Philippe Godignon

Philippe Godignon
Barcelona Microelectronics Institute · Systems Integration

About

467
Publications
75,221
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
7,869
Citations
Citations since 2017
60 Research Items
4442 Citations
20172018201920202021202220230200400600
20172018201920202021202220230200400600
20172018201920202021202220230200400600
20172018201920202021202220230200400600

Publications

Publications (467)
Conference Paper
Full-text available
A full monolithic integration in multi-terminal SiC dies of a generic H-bridge power converter (800V/10A) consisting of dual N-type vertical MOSFET switches within only two multi-terminal chips is proposed. Innovative two multi-terminal monolithic power SiC-chips are introduced and studied by 2D Sentaurus simulations. The first one integrates the h...
Conference Paper
Full-text available
This paper aims at demonstrating the relevance of a new design perimeter for power switching cells through a monolithic vertical integration approach on a multi-terminal power chip with Wide-Band Gap material such as 4H silicon carbide (SiC). Multi-terminal monolithic architectures making use quasi-only of vertical unipolar switch (VDMOS) and JBS d...
Article
Full-text available
The reconstruction of 4°off 4H-SiC surfaces was investigated using Si melting at 1550°C in a SiC/Si/SiC sandwich configuration. Despite systematically obtaining a macrostepped morphology over the entire areas in contact with the liquid Si, the steps were found wavy when using as-received 4H-SiC wafers. The regularity and straightness of the steps w...
Article
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up eff...
Article
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron, neutron and proton irradiated 4H-SiC pn junction diodes are investigated by means of elect...
Preprint
Full-text available
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up eff...
Conference Paper
Full-text available
Current Crowding phenomenon is one of the most important issues compromising power device reliability. In this work a 4-H SiC Schottky diode with a junction termination extension is studied when this phenomenon occurs. TCAD modelling of the device is detailed and different doping profiles for the n-type buffer layer of the drift zone are simulated....
Article
Full-text available
Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high ener...
Article
Full-text available
Edge termination is a critical part of a power devices. Numerous edge termination types have been developed for silicon devices. Implementation of these termination architectures are not straightforward in SiC due to physical and processing specificities: lower junction depths, higher electric field, trench depth and shaping limitations, etc. Two m...
Article
Full-text available
Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growi...
Article
Full-text available
Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasma-optical coefficient for the refractive index is reported for the first time. A SiC Schottky diode with an edge termination based on a junction termination extension is used as a test vehicle. Und...
Article
Full-text available
In recent years, the quest for surface modifications to promote neuronal cell interfacing and modulation has risen. This course is justified by the requirements of emerging technological and medical approaches attempting to effectively interact with central nervous system cells, as in the case of brain-machine interfaces or neuroprosthetic. In that...
Article
Full-text available
Chlorine-based gases are used for the reactive ion etching (RIE) of β − Ga 2 O 3. However, the effects of Cl-plasma on the electronic properties of β − Ga 2 O 3 are not known. In order to shed light on this topic, we carried out an experimental and theoretical study on β − Ga 2 O 3 epilayers treated with Cl 2 / Ar or BCl 3 / Ar plasma. We found fou...
Article
Full-text available
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical...
Article
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In...
Article
This work aims to the analysis of high-voltage (HV) SiC MOSFETs' reliability and robustness. Large-area (up to 25 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) devices rated for 1.7-, 3.3-, and 4.5-kV applications were fabricated with a special process for gate oxide formation aimed to i...
Conference Paper
Full-text available
For the first time, die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection (IIR-LD) set-up. As a test vehicle, a 1.2 kV SiC Schottky diode (1.6x1.6 mm2 active area) with an edge termination based on a junction termination extension has been studied under 100 us-pulsed currents (ranging fr...
Article
In this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A nuclear microprobe was used to locally irradiate micrometer-sized regions of the detector with 3.5 MeV He ions to fluences from 5 × 10⁹ to 5 × 10¹¹ cm⁻². Ion Beam Induced Charge (IBIC) micro...
Conference Paper
The use of graphene transistors for transducing neural activity has demonstrated the potential to extend the spatiotemporal resolution of electrophysiological methods to lower frequencies, providing a new tool to understand the role of the infra-slow activity.
Article
This work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm ² ) devices rated for 3.3 kV applications were fabricated with a special process for the gate oxide formation. The unit cell was designed to achieve good short-circuit performance. Static and dynamic...
Article
Full-text available
This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared to that of a 3.3kV JBS diode.
Article
In this work, we have evaluated 4° off-axis Si face 4H-SiC MOSFETs channel performance along both the [11-20] (perpendicular to steps) and [1-100] (parallel to steps) orientations, to evidence possible anisotropy on Si-face due to roughness scattering effect. Improved gate oxide treatments, allowing low interface state densities and therefore high...
Article
Full-text available
