# R. M. PeleshchakDrohobych Ivan Franko State Pedagogical University

R. M. Peleshchak

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66

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255

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Introduction

**Skills and Expertise**

## Publications

Publications (66)

Within the model of self-consistent connection of quasi-Rayleigh wave with adsorbed atoms, a method of constructing a new class of radiometric sensors of the temperature and concentration of adsorbed atoms on the surface acoustic waves is proposed. Based on the developed theory of the dispersion and acoustic mode width of a quasi-Rayleigh wave on t...

Within the model of self-consistent connection of quasi-Rayleigh wave with adsorbed atoms, a method of constructing a new class of radiometric sensors of the temperature and concentration of adsorbed atoms on the surface acoustic waves is proposed. Based on the developed theory of the dispersion and acoustic mode width of a quasi-Rayleigh wave on t...

In the paper, the influence of the electric field and the comprehensive pressure on the conditions of formationand the period of the surface superlattice of adatoms in semiconductors is investigated. It is established that inGaAs semiconductor, an increase in the comprehensive pressure and the electric field strength, depending on thedirection, lea...

The non-linear diffusion-deformation theory of self-organization of nanoclusters of dot defects in semiconductor exposed to ultrasound treatment that considers the interaction of defects among themselves and with atoms of a matrix via the elastic field created by dot defects and an acoustic wave is developed. Within this theory the influence of ult...

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical tempera...

In this paper, we propose a decision-making model based on the architecture of a three-layer perceptron with diagonal weighted synaptic connections between the neurons of the input, the latent and the original layers. The evolution of the model is carried out as a task of adaptation of the neural network, which consists of procedures for correction...

Dispersion relations for the spectra of surface electron states on a dynamically deformed adsorbed surface of a monocrystal with the Zinc blende structure are received. It is established that the dependences of the band gap width and of the concentration of electrons on the concentration of adatoms N_{0d} upon the solid surface are of nonmonotonous...

Time-frequency and time dependence of the output signal morphology of nonlinear oscillator neuron based on Van der Pol model using analytical and numerical methods were investigated. Threshold effect neuron, when it is exposed to external non-stationary signals that vary in shape, frequency and amplitude was considered.

Актуальність. Розглянуто задачу частотно-часової та часової залежності морфології сигналу на виході нелінійного осциляторного нейрона з урахуванням його порогового ефекту. Об’єктом дослідження є нелінійна модифікована модель Ван-дер-Поля, яка описує динаміку нелінійного осциляторного нейрона при дії на нього різних за формою, частотою та амплітудою...

The theory of nucleation of nanometer structure of the adatoms under the action of comprehensive pressure taking into account acousto-electronic interaction is developed. Self-organization occurs as a result of defect-deformation instability caused by self-consistent interaction between the adsorbed atoms and the surface acoustic wave. Within this...

The new method of minority charge carriers basic parameters determination and the ratio of minority charge carriers conductivity to majority ones in solid matter based on magnetoresistance curve analyses within the framework of the phenomenological two-band model has been proposed. The criterion of the applying of the method has been found. As the...

Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equatio...

The potential well depth for an electron in a nanoheterosystem with quantum dots has been calculated in the framework of the self-consistent electron-deformation model. It is shown that the strained InAs/GaAs nanoheterosystem with InAs spherical quantum dots is characterized by deformation fields, which appear at the quantum dot-matrix interface an...

У роботі в межах довгохвильового наближення розвинуто теорію дисперсії поверхневої пружної акустичної хвилі, що розповсюджується на поверхні напівпровідника GaAs (110), яка покрита адсорбованими атомами металу (або молекулами О2).Отримані дисперсійне рівняння та ширина акустичної фононної моди квазірелеєвської хвилі з врахуванням диполь-дипольної в...

The dispersion law for elastic surface acoustic waves and the dependence of the surface acoustic mode width on the concentration of adsorbed atoms have been found. The calculations are carried out in the long-wave approximation for the interaction between the adatoms with regard for image forces and the non-local elastic interaction between the ads...

Within the model of interaction between adatoms and self-consistent acoustic quasi-Rayleigh wave in the long-wavelength approximation, taking into account the nonlocal elastic interaction between adsorbed atoms and matrix atoms and the mirror image forces, the deformation potential of acoustic quasi-Rayleigh wave interacting with adsorbed atoms is...

The theory of electron states is developed on the adsorbed surface of semiconductor which is bounded by the rough surface. The surface roughness are formed by both quasi-Rayleigh acoustic wave and adsorbed atoms. A spectrum of surface electron states on the adsorbed surface of GaAs semiconductor in the long-wavelength, resonance and short-wave appr...

Within nonlocal elastic interaction between an adsorbed atom and matrix atoms and in consideration of the mirror image forces, a dispersion law of elastic surface acoustic waves is found to the long-wavelength approximation depending on the concentration of adsorbed atoms and the deformation potential of the adatom. The energy width of the surface...

