Rosfariza Radzali

Rosfariza Radzali
Universiti Sains Malaysia | USM · School of Physics

About

29
Publications
5,286
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147
Citations
Citations since 2016
11 Research Items
111 Citations
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201620172018201920202021202205101520
201620172018201920202021202205101520

Publications

Publications (29)
Article
Full-text available
In this project, an investigation on the effect of difference shapes of the top surface silicon (Si) solar cell as an antireflective (AR) layer was carried out. Texturing the top surface of silicon solar cell helps to reduce light reflection from the solar cell. The different surface texturing which is planar structure, columnar structure and pyram...
Article
Full-text available
The objective of this study is to investigate the potential material, PDMS as a flexible antenna substrate for body centric wireless application. A stretchable and flexible antenna design fabricated with thin copper as the radiating element and using the polydimethylsiloxane as the substrate is presented. Thin copper sheet based conductor has been...
Conference Paper
In this study, the characterization of porous Gallium Nitrate (PG) for potential Ultra-violet (UV) light emission was examined by simulation. The simulation was carried out using SILVACO TCAD tools to fabricate the PG. By using DevEdit, the structure was constructed, and the device simulation was carried out using ATLAS provided by the SILVACO TCAD...
Conference Paper
In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the sol...
Conference Paper
This project presents a new method to fabricate porous Si using two-step Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) technique. The n-type Si (111) was initially etched for a short time to form high density of etch pits and subsequently the sample was anodized in HF solution by using alternating current photo-assisted electro...
Article
Full-text available
In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation resul...
Article
Full-text available
Effects of ultraviolet-assisted photo-electrochemical (PEC) etching current densities (J=20, 40, 80, and 160mA/cm2) towards structural, physical, and optical properties of aluminium indium gallium nitride (AlInGaN) semiconductors as well as corresponding schematized mechanism were studied and discussed. Formation of porous AlInGaN semiconductors at...
Article
This paper describes the development of gas sensors based on platinum (Pt) Schottky contact on porous InAlGaN for hydrogen gas sensing. Porous InAlGaN samples were successfully fabricated by photoelectrochemical etching for different etching durations. Pore density and surface roughness increased with etching duration. Pt Schottky contacts which ac...
Article
The effect of etching duration on the porous structure of quaternary III-nitride alloy, InAlGaN prepared using the photoelectrochemical etching technique was evaluated in this study. Field emission scanning electron microscopy (FE-SEM) revealed that the pore density of the sample increased with increased etching duration, as did the root mean squar...
Article
This paper presents the structural and optical studies of porous GaN prepared by photoelectrochemical etching in diluted KOH under different etching durations. Such etching technique is a cheaper and simpler way of fabricating porous structure. The as-grown and porous GaN samples were investigated by field emission scanning electron microscopy, hig...
Article
A number of porous InGaN samples of relatively high In composition similar to 47% were prepared via electrochemical etching using diluted KOH bath. The porous samples were synthesised with the assistance of different types of illumination; Xenon and UV light. Fabrication of porous InGaN without light illumination was also demonstrated. The effects...
Article
The fabrication of porous InGaN of high In composition similar to 47% using UV-assisted electrochemical etching in a diluted solution of KOH is demonstrated for the first time. In this paper, the effect of etching time on the morphology of porous InGaN was investigated using field emission scanning electron microscopy (FE-SEM). Pore size and densit...
Article
Full-text available
A number of n-type Si (100) samples were prepared into porous structures via electrochemical etching process, using an electrolyte solution; HF and ethanol. The morphological properties of the samples were observed under scanning electron microscope measurement. The results showed that the pore density, pore uniformity distribution and pore size of...
Article
In this report, the growth of GaN p-n junction on Si (111) substrate by plasma-assisted molecular beam epitaxy (PAMBE) is demonstrated. Doping of the GaN p-n junction has been carried out using Si and Mg as n-type and p-type dopants, respectively. Silicon substrate is used to grow the GaNpn-junction. In order to improve the crystalline quality of t...
Article
At present, sapphire (Al3O2) has been commercially used as the substrate for GaN (gallium nitride) based structure and device. Such substrate, however would not sustain long-term economic growth as the low-cost semiconductor device based product at larger scale is impossible. Alternatively, Si (silicon) substrate offers many advantages as it is che...
Article
The technology of GaN (gallium nitride) has been demonstrated at great speed as it allows devices base on it to operate at high temperature, power and frequency. Nevertheless, the main issue of nitride growth nowadays is the choice of substrate that can promote the production of nitride devices at low cost level. Recently, many group researches pro...
Conference Paper
III-Nitrides semiconductor compound has been well recognized and become potential material for optoelectronics device applications as it has superior properties such as large and direct band gap, high-saturation velocity and high breakdown field [1]. High quality III-Nitrides materials have been grown by various methods and molecular beam technique...
Conference Paper
The authors study the presence defects in a GaN thin film, which was grown on Si (100) substrate using molecular beam epitaxy (MBE). The optical, structural and electrical characteristics of the sample are observed via photoluminescence (PL), X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall-effect measurements. From the measurem...
Article
Full-text available
Dual-tariff PV energy system was introduced to maneuver the lower tariff rate at off-peak period and to reduce the capital installation cost of PV energy system. In this paper, the system configuration, architecture and operation of the dual-tariff PV energy system are described and discussed. A 2.4 kW prototype system has been developed and run 24...
Article
Full-text available
Dual-power PV-grid system was introduced to manipulate the lower tariff rate at off-peak period and to reduce the capital installation cost of PV energy system. In this paper, the system configuration, architecture and operation of the dual-power PV energy system are described and discussed. From the review of various multilevel inverter topologies...
Article
Full-text available
The virtual monitoring system has rapidly increased its popularity because of its graphical based programming especially for data acquisition and measurements. In order to monitor the performance of the system especially for renewable energy (REN) source application such as solar photovoltaic (PV), data-acquisition systems had been used to collect...
Article
Full-text available
The solar Photovoltaic (PV) systems have been gradually growing on demand in Malaysia. One of the main objectives in developing the solar PV plant is on the cost effective feed-in tariff (FIT). The aim of this paper is to design and analyse the cost-benefit of a small scale guard house in Universiti Teknologi MARA (UiTM) Pulau Pinang, Malaysia whic...
Article
In this work, the modeling strategy of 32 V asymmetric High Voltage MOSFETs fabricated in 180 nm High Voltage CMOS process technology using Aurora and Hspice level 66 is presented. The model is validated on the measured characteristics of asymmetric HV MOSFET and implemented on commercial circuit simulator HSPICE. The model shows excellent DC IV ch...

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