This paper reports two original methods aimed for the surface recombination studies of bipolar junction transistors made on silicon carbide subject to a significant surface recombination around the emitter-base junction. The first novel method targets the measurement of very short minority carrier lifetime in semiconductor junctions by combining th...
Article
In previous works, an alternative gate oxide configuration, based on a boron treatment, was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs. In this paper we study the effect of this treatment on 6H-SiC MOSFETs and we compare it to their 4H-SiC counterparts. The gate oxide...
Article
Full-text available
Recording infraslow brain signals (<0.1 Hz) with microelectrodes is severely hampered by current microelectrode materials, primarily due to limitations resulting from voltage drift and high electrode impedance. Hence, most recording systems include high-pass filters that solve saturation issues but come hand in hand with loss of physiological and p...
Book
Full-text available
The target of present work is to demonstrate experimentally the development of SiC MESFET-based integrated circuits: digital, analog and power devices embedded by a unique technology on the same chip. Three level metal interconnection technology and junction implanted isolation walls were used for the integrated circuit fabrication. The experimenta...
Conference Paper
This paper describes an original method for very short minority carrier lifetime evaluation of semiconductor junctions that is aimed to be mainly used for the surface recombination studies of bipolar junction transistors made on silicon carbide, where an important surface recombination between base and emitter occurs. The presented method is based...
Article
This paper shows the effect of performing consecutive measurement prior to negative bias stress instability (NBSI) on diamond metal-oxide-semiconductor capacitor (MOSCAP). For the first time, time-dependent stress tests have been carried out in order to investigate the stability of the flatband voltage (VFB) of MOSCAPs through capacitance-voltage (...
Article
This paper deals with investigation and fabrication of 4H-SiC MOSFETs with a high-k dielectric close to ZrSiO 4 . We are looking for the optimal stochiometry in order to obtain full benefits of its large bandgap, a k value higher than that of SiO 2 , thermodynamic stability on SiC, a good interface quality and process compatibility with SiC technol...
Article
Full-text available
The fabrication of CMOS devices in SiC is important for both a higher operating temperature capability and the integration with SiC power devices. In this work, n-channel and p-channel signal MOSFETs have been successfully fabricated using a process technology fully compatible with our HV SiC VDMOS technology. A preliminary SiC CMOS inverter has be...
Conference Paper
In this paper, the result of a long term HTRB Test with a test time over 5000 hours on novel 3.3kV SiC-JBS-Diodes is presented. The diodes under test have an area of 5x5mm² with a p-stripe design and a JTE-based edge-termination. Two splits were tested, one with globtop cover underneath silicone gel potting and the other with gel potting only. Both...
Article
Full-text available
Brain–computer interfaces and neural prostheses based on the detection of electrocorticography (ECoG) signals are rapidly growing fields of research. Several technologies are currently competing to be the first to reach the market; however, none of them fulfill yet all the requirements of the ideal interface with neurons. Thanks to its biocompatibi...
Article
Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiati...
Article
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality of the SiO2/SiC interface severely limits the value of the channel field-effect mobility, especially in 4H-SiC MOSFETs. Several strategies have been addressed to overcome this issue. Nitridation methods are effective in increasing the channel mobility and have b...
Article
To obtain p-type doping of diamond through B ion implantation, thermal treatments are necessary to reconstruct the diamond lattice and to locate B atoms in substitutional lattice positions. The present contribution evaluates by STEM-EELS and CL spectroscopy the amorphisation of diamond lattice under the B⁺ bombardment and its subsequent reconstruct...
Article
Full-text available
An alternative gate oxide configuration is proposed to enhance the SiO2/SiC interface quality, enabling high mobility 4H-SiC lateral metal-oxide-semiconductor field-effect transistors (MOSFETs). The gate oxide is prepared by the combination of rapid thermal oxidation in N2O ambient, boron diffusion into SiO2, and plasma enhanced chemical vapor depo...
Article
A new process technology for 4H-SiC planar power MOSFETs based on a boron diffusion step to improve the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /silicon carbide interface quality is presented in this paper. Large area (up to 25 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Article
Full-text available
We performed deep level transient spectroscopy (DLTS), in capacitance, constantcapacitance and current mode, on 5 MeV proton irradiated 4H-SiC p+-i-n diodes. The study has revealed the presence of several majority and minority traps, ranging in the 0.4-1.6 eV below the conduction band edge and in the 0.4-1.5 eV above the valence band edge. We prese...
Article
SiC planar VDMOS of three voltages ratings (1.7 kV, 3.3 kV and 4.5 kV) have been fabricated using a Boron diffusion process into the thermal gate oxide for improving the SiO 2 /SiC interface quality. Experimental results show a remarkable increase of the effective channel mobility which increases the device current capability, especially at room te...
Article
A new oxide configuration for the development of high mobility 4H-SiC lateral MOSFETs is proposed in this work. The oxide is composed by a rapid thermal oxidation (RTO) in N 2 O environment, a Boron diffusion into the SiO 2 and a PECVD TEOS deposited oxide, in order to improve the interface quality. The obtained MOSFETs show very high peak field ef...
Article