On the basis of the method of electron-deformation relation and perturbation theory the model of heterostructure with spherical quantum dots which is exposed to ultrasound is developed. Within this model it is investigated the influence of the acoustic wave on the ground state energy of electron and hole, the band gap energy and energy of recombina...

A deformation-diffusion model describing the formation of periodic structures in semiconductors with a two-component defect subsystem by means of an acoustic wave has been developed. The theory makes allowance for the deformation created by the acoustic wave and point defects. In the framework of this model, a possibility of the ultrasound-stimulat...

The non-linear diffusion-deformation theory of self-organization of nanoclusters of dot defects in semi-conductor exposed to ultrasound treatment that considers the interaction of defects among themselves and with atoms of a matrix via the elastic field created by dot defects and an acoustic wave is developed. With-in this theory the influence of u...

In paper the model of the nano-acoustic-electronic converter on the basis of graphene nanotube is constructed and the amplitude-frequency characteristic is calculated. Within this model the frequency dependences of amplitude of deformation, surface concentration of electrons and electrostatic potential are established. It is established that at inc...

The magnetic field experimental dependences of vanadium and chlorine doped Cd1-xZnxTe monocrystals magnetic susceptibility have been research. The magnetic susceptibility non-linearity has been observed. It is shown that this non-linearity due to super paramagnetic nature magnetic clusters forming.

The role of acoustoelectric effects in the formation of nanoscale structures of adatoms, resulting from the self-consistent interaction of adatoms with a surface acoustic wave and the electronic subsystem, is studied for the case of charged and uncharged adatoms. It is shown that an increase in the doping level of a semiconductor with donor impurit...

The theory of nucleation of nanoscale structures of the adsorbed atoms
(adatoms), which occurs as a result of the self-consistent interaction of
adatoms with the surface acoustic wave and electronic subsystem is developed.
Temperature regimes of formation of nanoclusters on ${n}$-GaAs surface under
the action of laser irradiation are investigated....

The model of spatial-temporal distribution of point defects in a three-layer
stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the
self-assembled deformation-diffusion interaction is constructed. Within the
framework of this model, the profile of spatial-temporal distribution of
vacancies (interstitial atoms) in the stressed nano...

In this paper, the model of nanoacoustoelectronic converter based on graphene nanotubes and calculated frequency response. The proposed model takes into account the size dependence of the elastic constants and the sound velocity in graphene. It is established that an increase in electron density and decreasing radius nanotubes increases the sensiti...

In the framework of the self-consistent electron-deformation model, the theory describing the formation of the quantum potential band profile and the energy levels of an electron and a hole in a stressed nanoheterosystem with coherently-strained quantum dots has been developed, and their dependences on the degree of doping of the nanoheterosystem m...

Influence of the ultrasound on talc (Mg3Si4O10(OH)2) cathode material was experimentally investigated. The Gibbs׳ energy change of the Li+-intercalation process, the diffusion coefficient in LixMg3Si4O10(OH)2, the charge transfer resistance and the capacitance of the electric double layer were studied in electrochemical cells, based on initial and...

Non-linear theory of diffusion of impurities in porous materials upon
ultrasonic treatment is described. It is shown that at a defined value of
deformation amplitude, an average concentration of vacancies and temperature as
a result of the effect of ultrasound possibly leads to the formation of
nanoclusters of vacancies and to their periodic educat...

The distribution of hydrostatic strains in Bi3+-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitat...

The non-linear diffusion-deformation theory of the self-organization of nanoclusters of the implanted impurities which considers elastic interaction of the implanted impurities among themselves and with the atoms of a matrix is developed. Within this theory criteria of the formation of nanoclusters of the implanted impurities are established. The c...

A theoretical model describing the modulation of a direction of radiation emitted by an InAs/GaAs heterolaser with InAs quantum dots under the influence of an acoustic wave has been developed. The character of the dependences of the emission deviation angle on the acoustic wave frequency and the geometric sizes of quantum dots has been determined.

Equations, which enable the electron energy spectrum in a three layer hetero system containing a cluster of point defects in a quantum well to be calculated, have been derived in the framework of the deformation potential method. The dependence of the electron energy difference between the first excited and ground states on the average concentratio...

The paper reports results of theoretical calculations of the redistribution of electrons and electrostatic potential in the implanted crystalline matrix (100)-GaAs+Si(Ar) due to electrondeformation effects. The model requires a self-consistent solution of the set of following equations: 1)the time-independent Schroedinger equation; 2) the equation...

We have developed a theoretical model that describes the process of frequency modulation of radiation emitted at the recombination transition between the ground states of an electron and a hole in the InAs/GaAs heterostructure with InAs/GaAs quantum dots, the modulation being induced by an acoustic wave. The character of the dependence of the frequ...

