Muhammad Bilal Khan

Muhammad Bilal Khan
Helmholtz-Zentrum Dresden-Rossendorf | HZDR · Institute of Ion Beam Physics and Materials Research

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4
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33
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Publications

Publications (4)
Article
Full-text available
Innovative material and processing concepts are needed to further enhance the performance of complementary metal-oxide-semiconductor (CMOS) transistors-based circuits as the scaling limits are being reached. To supplement that, we report on the development of an atomic layer etching (ALE) process to fabricate small and smooth nanowires using a conv...

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