Pınar Oruç

Pınar Oruç
Gazi University · Department of Physics

Master of Science
Research assistant at the Department of Physics, Gazi University, Ankara/Turkey.

About

9
Publications
1,256
Reads
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24
Citations
Introduction
Pınar Oruç is currently research assistant at the Department of Physics, Gazi University.
Additional affiliations
April 2019 - present
Gazi University
Position
  • Research Assistant
February 2018 - August 2020
Ankara University
Position
  • Project Asistant
Education
September 2020 - December 2024
Gazi University
Field of study
  • Solid State Physics, Experimental Physics
February 2018 - August 2020
Ankara University
Field of study
  • Mathematical Physics, Solid State Physics.
November 2011 - July 2017
Ankara University
Field of study
  • Physics

Publications

Publications (9)
Article
Full-text available
In this study, a Schottky barrier diode with an Al/TPA-IFA/p-Si structure was fabricated using spin coating and thermal evaporation methods. Using forward and reverse bias I–V measurement, we examined the key electrical characteristics of the Al/TPA-IFA/p-Si diode, including Φb, n, Rs, and Nss; we also estimated VD, NA, EF, ∆Φb, WD, Φb and Nss usin...
Article
Full-text available
n-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and 3.37 eV by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W, respectively, and the carrier type of TPA-IFA...
Article
Full-text available
In this study, a layer of isonicotinohydrazide and pyrene-based Schiff base (PyMIs) was formed on the front side of a p-Si semiconductor using the spin coating method, and an Al/PyMIs/p-Si/Al diode was fabricated. The I-V characteristics of the fabricated diode were measured under dark and from 20 to 100 mW/cm² illumination intensities for both for...
Article
Full-text available
In this paper, an organic semiconductor, N-(2-((pyren-4-yl)methyleneamino)ethyl)-5- nitropyridin-2-amine (Pyr-Pic), was synthesized and was used as an interfacial organic layer to fabrication of Al/Pyr-Pic/p-Si/Al diode. The device's characteristic parameters were determined under various operating situations using current-voltage (I-V) measuremen...
Article
Full-text available
A unique Al/Terp-Pyr/p-Si/Al diode structure that has not before been presented was introduced in this paper. Utilizing capacitance-conductance-frequency (C-G-f) characteristics in the frequency range of 20 Hz− 1.5 MHz for four temperatures of 300 K, 325 K, 350 K, and 375 K, admittance analysis was carried out to disclose the impedance and dielectr...
Article
Full-text available
In this study, TiO2 powder was prepared by sol-gel methods, divided into equal amounts, and three samples were formed. They, except for one sample, were annealed at different temperatures, and three bulk samples were obtained. The crystal structures of all samples were determined by X-ray diffraction (XRD) measurements. According to the XRD measure...
Article
Full-text available
Zn0.95Co0.05O was synthesized by sol-gel method and then Zn0.95Co0.05O pellet was prepared to investigate its structural, morphological, electrical, and impedance properties. For this purpose, the pellet was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and impedance measurement techniques. SEM images showed that the...
Article
Full-text available
Polycrystalline Zn0.95Co0.05O bulk sample was prepared by using a sol–gel method. The temperature dependence and frequency dependence of AC conductivity, dielectric and electrical modulus of bulk Zn0.95Co0.05O in a pellet form were investigated in the temperature range of 300–500 K and frequency range of 1 kHz–1.5 MHz. While the real values of diel...

Questions

Question (1)
Question
Hello dear,
Normally, the relaxation peak of the imaginary part of impedance shifts to a higher frequency with increasing temperature, but we face to face a case. Firstly, the relaxation peak of the imaginary part of the impedance shifted to a higher frequency region with increasing temperature between 300-350K, then it shifted to a lower frequency region with increasing temperature between 350-400K. We have taken measurements again and again, but we obtained the same result. When I examined the literature, I can not find the same result. Why could the case happen?
Thank you a lot.

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