Robert Menzel

Robert Menzel
Leibniz Institute for Crystal Growth | IKZ · Classical semiconductors

PhD

About

20
Publications
2,380
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106
Citations
Additional affiliations
November 2008 - present
Leibniz Institute for Crystal Growth
Position
  • PostDoc Position
November 2008 - September 2012
Leibniz Institute for Crystal Growth
Position
  • Research Associate

Publications

Publications (20)
Article
Full-text available
Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculated temperature field was in very good agreement wi...
Presentation
Full-text available
See the attached abstract, presentation slides and recording for further information.
Article
Based on own previous studies on dislocation generation in FZ- silicon crystals and in order to verify the location and conditions of dislocation generation and spreading, in the current work we present results from a model experiment using a measurement set-up close to the FZ process. Here, an as-grown dislocation-free FZ crystal with a diameter o...
Article
Full-text available
The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of...
Article
Full-text available
In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unkno...
Presentation
Mirrors and Materials for gravitational waves (GWs) by Einstein-Telescope (3GWD project)
Article
A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a...
Article
The large-area seeding concept was applied for Float-zone (FZ) growth of monocrystalline silicon, without the common Dash-technique for elimination of dislocations. Using large-seeding avoids the need for growth of a crystal cone with a smaller diameter than the wafer size. Crystals with 4 in. diameter and 120 mm length were grown using a modified...
Article
The crucible free growth of dislocation free respectively low defect single crystals on large diameter silicon seeds without using the common Dash technique was investigated. A promising concept to reach this aim was to reduce the thermal gradients and stresses. Therefore, a combination of RF- and MF heating, additionally to the standard FZ setup,...
Conference Paper
Full-text available
The granulate crucible method (Si-GC) has been proposed recently to produce monocrystalline silicon crystals for solar cell applications in particular [1–4]. This method attempts to avoid several drawbacks of the classical Czochralski and float zone growth techniques pushing the limits for impurity contents and process costs.
Conference Paper
Full-text available
Silicon growth from melt in a granulate crucible (Si-GC) is a novel concept to obtain crystals with a quality similar to Float Zone (FZ) Si at low feedstock costs [1-2]. For growth of crystals with well-defined shape, suitable process parameters can be identified by numerical simulation. In this work, a transient 2D numerical model implemented in C...
Conference Paper
Full-text available
A new method for silicon crystal growth using granulate as feedstock material has been proposed recently. This method bears resemblance to the well-known float zone growth but also places new challenges for both hardware design and numerical modeling. In this study we focus on the high-frequency induction heating. We compare and validate numerical...
Article
For the growth of large float zone (FZ) silicon crystals, currently limited to 200 mm diameter, a high process stability is necessary. A major drawback are arc discharges at the inductor, when the increasing diameter of the growing crystal requires higher RF voltages. An arc discharge mostly interrupts the dislocation-free growth of the crystal. In...
Article
The floating zone (FZ) technique is an industrially used method to crystallize silicon and make use of induction heating. The shape of the single-turn coil can be optimised with the help of numerical simulation of the electric current. The next step in process design is to discern the consequences on the temperature field, for what our axisymmetric...
Thesis
Die industrielle Züchtung versetzungsfreier Silizium-Einkristalle nach der Floating Zone (FZ) Methode trifft bei steigendem Kristalldurchmesser auf zwei wesentliche Hindernisse: das Risiko des elektrischen Durchschlags am Induktor und die Gefahr der Versetzungsbildung bzw. das Platzen des Kristalls infolge hoher thermomechanischer Spannungen. Gegen...
Article
The growth of Float-Zone silicon crystals of larger crystal diameter requires increasing power, e.g. increasing voltage at the inductor, which is limited by the breakdown voltage. Reduced working frequencies could help to solve this problem. However, the smooth melting of the feed rod is at risk for this case. The aim of this work is to investigate...
Article
Lowering the working frequency in the inductively heated floating zone growth of Si Single crystals will reduce the risk of arcing at the induction coil. This is of particular interest in the growth of large diameter crystals. In the current paper we present results from growth experiments at lower frequencies, 2 MHz and 1.7 MHz. It is found that t...
Article
Buoyancy-driven flow plays an important role in the solidification of multi-crystalline silicon in rectangular crucibles and has been subject of recent investigations (Miyazawa et al., 2008 1 and 2, Delannoy et al., 2007 [3]). Though the driving force due to the slightly curved temperature profiles is small, the large dimensions of industrial-scale...

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Project (1)
Project
Si single crystal growth from melt in a Si granulate crucible (Si-GC) is a novel concept to obtain dislocation-free crystals without contamination from a crucible material. The achievable purity depends only on the purity of the fluidized bed granules used as a low-cost feedstock material. We investigate the potential for a stable growth process for large-diameter crystals with a quality similar to Float-Zone Si.