Nikolaos Vasileiadis

Democritus University of Thrace | DUTH · Department of Electrical and Computer Engineering

Chimera states have attracted significant research interest due to their potential in modeling brain network functionality. Memristive nano-crossbars, known for their energy efficiency, massive parallelism, and synaptic-like properties, serve as a promising coupling medium in brain-inspired applications. The operation of these devices is strongly d...

The elementary jumps in the electron current through conducting filaments of two nanometer-sized virtual memristor structures consisting of a contact of a conductive atomic force microscope probe to the Si 3 N 4 layer with the thickness of 6[Formula: see text]nm deposited onto the [Formula: see text]-Si(001) conductive substrates are investigated....

Si 3 N 4 -based ReRAM devices showcase intriguing performance characteristics of low switching threshold, high endurance and retention that lay the foundations for the development of the next-generation low-power artificial synaptic devices. In this work, an approach to accurately simulate resistive-switching of Si 3 N 4 memristors by employing the...

The enticing properties of memristors have been exploited for the design of novel circuits with great prospects, owing to the visible challenges posed by CMOS technology. Similarly, research efforts in the field of RF engineering over the last few years have focused on replacing MEMS with memristive switches. These switches have been recently inves...

Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their limitations in case where unstable RTN signals occur. These instabilities are a common issue in Multi-Level Cell...

Inspired by the behavior of natural systems, Cellular Automata (CA) tackle the demanding long-distance information transfer of conventional computers by the massive parallel computation performed by a set of locally-coupled dynamical nodes. Although CA are envisioned as powerful deterministic computers, their intrinsic capabilities are expanded aft...

The results of experimental investigation of the relationship between low-frequency noise spectrum in an electric current through conducting filaments in Si3N4 films with thickness of 6 nm on n++-Si(001) conducting substrates and degradation characteristics of these films are reported. Two structures are investigated: (SN6) Si3N4/SiO2/Si, with 2 nm...

Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is present...

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usually memristive properties with many discrete resistance levels and implement artificial synapses. The...

State-of-the-art IoT technologies request novel design solutions in edge computing, resulting in even more portable and energy-efficient hardware for in-the-field processing tasks. Vision sensors, processors, and hardware accelerators are among the most demanding IoT applications. Resistance switching (RS) two-terminal devices are suitable for resi...

Resistive memories are promising candidates for replacing current nonvolatile memories and realize storage class memories. Moreover, they have memristive properties, with many discrete resistance levels and implement artificial synapses. The last years researcher have demonstrated RRAM chips used as accelerators in computing, following the new in-m...

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usually memristive properties with many discrete resistance levels and implement artificial synapses. The...

There is a growing interest in quantum computers and quantum algorithm development. It has been proved that ideal quantum computers, with zero error rates and large decoherence times, can solve problems that are intractable for today’s classical computers. Quantum computers use two resources, superposition and entanglement, that have no classical a...

Research progress in neuromorphic hardware, capable of biological perception and cognitive information processing, is leading the way towards a revolution in computing technology. Current research efforts have focused mainly on resistive switching devices, the electronic analog of synapses in artificial neural networks (ANNs), and the crossbar nano...

The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multilevel programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation...

This brief contributes to the design of computational and reconfigurable structures which exploit the unique threshold-dependent switching response of single memristors and their compositions. A new logic circuit design paradigm, which assumes parallel processing of input signals, is proposed, along with a methodology for the construction of robust...