The deformation-diffusion model of space-time redistribution of dot defects under the influence of an acoustic wave is constructed. The offered theory considers the deformation, created by an acoustic wave and dot defects. It is shown that under the influence of an acoustic wave the periodic defect-deformation structures with the period equaling th...

Distributions of the electrostatic potential, electric field strength, and electron concentration for a strained semiconductor
quantum dot (QD) have been calculated within the nonlinear Poisson model with allowance for the deformation potential that
arises due to a lattice misfit between the QD and matrix.

The mechanic-deformation model of a nanoheterosystem with quantum dots which is under the influence of an acoustic wave is constructed. The uniform deformation of the InAs/GaAs heterostructure with InAs quantum dots is calculated. The offered approach takes into account as a strain caused by a misfit of parameters of lattices of contacting material...

The influence of elastic deformations that arise owing to a mismatch between the lattice parameters of contacting semiconductor materials and in a vicinity of the defect cluster induced by interstitial cadmium in a doped semiconductor CdTe substrate on the electron injection into the insulating layer of the metal-undoped ZnxCd1-xTe semiconductor-n-...

A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n+ - n junction.

The theory of the formation of n+ - n junctions in stressed nanoheterosystems with quantum dots (QDs) has been developed in the framework of the self-consistent electron-deformation model. An electric double layer, i.e. an n+ - n junction, has been shown to emerge at the QD-matrix stressed interface.

A nonlinear model describing the self-consistent electric-deformation-diffusion redistribution of point defects in semiconductors has been proposed. Conditions for the bulk of a CdTe semiconductor to be purified from clusters of ionized Cdi interstitials have been established.

In the context of the deformation potential model, baric dependences of the energy structure of InAs quantum dots in a GaAs
matrix are calculated. Under the assumption of the absence of interaction between the spherical quantum dots of identical
sizes, the energy dependence of the baric coefficient of energy of the radiative transition in the quant...

Analytical expressions describing the energy spectrum of electrons and holes are obtained for a quantum dot (QD) occurring
in a self-consistent strain field created by an array of coherently stressed QDs. A method of taking into account the lattice
mismatch at the QD-matrix interface is proposed that allows for the dependence of the mismatch parame...

The electron-deformation interaction is investigated in PbS/ZnSe heterostructures obtained by MBE growth of thin PbS films on monocrystalline ZnSe substrates with lattice parameter mismatch more than 4%. Within the framework of an electron-deformation model it is shown that lead sulfide films undergo the lattice compression strain or lattice tensil...

In the framework of an electron-deformation model, a mechanism of electron-deformation dipole formation at a strained heterointerface was considered. For a ZnSe/ZnS heterostructure, an external electric field similar to 120 kV/cm normal to the heterointerface brought about an additional compression strain of similar to 4% (similar to 3%) in the ZnS...

The model of self-consistent electron-deformation coupling was used to show that additional periodic local electron-deformation
wells and barriers arise in the vicinity of heterocontact in a strained ZnSe/ZnS superlattice within the main quantum well
(ZnSe) and above the main barrier (ZnS). It is found that, for the thickness of the ZnSe overgrown...

Cu∼–p-CdTe contacts formed by deposition of Cu film on a mechanically polished (001) surface of p-CdTe single crystal exhibit rectification property, contrary to ohmic property of Cu–p-CdTe contacts on the chemically polished surface of p-CdTe. The height barrier is estimated assuming that it is caused by the distortion band structure at the CdTe s...

Using earlier proposed method of selfconsistent investigation of the lattice strain the localized electron states in the vicinity of an edge staight linear dislocation are analyzed, namely the dependence on the value of the electron-deformation interaction. It is shown that the depth of the state location nonmonotonously depends on such an interact...

A crystal with a local plane defect in the external magnetic field ori-ented along the plane is investigated. Within the framework of the varia-tional method a qualitative analysis of the degree of deformation depend-ing on is carried out. It is shown that an increase of entails a more localized lattice distortion and its increase.

This paper is devoted to a self-consistent solution of the electron-strain interaction in a crystal with linear dislocations. It shows that such self-consistency causes charge to be redistributed in the neighborhood of the dislocation nucleus and hence renormalizes the strain caused by the dislocation. The resulting charge redistribution forms a di...

The work function of deformed metal in the vicinity of a planar defect (a planar boundary between regions with different stress levels) is studied on the basis of band structure calculations that self-consistently take into account the electron-lattice interaction in strained metal. The work function of metal is shown to vary nonmonotonically in th...

Within the frames of band approach the method of self-consistent electron-deformation interaction is applied to calculate the work function of electrons in the vicinity of a plane defect in the form of plane boundary between regions with different mechanical stress in metal. It is shown that electron work function in the vicinity of plane defects i...