-off current ratio. The former objective is accomplished through introduction of gate-drain underlap, and the...
Article
This paper reports the analysis of noise in Circular Gate TFET in presence of interface traps (Gaussian) when the device is subjected to scaling of gate-drain underlap length and body thickness, and change in gate work function and gate dielectric constant. TCAD simulations show that generation-recombination noise is dominant at low frequencies whe...
Article
A Silicon based two dimensional (2D) hetero-dielectric stack gate SOI Tunneling Field Effect Transistor (SOI-TFET) with back-gate is proposed. Simulation results show that the proposed structure can be scaled down without affecting Subthreshold Swing unlike conventional TFETs with SiO2 as gate dielectric. On state of the device is independent of ba...
Article
This paper develops a 2-D model for surface potential, electric field and drain current for a nanoscale Silicon TFET with a δp+ Si1-xGex layer at source-channel tunnel junction. Mathematical formulation based on the Tunnel FET physics has been carried out throughout the text taking into consideration the various parameters involving the mole-fracti...
Article
This paper proposes structures of tri-gate heterojunction (HJ) FinFETs with different configuration of gate dielectric and gate material stacks: Single Gate Material Single Dielectric (SGMSD), Single Gate Material Dual Dielectric (SGMDD) and Dual Gate Material Dual Dielectric (DGMDD), and compares their characteristics with conventional FinFET. The...
Article
In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of...
Article
This paper presents a novel architecture of Tunnel Field Effect Transistor (TFET) with a circular gate and reports the effect of electrical noise on the device by comparing the results with a hetero-junction TFET. TCAD simulations involving uniform and Gaussian trap distribution conclude that the proposed Circular Gate TFET shows lesser values of n...
Conference Paper
Full-text available
A hetero gate dielectric SOI TFET is presented here. The device performance is observed in TCAD. The effect of channel doping on the device characteristics is studied. Moreover, the effect of different gate dielectrics on the ON current, OFF current, band-to-band generation rate due to different body layer thickness, and variation of oxide thicknes...
Article
This paper models the mathematical expression of Transmission Probability and Tunneling Probability in a single rectangular potential barrier as a sole function of Transmission Probability in a single step potential barrier. Such expressions have been formulated taking into account the limitation that Tunneling Probability in a single step potentia...
Article
Full-text available
This paper presents a dual dielectric step-gate SOI n-Tunnel Field Effect Transistor and demonstrates the optimization of ratio of on and off current in it by introducing gate-source overlap and gate-drain underlap. Effect of back-gate voltage on the device is reported. Variation of gate-capacitances with front-gate voltage is also illustrated, and...
Article
In this paper, gate induced band-to-band tunneling transistors are explored as a low voltage alternative because of their potential to achieve lower than 60mV/decade turn-off. Since BTBT is strongly dependant on the band gap of the semiconductor, lower band gap materials can help scaling down of Vnn-By engineering the transistor device structure an...
Conference Paper
Tunnel Field Effect Transistors (TFETs) have developed as promising devices for low power applications owing to their ability to sustain the effects of scaling. Sub-kT/q Subthreshold Swing (SS), lower off currents and negligible Short Channel Effects present them as suitable alternatives to MOSFETs. This work presents for the first time a hetero-ga...

Questions

Questions (4)
Question
Charcoal is crushed into fine powder and deposited on a substrate and dried. The resistance shown is ~3 kOhm. After 60 mins., the resistance jumps to 4 kOhm. In order to understand this, what is the best resource to start from? The deposit is at centimeter scale. Is it because the deposited charcoal has different paths for conducting electricity due to its amorphous nature?
Question
How can one study self heating/hot electron effects in a MOS device in Sentaurus TCAD?
Which command exactly helps to extract thermal resistance in Sentaurus TCAD?
Ref: A new rounded edge fin field effect transistor for improving self-heating effects, Japanese Journal of Applied Physics 50 (12R), 124303, 2011.
---A new nanoscale and high temperature field effect transistor: Bi level FinFET, Physica E: Low-dimensional Systems and Nanostructures 44 (3), 654-658, 2011.
Question
Is there any way to view quantized energy levels in Sentaurus TCAD using vanDort quantization model?
Question
For example, a cuboidal Silicon substrate with semi-cylindrical deposition on top if viewed in 3D. Can an omega shaped FinFeT be taken as a reference for such devices, where the ratio of the width and height of the omega fin may be equal, and half of it is deposited over Si? 

Network

Cited By

Projects

Projects (2)
Project
Under Nanocavity-in-Body Tunnel Field Effect Transistor Architectures for Low Power Sensing Applications sponsored by DST-SERB File No. SRG/2019/000660. -Investigate TFET architectures for sensing applications. -Compare TFETs with other sensors -Formulate principles and techniques for performance analysis in TFETs
Project
To detect nutrients in agricultural soil using raw charcoal based sensor.