Omar Al-Zuhairi

Omar Al-Zuhairi
Universiti Pendidikan Sultan Idris (UPSI) | upsi · Department of Physics

Ph.D.

About

33
Publications
1,413
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
110
Citations
Introduction
Currently, Dr. Omar is working as a Senior Lecturer at Department of Physics, Faculty of Science and Mathematics, Sultan Idris Education University. His research mainly focuses on nitride semiconductor materials which involves epitaxial growth by metal-organic chemical vapor deposition (MOCVD), characterization of epitaxial layers and device fabrication such as light emitting diodes (LED), laser diodes (LD), photo detectors (PD) and high electron mobility transistors (HEMT).
Additional affiliations
August 2020 - present
Universiti Pendidikan Sultan Idris (UPSI)
Position
  • Senior Lecturer
Education
February 2015 - August 2019
University of Malaya
Field of study
  • III-nitride Based-Optoelectronics
February 2012 - August 2014
Universiti Putra Malaysia
Field of study
  • Microwave Science
September 2005 - August 2009
University of Technology, Iraq
Field of study
  • Applied Physics

Publications

Publications (33)
Article
The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor depositi...
Article
We demonstrate high quality semi-polar (11-22) gallium nitride thin film grown on m-plane sapphire substrate with the insertion of AlN/GaN multi-layer via MOCVD. The influence of three different number of multi-layers AlN/GaN pairs on the crystal quality and surface morphology of semi-polar (11-22) gallium nitride thin film is investigated. The sur...
Article
Full-text available
We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal quality, optical and electrical properties was investigate...
Article
To date, considerable research has been devoted to semipolar (11-22) III-N based-light-emitting diodes due to the high demand for the future generation of high indium adsorption materials. However, higher indium content can generate stacking fault defects and partial dislocation that deteriorate the crystal, morphological, and optical quality. This...
Article
Full-text available
Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photo detection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nit...
Article
Full-text available
Abstract: Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar ga...
Article
Full-text available
We report on the crystal improvement of semi-polar (112¯2) gallium nitride epitaxy layer on m-plane (101¯0) sapphire substrate by changing the flux rate at a fixed V/III ratio. The high-resolution X-ray diffraction (HR-XRD) analysis showed that lower flux rate enhanced the crystal quality of GaN epitaxy with the lowest FWHM values of 394 and 1173 a...
Article
In this work, polyvinylpyrrolidone (PVP)/ Multi-walled carbon nanotubes (MWCNTs) nanocomposites were prepared with two concentrations of MWCNTs by casting method. Morphological, structural characteristics and electrical properties were investigated. The state of MWCNTs dispersion in a PVP matrix was indicated by Field Effect-Scanning Electron Micro...
Article
In this study, the effect of biscyclopentadienyl magnesium flow rate for the growth of p-type gallium nitride thin films was varied from 20 to 40 standard cubic centimeter per minute to acquire the optimum doping concentration level. The growth of semi-polar (11–22) p-type gallium nitride thin films on m-plane sapphire was accomplished via metal or...
Article
The use of organic materials has become an increasingly important issue in sensing devices in recent times. Phthalocyanine is among the most promising materials in this undertaking. Zinc phthalocyanine (ZnPc) based microporous device was fabricated and its capacitance was utilized as the sensing mechanism for a humidity sensor. The effect of the el...
Article
A single-crystalline semi-polar gallium nitride (11-22) was grown on m-plane (10-10) sapphire substrate by metal organic chemical vapor deposition. Three-step approach was introduced to investigate the grain size evolution for semi-polar (11-22) GaN. Such approach was achieved due to the optimized gallium to ammonia ratio and temperature variations...
Article
Crystal engineered semi-polar (11-22) GaN-based UV photodetectors have been fabricated which exhibit two dissimilar photo-responses depending on the crystal quality. The higher crystal quality evaluated via x-ray rocking curve (XRC) exhibited remarkable narrow full width half maximum (FWHM) along [-1-123] and [1-100] of 0.11° (396 arcsec) and 0.28°...
Preprint
Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray rocking curve analysis demonstrated an improved cr...
Article
Enhanced surface morphological properties of semi-polar (112¯2) gallium nitride (GaN) were successfully achieved via implementing an In-Situ Multiple Ammonia Treatment (I-SMAT) method. Utilization of an optimized flow of ammonia (1 SLM), surface striations of semi-polar (112¯2) GaN was reduced yielding RMS roughness of 4.20 nm. Low scan sizes of th...
Article
The crystal quality and morphological properties of semi-polar (11–22) gallium GaN were enhanced by introducing the In-Situ Multiple Ammonia Treatment (I-SMAT) method. On- and off-axis x-ray rocking curve (XRC) analysis reveals that I-SMAT would reduce several types of crystal defect namely prismatic stacking faults, basal stacking fault type I and...
Article
Efficient reduction of defects and dislocations in semi-polar (11-22) GaN epilayer with the use of AlN/GaN strained periodic multilayer is demonstrated. On- and off-axis x-ray rocking curve analyses have shown significant improvement in the crystalline qualities with remarkable narrowing in their respective full width at half maximum upon utilizati...
Article
Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the surface morphology of the top m-GaN epi-layer at high...
Conference Paper
Devices grown along semi-polar and non-polar directions have added advantage of suppressing the efficiency droop and the spectral shift under the injection of high currents [1, 2]. For devices with longer wavelengths, the semi-polar growth direction has improved efficiency in the indium incorporation during growth of the InGaN multi quantum well [1...
Patent
(EN) A method for producing a non-polar a-plane gallium nitride (GaN) thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique, the method comprising the steps of: annealing the r-plane sapphire substrate using a hydrogen cleaning process; depositing a GaN nucleation layer in the presence of vapori...
Conference Paper
Devices grown along semi-polar and non-polar directions have added advantage of suppressing the efficiency droop and the spectral shift under the injection of high currents [1, 2]. For devices with longer wavelengths, the semi-polar growth direction has improved efficiency in the indium incorporation during growth of the InGaN multi quantum well [1...
Conference Paper
We report the anisotropic structural of semipolar gallium nitride (11-22) films grown on m-plane (10-10) sapphire substrate using different nucleation layer, namely aluminum nitride and gallium nitride. The growth was accomplished by metal organic chemical vapor deposition using three-step approach. Accordingly this approach improved the crystal an...
Conference Paper
In recent years, the optimization and development of GaN on various substrates have gained the attraction in V/III semiconductor research. Despite of the huge difference in the thermal and the lattice mismatches [1], c-plane sapphire (0001) has been most widely utilized to grow GaN. So far, the focus on c-plane GaN has achieved its significant cont...
Poster
Optimization of Semipolar (11-22) GaN nucleation and buffer layer grown on m-plane sapphire substrate via MOCVD

Network

Cited By