Musa El Hasan

Musa El Hasan
An-Najah National University · Department of Physics

PhD

About

16
Publications
3,929
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91
Citations
Additional affiliations
May 1980 - June 2013
An-Najah National University
Position
  • Professor (Assistant)
Description
  • Solid state physics for both graduate 422551 and under graduate 2237 22471 . Solid state electronics (minor electronics) . Solid state electronics for electrical Engineering General physics. Thermodynamics (22241) , Wave and optics, Modern physics

Publications

Publications (16)
Article
Full-text available
Abstract The study population consisted of 237 children aged 5-6 years in Jenin city. The arterial blood pressure (systolic and diastolic), heart pulse rate, oxygen saturation in blood and tympanic temperature were measured before and after exposure to light intensity levels for four hours continuously. The light intensity levels were (0 - 60), (40...
Article
Full-text available
Abstract The study population consisted of 237 children aged 5-6 years in Jenin city. The arterial blood pressure (systolic and diastolic), heart pulse rate, oxygen saturation in blood and tympanic temperature were measured before and after exposure to light intensity levels for four hours continuously. The light intensity levels were (0 - 60), (40...
Article
The effect of infrared laser of wavelength (λ=1064 nm), pulse energy of 40 mJ/pulse at a repetition rate of 10 Hz, on the activation energy of CR-39 polymer, solid state nuclear track detector, has been investigated. Fifteen detectors were divided into three sets of equal numbers. The first set (un-exposed to laser beam), used as a reference set, w...
Article
Three terminators have been tested, square root terminator, quadreture terminator and linear terminator, it was found that the linear terminator is the best, so it was used in calculating local density of states (LDOS) and it's orbital decomposition, alloy average density of states, and energy gap for different anion concentrations for InP lattice...
Article
The structural properties of scandium nitride compound (ScN) in the rocksalt phase (RS) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method within the local density (LDA), Predew–Burke–Ernzerhof (PBE-GGA), Wu–Cohen (WC-GGA), and Engel–Vosko (EV-GGA) approximations. The influence of electron correlation has...
Article
A fast and simple method for the determination of the efficiency coefficient (η) of bare CR-39 detector is presented and discussed. The efficiency coefficient of bare CR-39 detector is then calculated by different ways and the obtained values are found to be comparable to each other. The average value of η of bare CR-39 is found to be 0.20 ± 0.01 t...
Article
The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the pr...
Article
CR-39 detectors and Kodalpha film type (LR115) were compared in terms of radon radiation concentration. Thirteen CR-39 detectors with the same number of Kodalpha film type (LR115) were used in this study. The correlation factor between the radon concentrations, obtained by the two groups of detectors was found to be 0.99. Detector time efficiency (...
Article
The electronic structure of Ga x In 1-x As y P 1-y quaternary alloy, calculated by recursion method is reported. A five orbitals sp ³ s * per atom model was used in the tight-binding representation of the Hamiltonian. The local density of states and its orbital decomposition (LDOS), integrated density of states (IDOS) and structural energy (STE) we...
Article
This work reports the electronic structure of GaInAsSb quaternary alloy by recursion method. A five-orbital sp3s* per atom model was used in the tight-binding representation of the Hamiltonian. The local density of states (LDOS), integrated density of states (IDOS) and structural energy (ST.E) were calculated for Ga, In, As and Sb sites in Ga0.5 In...
Article
The electronic structure calculation of GaAs sub 1-x P sub x and GaSb sub 1-x P sub x alloys using the recursion method is reported. A five orbitals, sp sup 3 s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states are calculated for Ga, As, Sb and P-sites, in a cluster of 216 atoms, the result...
Article
Summary The electronic structure calculation of In1−x Ga x P alloy using the recursion method is reported. A five-orbitals,sp 3 s *, per atom model is used in the tight-binding representation of the Hamiltonian. The local densities of states are calculated for In, Ga and P sites in a cluster of 216 atoms. The results are in reasonably good agreemen...
Article
The electronic structure calculation of solid NaSn using the recursion method is reported. The crystalline structure is assumed to be CsCl. The Fermi level is found to intersect the broad Sn p-band complex.

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