In this paper, the impact of temperature and time stress on gate oxide stability of several multi-implanted and epitaxied 4H-SiC nMOSFET is presented. The oxide layer was processed under a rapid thermal process (RTP) furnace. The variation of the main electrical parameters is shown. We report the high quality and stability of such implanted MOSFETs...
Article
Several edge termination structures for high voltage 4H-SiC devices compatible with a planar power MOSFET fabrication process are analyzed in this paper. The edge terminations' efficiency has been experimentally demonstrated on PiN diodes with breakdown voltage capabilities ranging from 2 to 5 kV, fabricated within a full power MOSFET process techn...
Conference Paper
A new gate oxide configuration, including a Boron treatment, is reported in this work. It is designed to improve the SiO 2 /SiC interface quality in 4H-SiC N-MOSFETs. The obtained results show high field effect mobilities up to 160 cm 2 /Vs. The fabricated devices have also been undergone to a BSI stress up to 20 h at room temperature showing good...
Article
Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick...
Article
Full-text available
A surge current robustness improvement based on experimental surge current evaluation is proposed for various layout designs of 1.2kV silicon carbide junction barrier Schottky diodes. The silicon carbide devices working at temperatures significantly higher than silicon power devices need specific reliability tests, adapted to high temperature opera...
Article
Full-text available
This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes a...
Article
Full-text available
In this contribution, we report on the electrical characterization of point defects in 4H-SiC p + in diodes. Ten electrically active levels have been detected in the base region of the devices, by employing Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Of these ten levels, six are majority carrier trap...
Chapter
After the major efforts made and the progress achieved in CVD graphene synthesis, the real challenge in graphene devices lies in the ability to safely transfer these synthesized layers to a target substrate. The transfer is a complex process that involves many steps which are not usually fully described in the literature. This chapter will try to f...
Article
We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology pu...
Article
Full-text available
This work reports experimental results on surge current capability of press-pack SiC diodes: Schottky, JBS and PIN. Our investigation showed a strong improvement of electro-thermal performances of the surge current capability for the 5.5 kV JBS diodes by using press-pack encapsulation. The surge current failure analysis for the press-pack SiC diode...
Article
The electrical behaviour of irradiated and post-irradiation annealed nMOSFETs with an implanted p-type body and having a N2O oxynitrided gate oxide is analysed in this work. This study reveals the existence of a “threshold fluence” which might change the predominant SiO2/SiC interface charge trapping type from donors to acceptors at a given energy....
Conference Paper
Full-text available
This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind Power and Solid-State Transformer applications. SiC diodes with voltage ranges between 1.7kV and 9kV have been designed and fabricated. On the other hand, SiC JFETs and, specially, SiC MOSFETs are also under development, and preliminary prototypes of 3.3 kV SiC M...
Conference Paper
Full-text available
This paper continues our previous works about the integrated circuits development on the 4H-SiC semiconductor, based on finger gate MESFETs. It describes a comparator designed exclusively with normally-on MESFETs and epitaxial resistors. For this novel circuit design we have used the SPICE models previously extracted from devices further used for f...
Conference Paper
Full-text available
HfO 2-based metal-oxide-semiconductor (MOS) devices have been studied previously in the case of several semiconductors, such as Si [1], SiO 2 [2], GaAs [3], GaN [4] and AlGaN/GaN heterostructures [5, 6], although there is still little work regarding AlInN/GaN heterostructures [7]. Therefore, this work focuses on the analysis of the electron transpo...
Article
Reliability studies are required for SiC device development. In a previous work we studied the intrinsic ESD robustness of a SiC MESFET. The failure mechanism was related to the triggering of an NPN parasitic transistor. In this work, a new MESFET layout is considered, which optionally include a Zener diode for internal protection. TLP testing and...
Article
Full-text available
Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence of the electrical parameters, caused by a mixed barrier on the contact area and interface states. A simple analytical model that establishes a quantitative correlation between Schottky contact parameter variation with temperature and barrier height non-uniformi...
Article
Full-text available
This work demonstrates a functional fabricated high temperature compensated Voltage Reference (VR) integrated circuit on 4H-SiC material. The study starts with an experimental analysis on the feasibility on silicon carbide (SiC) of the widely used bandgap reference concept both with Schottky and bipolar diodes. Then an original solution is proposed...
Article
Full-text available
W-SBD show exceptional reliability from 200 to 500K, however, its barrier analysis has never been performed thoroughly down 81K. This paper shows our study of Schottky barrier and Richardson coefficient, both extracted for different temperature ranges. We observed fluctuation in function of the temperature. We analyse this phenomenon and compare it...
Article
Graphene is a 2D material with potential for almost any purpose, thanks to a combination of excellent characteristics, e.g. high electrical conductivity. Graphene grown on SiC wafers is one of the promising routes for graphene integration into planar technology electronic applications. Synthesis is based on the decomposition of a SiC single crystal...