
Neslihan Ayarcı KuruoğluYıldız Technical University · Department of Physics
Neslihan Ayarcı Kuruoğlu
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13
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51
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February 2011 - present
Publications
Publications (13)
Within a p-i-n LED structure, energy band gaps of MOCVD grown %10 In content InGaN and GaN layers were obtained through traditional UV–Visible transmission-absorption measurements and utilizing surface photovoltage (SPV) and spectral photoconductivity (SPC) measurements. Moreover, all applied techniques determined that the total band offset between...
InGaN/GaN multiple quantum well-based light-emitting diode LEDs were investigated over a wide range of injection currents (0.04 mA–0.1 A) and temperature (80–370 K)-dependent electroluminescence EL measurements. Two centers were identified for blue luminescence peaking at 2.9 eV and 3.0 eV, denoted as BL2 and BLC\documentclass[12pt]{minimal} \usepa...
Bu çalışmada, metal organik buhar fazlı epitaksi ile üretilmiş GaN p-i-n yapı, elektrolüminesans (EL) ve sıcaklığa akım-gerilim ölçümleriyle incelenmiştir. GaN p-i-n yapının, düz besleme geriliminde uzay yükü sınırlamalı bölgeye karşılık gelen 50 mA enjeksiyon akımı altında, tepe noktası 2.2 eV enerjisinde olan sarı ışık yaydığı gözlenmiştir. Ayrıc...
DC and AC electrical characteristics of an InGaN/GaN multi-quantum well light emitting diode based on PIN structures were investigated through temperature-dependent current– voltage (I-V-T) and admittance-temperature-frequency (Y-T-¬) measurements within 80–375 K temperature interval. Multi-step tunneling was discerned as a carrier conduction mecha...
Investigation of structural quality (by x-ray diffraction) and analysis of defects and interfaces in epitaxial layers (by transmission electron microscopy (TEM)) have been performed on InGaN/GaN multiple quantum wells (MQWs) LED structure. Using energy dispersive x-ray analysis attached to the TEM system, 30% indium content in the InGaN well was me...
The electrical response of gallium nitride (GaN), produced through metal-organic chemical vapor deposition in a p-i-n structure was investigated through temperature-dependent current-voltage (I-V) and admittance measurement. The I-V curves showed double diode behavior together with several distinct regions in which trap-assisted tunnelling current...
Gallium nitride in a p-i-n structure grown by metal-organic vapour phase epitaxy was exposed to nickel-63 beta particle radiation to understand the betavoltaic properties. The effect of the radiation was monitored by performing current density-voltage measurements in conjunction with capacitance-voltage measurements. Interestingly, a betavoltaic ef...
The properties of InP/InGaAsP/InAs/InP laser structure, mainly used in the fiber optic telecommunication industry, were investigated through current density-voltage- temperature (J-V-T) measurement within dark and light conditions. Tunneling and generation-recombination carrier conduction mechanisms were identified within a junction bias voltage of...